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零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
IRFD9110	文件：218.22 Kbytes Page：6 Pages	1-WATTRATEDPOWERMOSFETs HEXFETtechnologyisthekeytoInternationalRectififersadvancedlineofpowerMOSFETtransistors. ■P-ChannelVersatility ■ForAutomaticInsertion ■CompactPlasticPackage ■EndStackable ■FastSwitching ■LowDriveCurrent ■EasilyParalleled ■ExcellentTemperatureStability	IRF International Rectifier	IRF
IRFD9110	文件：342.88 Kbytes Page：6 Pages	-0.6Aand-0.7A,-80Vand-100V,1.2and1.6Ohm,P-ChannelPowerMOSFETs Description TheseareP-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation. Features ?-0.6Aand-07A,-80Vand-100V ?rDS(ON)=	HARRIS Harris Corporation	HARRIS
IRFD9110	文件：93.95 Kbytes Page：7 Pages	0.7A,100V,1.200Ohm,P-ChannelPowerMOSFET ThisP-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
IRFD9110	文件：54.38 Kbytes Page：6 Pages	0.7A,100V,1.200Ohm,P-ChannelPowerMOSFET ThisP-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching	Intersil Intersil Corporation	Intersil
IRFD9110	文件：173.36 Kbytes Page：6 Pages	PowerMOSFET(Vdss=-100V,Rds(on)=1.2ohm,Id=-0.70A) HEXFETtechnologyisthekeytoInternationalRectififersadvancedlineofpowerMOSFETtransistors. ■P-ChannelVersatility ■ForAutomaticInsertion ■CompactPlasticPackage ■EndStackable ■FastSwitching ■LowDriveCurrent ■EasilyParalleled ■ExcellentTemperatureStability	IRF International Rectifier	IRF
IRFD9110	文件：1.52087 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecombinat	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFD9110	文件：1.64972 Mbytes Page：9 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFD9110	文件：825.31 Kbytes Page：9 Pages	PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Forautomaticinsertion ?Endstackable ?P-channel ?Fastswitching ?175°Coperatingtemperature ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgeneration	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFD9110PBF	文件：1.79065 Mbytes Page：8 Pages	HEXFETPOWERMOSFET(VDSS=-100V,RDS(on)=1.2廓,ID=-0.70A)	IRF International Rectifier	IRF
IRFD9110PBF	文件：1.52087 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecombinat	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFD9110PBF	文件：825.31 Kbytes Page：9 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFE9110	文件：124.1 Kbytes Page：7 Pages	REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORSSURFACEMOUNT(LCC-18) REPETITIVEAVALANCHEANDdv/dtRATED HEXFET?TRANSISTORSSURFACEMOUNT(LCC-18) Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesignersth	IRF International Rectifier	IRF
IRFE9110	文件：124.1 Kbytes Page：7 Pages	REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORSSURFACEMOUNT(LCC-18)	IRF International Rectifier	IRF
IRFE9110	文件：19.18 Kbytes Page：2 Pages	P-CHANNELPOWERMOSFET	SEME-LAB Seme LAB	SEME-LAB
IRFE9110	文件：125.22 Kbytes Page：7 Pages	SimpleDriveRequirements	IRF International Rectifier	IRF
IRFF9110	文件：143.61 Kbytes Page：7 Pages	HEXFETTRANSISTORSTHRU-HOLE(TO-205AF) TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance. TheHEXFETtransistorsalso	IRF International Rectifier	IRF
IRFF9110	文件：16.67 Kbytes Page：1 Pages	P-ChannelMOSFETinaHermeticallysealedTO39	SEME-LAB Seme LAB	SEME-LAB
IRFF9110	文件：136.14 Kbytes Page：7 Pages	SimpleDriveRequirements	IRF International Rectifier	IRF
IRFF9110	文件：656.29 Kbytes Page：2 Pages	100V,P-CHANNEL	NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司	NJSEMI
IRFG9110	文件：218.24 Kbytes Page：7 Pages	POWERMOSFETTHRU-HOLE(MO-036AB)	IRF International Rectifier	IRF

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詳細(xì)參數(shù)

型號：
IRFC9110
制造商：
Vishay Semiconductors
功能描述：
MOSFET P-CHANNEL 100V - Tape and Reel

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價(jià)格
深圳市河鋒鑫科技有限公司	IRFC9110R	IR	22+		6000	終端可免費(fèi)供樣,支持BOM配單	詢價(jià)
深圳市安富世紀(jì)電子有限公司	IRFC9110R	IR	23+		8000	只做原裝現(xiàn)貨	詢價(jià)
天津市博通航睿技術(shù)有限公司	IRFC9110R	IR	23+		7000		詢價(jià)
深圳市振宏微科技有限公司	IRFC9130	IR	23+	SMD	9888	專做原裝正品,假一罰百!	詢價(jià)
深圳市威雅利發(fā)展有限公司	IRFC9140	IR	1244+	裸片	1066	一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力	詢價(jià)
深圳市宏興瑞科技有限公司	IRFC9140	IR	23+	裸片	10000	原裝正品現(xiàn)貨	詢價(jià)

更多IRFC9110供應(yīng)商更新時(shí)間2025-1-3 14:00:00

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