零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
REPETITIVEAVALANCHERATEDANDdv/dtRATED REPETITIVEAVALANCHERATEDANDdv/dtRATEDHEXFETTRNANSISTOR 100Volt,0.07OhmHEXFET | IRF International Rectifier | IRF | ||
N-CHANNELPOWERMOSFET | SEME-LAB Seme LAB | SEME-LAB | ||
SimpleDriveRequirements | IRF International Rectifier | IRF | ||
POWERMOSFETN-CHANNEL(BVdss=100V,Rds(on)=0.060ohm,Id=34A) RDS(on)0.07? ID34A HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-establis | IRF International Rectifier | IRF | ||
SimpleDriveRequirements | IRF International Rectifier | IRF | ||
N-CHANNELPOWERMOSFET | SEME-LAB Seme LAB | SEME-LAB | ||
AdvancedPowerMOSFET FEATURES AvalancheRuggedTechnology RuggedGateOxideTechnology LowerInputCapacitance ImprovedGateCharge ExtendedSafeOperatingArea 175OperatingTemperature LowerLeakageCurrent:10A(Max.)@VDS=100V LowerRDS(ON):0.032?(Typ.) | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | ||
PowerMOSFET(Vdss=100V,Rds(on)=0.035W,Id=42A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | IRF | ||
HIGHVOLTAGEPOWERMOSFETDIE FEATURES: ●Fastswitchingtimes ●LOWRDS(on)HDMOS?process ●Ruggedpolyslllcongatecellstructure ●Excellenthighvoltagestability ●Lowinputcapacitance ●Improvedhightemperaturereliability APPLICATIONS ●Switchingpowersupplies ●Motorcontrols ●AudioAmplifiers ●Inver | IXYS IXYS Corporation | IXYS | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247ACpackageispreferredforcommercial-industrialapplicationswherehigherpowerlevelspreclude | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
SEMICONDUCTORS | etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商 | etc2 | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Isolatedcentralmountinghole ?175°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Not | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
AdvancedPowerMOSFET FEATURES AvalancheRuggedTechnology RuggedGateOxideTechnology LowerInputCapacitance ImprovedGateCharge ExtendedSafeOperatingArea 175OperatingTemperature LowerLeakageCurrent:10A(Max.)@VDS=100V LowerRDS(ON):0.032?(Typ.) | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | ||
N-ChannelMOSFETTransistor | TGS Tiger Electronic Co.,Ltd | TGS | ||
100V,60AHeatsinkN-ChannelTypePowerMOSFET | THINKISEMIThinki Semiconductor Co., Ltd. 思祁半導體思祁半導體有限公司 | THINKISEMI | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC |
詳細參數
- 型號:
IRFC150R
- 功能描述:
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | CHIP
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IR |
22+ |
- |
6000 |
終端可免費供樣,支持BOM配單 |
詢價 | ||
IR |
23+ |
- |
8000 |
只做原裝現(xiàn)貨 |
詢價 | ||
IR |
23+ |
- |
7000 |
詢價 | |||
IR |
23+ |
SMD |
12500 |
全新原裝現(xiàn)貨熱賣,價格優(yōu)勢 |
詢價 | ||
VISHAY/威世 |
23+ |
STAND |
12116 |
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
IRF |
23+ |
NA |
19960 |
只做進口原裝,終端工廠免費送樣 |
詢價 | ||
IR |
24+ |
35200 |
一級代理/放心采購 |
詢價 | |||
IR |
1923+ |
裸片 |
2000 |
公司原裝現(xiàn)貨特價處理 |
詢價 |
相關規(guī)格書
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