| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
N-CHANNELPOWERMOSFET | SEME-LAB Seme LAB | SEME-LAB | ||
POWERMOSFETTHRU-HOLE(TO-254AA) PartNumberRDS(on)ID IRFM2500.100?27.4A HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductan | IRF International Rectifier | IRF | ||
N??HANNELPOWERMOSFET | SEME-LAB Seme LAB | SEME-LAB | ||
SimpleDriveRequirements | IRF International Rectifier | IRF | ||
POWERMOSFETTHRU-HOLE(TO-254AA) | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
N–CHANNELPOWERMOSFET VDSS200V ID(cont)27.4A RDS(on)0.100? FEATURES ?N–CHANNELMOSFET ?HIGHVOLTAGE ?INTEGRALPROTECTIONDIODE ?HERMETICISOLATEDTO-254PACKAGE ?CERAMICSURFACEMOUNTPACKAGE OPTION | SEME-LAB Seme LAB | SEME-LAB | ||
POWERMOSFETN-CHANNEL(BVdss=200V,Rds(on)=0.100ohm,Id=27.4A) RDS(on)0.100? ID27.4A HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-estab | IRF International Rectifier | IRF | ||
N??HANNELPOWERMOSFET FEATURES ?HERMETICALLYSEALEDSURFACEMOUNTPACKAGE ?SMALLFOOTPRINT–EFFICIENTUSEOFPCBSPACE. ?SIMPLEDRIVEREQUIREMENTS ?LIGHTWEIGHT ?HIGHPACKINGDENSITIES | SEME-LAB Seme LAB | SEME-LAB | ||
SimpleDriveRequirements | IRF International Rectifier | IRF | ||
N-CHANNELPOWERMOSFET | SEME-LAB Seme LAB | SEME-LAB | ||
N-CHANNEL200V-0.073ohm-33ATO-247PowerMeshIIMOSFET DESCRIPTION ThePowerMESH?IIistheevolutionofthefirstgenerationofMESHOVERLAY?.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gatechargeandruggedness. ■TYPICALRDS(on)=0. | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
N-ChannelPowerMosfets
| SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
200VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary, planar,DMOStechnology. Features ?32A,200V,RDS(on)=0.085?@VGS=10V ?Lowgatecharge(typical95nC) ?LowCrss(typical75pF) ?Fastswitching ?100ava | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
N-Channel(HexfetTransistors)
| IRF International Rectifier | IRF | ||
PowerMOSFET(Vdss=200V,Rds(on)=0.075ohm,Id=30A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | IRF | ||
StandardPowerMOSFET N-ChannelEnhancementMode Features ?InternationalstandardpackageJEDECTO-247AD ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Highcommutatingdv/dtrating ?Fastswitchingtimes Applications ?Switch-modeandresonant-modepowersupplies ?Motorcontrols | IXYS IXYS Corporation | IXYS | ||
HighVoltagePowerMOSFETDieN-ChannelEnhancementModeHighRuggednessSeries FEATURES: ?Fastswitchingtimes ?LowRDS(on)HDMOS?process ?Ruggedpolysilicongatecellstructure ?Excellenthighvoltagestability ?Lowinputcapacitance ?Improvedhightemperaturereliability APPLICATIONS: ?Switchingpowersupplies ?Motorcontrols ?AudioAmplifiers ?Invert | IXYS IXYS Corporation | IXYS | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheTO-220packageisuniversiallypreferredforcommercial-industrialapplicationswherehigherpowerleve | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
iscN-ChannelMOSFETTransistor DESCRIPTION ·Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES ·DrainCurrent–ID=33A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.085Ω(Max) ·FastSwitching | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC |
詳細(xì)參數(shù)
- 型號：
IRFC250B
- 制造商：
Vishay Semiconductors
- 功能描述：
MOSFET N-CHANNEL 200V - Bulk
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
2016+ |
Thewafer |
6528 |
房間原裝進(jìn)口現(xiàn)貨假一賠十 |
詢價 | ||
IR |
22+ |
Thewafer |
8900 |
英瑞芯只做原裝正品!!! |
詢價 | ||
IR |
22+ |
Thewafer |
6000 |
終端可免費(fèi)供樣,支持BOM配單 |
詢價 | ||
IR |
23+ |
Thewafer |
8000 |
只做原裝現(xiàn)貨 |
詢價 | ||
IR |
23+ |
Thewafer |
7000 |
詢價 | |||
INFINEON |
1503+ |
SMD |
3000 |
就找我吧!--邀您體驗(yàn)愉快問購元件! |
詢價 | ||
Infineon |
22+ |
NA |
2118 |
加我QQ或微信咨詢更多詳細(xì)信息, |
詢價 | ||
Infineon Technologies |
21+ |
13880 |
公司只售原裝,支持實(shí)單 |
詢價 | |||
Infineon Technologies |
23+ |
9000 |
原裝正品，支持實(shí)單 |
詢價 | |||
Infineon Technologies |
24+ |
原裝 |
5000 |
原裝正品,提供BOM配單服務(wù) |
詢價 |
相關(guān)規(guī)格書
更多- IRFC264B
- IRFC2N65AB
- IRFC320B
- IRFC330R
- IRFC350
- IRFC350R
- IRFC360R
- IRFC38N60LB
- IRFC4127EB
- IRFC420AB
- IRFC450B
- IRFC450R
- IRFC460B WAF
- IRFC4N65AB
- IRFC840B
- IRFC9014R
- IRFC9034B
- IRFC9110
- IRFC9110R
- IRFC9130
- IRFC9140
- IRFC9220B
- IRFD010
- IRFD012
- IRFD014_10
- IRFD015
- IRFD020PBF
- IRFD024
- IRFD024PBF
- IRFD110PBF
- IRFD110U
- IRFD111R
- IRFD112R
- IRFD113PBF
- IRFD120PBF
- IRFD121
- IRFD123
- IRFD1Z0
- IRFD1Z2
- IRFD210
- IRFD210R
- IRFD211R
- IRFD212R
- IRFD213R
- IRFD214PBF
相關(guān)庫存
更多- IRFC2907B
- IRFC310R
- IRFC320R
- IRFC340R
- IRFC350B
- IRFC360B
- IRFC37N50AB
- IRFC40N50LB
- IRFC4127ED
- IRFC450
- IRFC450BV
- IRFC460AB
- IRFC460R
- IRFC830B
- IRFC9014B
- IRFC9024B
- IRFC9034R
- IRFC9110B
- IRFC9120B
- IRFC9130B
- IRFC9140B
- IRFC9240
- IRFD010PBF
- IRFD014
- IRFD014PBF
- IRFD020
- IRFD022
- IRFD024_10
- IRFD110
- IRFD110R
- IRFD111
- IRFD112
- IRFD113
- IRFD120
- IRFD120S2497
- IRFD122
- IRFD123PBF
- IRFD1Z1
- IRFD1Z3
- IRFD210PBF
- IRFD211
- IRFD212
- IRFD213
- IRFD214
- IRFD220
