| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
HEXFETTRANSISTOR 100Volt,0.077OhmHEXFET TheHEXFET?technologyisthekeytointernationalRectifiersadvancelineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance. FEATURES: ■RepetitiveAvalancheRating ■IsolatedandHer | IRF International Rectifier | IRF | ||
N-CHANNELPOWERMOSFET | SEME-LAB Seme LAB | SEME-LAB | ||
SimpleDriveRequirements | IRF International Rectifier | IRF | ||
POWERMOSFETN-CHANNEL(BVdss=100V,Rds(on)=0.077ohm,Id=28A) RDS(on)0.077? ID28A HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-establi | IRF International Rectifier | IRF | ||
SimpleDriveRequirements | IRF International Rectifier | IRF | ||
N-CHANNELPOWERMOSFET | SEME-LAB Seme LAB | SEME-LAB | ||
31A,100V,0.077Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247ACpackageispreferredfor commercial-industrialapplicationswherehigherpowerlevelspreclud | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
iscN-ChannelMOSFETTransistor DESCRIPTION ?Designedforapplicationsuchasswitchingregulators,switchingconvertors,motordriversandsoon. FEATURES ?DrainCurrent–ID=31A@TC=25℃ ?DrainSourceVoltage- :VDSS=100V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.077Ω(Max) ?SOAispowerdissipati | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Isolatedcentralmountinghole ?175°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Not | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
AdvancedPowerMOSFET FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■175°COperatingTemperature ■LowerLeakageCurrent:10μA(Max.)@VDS=100V ■LowerRDS(ON):0.041Ω(Typ.) | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
PowerMOSFET(Vdss=100V,Rds(on)=0,052ohm,Id=33A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | IRF International Rectifier | IRF | ||
33A,100V,0.040Ohm,N-ChannelPowerMOSFET Features ?UltraLowOn-Resistance -rDS(ON)=0.040?,VGS=10V ?SimulationModels -TemperatureCompensatedPSPICE?andSABER?ElectricalModels -SpiceandSABER?ThermalImpedanceModels -www.intersil.com ?PeakCurrentvsPulseWidthCurve ?UISRatingCurve | Intersil Intersil Corporation | Intersil | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | IRF International Rectifier | IRF | ||
ADVANCEDPROCESSTECHNOLOGY | IRF International Rectifier | IRF | ||
N-Channel100-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司 | VBSEMI |
詳細參數(shù)
- 型號：
IRFC140B
- 制造商：
Vishay Semiconductors
- 功能描述：
MOSFET N-CHANNEL 100V - Bulk
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
22+ |
6000 |
終端可免費供樣,支持BOM配單 |
詢價 | |||
IR |
23+ |
8000 |
只做原裝現(xiàn)貨 |
詢價 | |||
IR |
23+ |
7000 |
詢價 | ||||
INFINEON/英飛凌 |
23+ |
15510 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | |||
IXYS |
23+ |
NA |
19960 |
只做進口原裝,終端工廠免費送樣 |
詢價 | ||
IR |
23+ |
SMD |
12500 |
全新原裝現(xiàn)貨熱賣,價格優(yōu)勢 |
詢價 |
相關(guān)規(guī)格書
更多- IRFC150
- IRFC17N50LB
- IRFC1N60AB
- IRFC20N50AB
- IRFC210BV
- IRFC214B
- IRFC220BV
- IRFC22N50AC
- IRFC240
- IRFC240BV
- IRFC250B
- IRFC2907B
- IRFC310R
- IRFC320R
- IRFC340R
- IRFC350B
- IRFC360B
- IRFC37N50AB
- IRFC40N50LB
- IRFC4127ED
- IRFC450
- IRFC450BV
- IRFC460AB
- IRFC460R
- IRFC830B
- IRFC9014B
- IRFC9024B
- IRFC9034R
- IRFC9110B
- IRFC9120B
- IRFC9130B
- IRFC9140B
- IRFC9240
- IRFD010PBF
- IRFD014
- IRFD014PBF
- IRFD020
- IRFD022
- IRFD024_10
- IRFD110
- IRFD110R
- IRFD111
- IRFD112
- IRFD113
- IRFD120
相關(guān)庫存
更多- IRFC150R
- IRFC18N50KF
- IRFC1Z0R
- IRFC210B
- IRFC210R
- IRFC220B
- IRFC22N50AB
- IRFC234
- IRFC240B
- IRFC250
- IRFC264B
- IRFC2N65AB
- IRFC320B
- IRFC330R
- IRFC350
- IRFC350R
- IRFC360R
- IRFC38N60LB
- IRFC4127EB
- IRFC420AB
- IRFC450B
- IRFC450R
- IRFC460B WAF
- IRFC4N65AB
- IRFC840B
- IRFC9014R
- IRFC9034B
- IRFC9110
- IRFC9110R
- IRFC9130
- IRFC9140
- IRFC9220B
- IRFD010
- IRFD012
- IRFD014_10
- IRFD015
- IRFD020PBF
- IRFD024
- IRFD024PBF
- IRFD110PBF
- IRFD110U
- IRFD111R
- IRFD112R
- IRFD113PBF
- IRFD120PBF
