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IRFP22N50A

iscN-ChannelMOSFETTransistor

?DESCRITION ?SwitchingVoltageRegulators ?FEATURES ?Lowdrain-sourceon-resistance: RDS(ON)=0.23?(MAX) ?Enhancementmode: Vth=2.0to4.0V(VDS=10V,ID=0.25mA) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFP22N50A

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRFP22N50A

PowerMOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?Lead(Pb)-freeAvailable APPLICATIONS ?SwitchModePowerSupply(SMPS) ?UninterruptablePowerS

VishayVishay Siliconix

威世科技威世科技半導體

IRFP22N50A

PowerMOSFET(Vdss=500V,Rds(on)max=0.23ohm,Id=22A)

Applications SwitchModePowerSupply(SMPS) UninterruptIblePowerSupply HighSpeedPowerSwitching Benefits LowGateChargeQgresultsinSimpleDriveRequirement ImprovedGate,AvalancheandDynamicdv/dtRuggedness FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent

IRF

International Rectifier

IRFP22N50A

PowerMOSFET

FEATURES ?LowgatechargeQgresultsinsimpledrive requirement ?Improvedgate,avalancheanddynamicdV/dt ruggedness ?Fullycharacterizedcapacitanceandavalanchevoltage andcurrent ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note

VishayVishay Siliconix

威世科技威世科技半導體

IRFP22N50A

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRFP22N50APBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRFP22N50APBF

HEXFETPowerMOSFET(VDSS=500V,RDS(on)max=0.23廓,ID=22A)

Applications SwitchModePowerSupply(SMPS) UninterruptIblePowerSupply HighSpeedPowerSwitching Lead-Free Benefits LowGateChargeQgresultsinSimpleDriveRequirement ImprovedGate,AvalancheandDynamicdv/dtRuggedness FullyCharacterizedCapacitanceandAvalancheVoltageandCur

IRF

International Rectifier

IRP22N50A

PowerMOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?Lead(Pb)-freeAvailable APPLICATIONS ?SwitchModePowerSupply(SMPS) ?UninterruptablePowerS

VishayVishay Siliconix

威世科技威世科技半導體

IRP22N50APBF

PowerMOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?Lead(Pb)-freeAvailable APPLICATIONS ?SwitchModePowerSupply(SMPS) ?UninterruptablePowerS

VishayVishay Siliconix

威世科技威世科技半導體

IXFH22N50P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=22A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.27Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFH22N50P

PolarPowerMOSFETHiPerFET

Polar?PowerMOSFETHiPerFET? N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode Features ?InternationalStandardPackages ?AvalancheRated ?FastIntrinsicDiode ?LowPackageInductance Advantages ?HighPowerDensity ?EasytoMount ?SpaceSavings Applications ?Swit

IXYS

IXYS Corporation

IXFV22N50P

PolarPowerMOSFETHiPerFET

Polar?PowerMOSFETHiPerFET? N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode Features ?InternationalStandardPackages ?AvalancheRated ?FastIntrinsicDiode ?LowPackageInductance Advantages ?HighPowerDensity ?EasytoMount ?SpaceSavings Applications ?Swit

IXYS

IXYS Corporation

IXFV22N50PS

PolarPowerMOSFETHiPerFET

Polar?PowerMOSFETHiPerFET? N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode Features ?InternationalStandardPackages ?AvalancheRated ?FastIntrinsicDiode ?LowPackageInductance Advantages ?HighPowerDensity ?EasytoMount ?SpaceSavings Applications ?Swit

IXYS

IXYS Corporation

IXGH22N50B

HiPerFASTIGBT

VCES=500V IC(25)=44A VCE(sat)typ=2.1V tfi(typ)=55ns Features ?InternationalstandardpackagesJEDECTO-247SMDsurfacemountableandJEDECTO-247AD ?HighfrequencyIGBT ?Highcurrenthandlingcapability ?HiPerFASTTMHDMOSTMprocess ?MOSGateturn-on

IXYS

IXYS Corporation

IXGH22N50BS

HiPerFASTIGBT

VCES=500V IC(25)=44A VCE(sat)typ=2.1V tfi(typ)=55ns Features ?InternationalstandardpackagesJEDECTO-247SMDsurfacemountableandJEDECTO-247AD ?HighfrequencyIGBT ?Highcurrenthandlingcapability ?HiPerFASTTMHDMOSTMprocess ?MOSGateturn-on

IXYS

IXYS Corporation

IXTH22N50P

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXTH22N50P

N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode

N-ChannelEnhancementModeAvalancheRated Features Internationalstandardpackages UnclampedInductiveSwitching(UIS)rated Lowpackageinductance -easytodriveandtoprotect Advantages Easytomount Spacesavings Highpowerdensity

IXYS

IXYS Corporation

IXTQ22N50P

N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode

N-ChannelEnhancementModeAvalancheRated Features Internationalstandardpackages UnclampedInductiveSwitching(UIS)rated Lowpackageinductance -easytodriveandtoprotect Advantages Easytomount Spacesavings Highpowerdensity

IXYS

IXYS Corporation

IXTQ22N50P

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

詳細參數(shù)

  • 型號:

    IRFC22N50AB

  • 制造商:

    Vishay Semiconductors

  • 功能描述:

    MOSFET N-CHANNEL 500V - Bulk

供應商型號品牌批號封裝庫存備注價格
IR
23+
SMD
12500
全新原裝現(xiàn)貨熱賣,價格優(yōu)勢
詢價
IR
22+
SMD
6000
終端可免費供樣,支持BOM配單
詢價
IR
23+
SMD
8000
只做原裝現(xiàn)貨
詢價
IR
23+
SMD
7000
詢價
VISHAY/威世
23+
STAND
12116
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
詢價
IRF
23+
NA
19960
只做進口原裝,終端工廠免費送樣
詢價
IR
21+
35200
一級代理/放心采購
詢價
IR
1923+
裸片
2000
公司原裝現(xiàn)貨特價處理
詢價
IR
2016+
Thewafer
6528
房間原裝進口現(xiàn)貨假一賠十
詢價
IR
22+
Thewafer
8900
英瑞芯只做原裝正品!!!
詢價
更多IRFC22N50AB供應商 更新時間2024-11-6 15:49:00