IRFD113中文資料威世科技數(shù)據(jù)手冊PDF規(guī)格書
IRFD113規(guī)格書詳情
FEATURES
? For automatic insertion
? Compact plastic package
? End stackable
? Fast switching
? Low drive current
? Easily paralleled
? Excellent temperature stability
? Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The HVMDIP technology is the key to Vishay’s advanced
line of power MOSFET transistors. The efficient geometry
and unique processing of the HVMDIP design achieves
very low on-state resistance combined with high
transconductance and extreme device ruggedness.
HVMDIPs feature all of the established advantages of
MOSFETs such as voltage control, very fast switching, ease
of paralleling, and temperature stability of the electrical
parameters.
The HVMDIP 4 pin, dual-in-line package brings the
advantages of HVMDIPs to high volume applications where
automatic PC board insertion is desireable, such as circuit
boards for computers, printers, telecommunications
equipment, and consumer products. Their compatibility with
automatic insertion equipment, low-profile and end
stackable features represent the stat-of-the-art in power
device packaging.
產(chǎn)品屬性
- 型號:
IRFD113
- 功能描述:
MOSFET N-Chan 100V 1.0 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導通):
0.014 Ohms
- 配置:
Single
- 安裝風格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
HARRIS |
24+ |
35200 |
一級代理/放心采購 |
詢價 | |||
VISHAY(威世) |
23+ |
HVMDIP4 |
7350 |
現(xiàn)貨供應,當天可交貨!免費送樣,原廠技術支持!!! |
詢價 | ||
ON |
23+ |
NA |
6500 |
全新原裝假一賠十 |
詢價 | ||
VIS |
2020+ |
DIP |
80000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
VISHAY(威世) |
23+ |
HVMDIP4 |
6000 |
誠信服務,絕對原裝原盤 |
詢價 | ||
IR |
23+ |
DIP-4 |
8238 |
詢價 | |||
GESS |
23+ |
NA |
39960 |
只做進口原裝,終端工廠免費送樣 |
詢價 | ||
IR |
22+ |
DIP-4 |
8000 |
原裝正品支持實單 |
詢價 | ||
IOR |
24+ |
DIP-4 |
100 |
詢價 | |||
MOT |
9207 |
382 |
公司優(yōu)勢庫存 熱賣中! |
詢價 |