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IRFS11N50A

iscN-ChannelMOSFETTransistor

?DESCRITION ?SwitchingVoltageRegulators ?FEATURES ?Lowdrain-sourceon-resistance: RDS(ON)=0.52?(MAX) ?Enhancementmode: Vth=2.0to4.0V(VDS=10V,ID=0.25mA) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFS11N50A

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFS11N50A

SMPSMOSFET

Benefits ?LowGateChargeQgresultsinSimpleDriveRequirement ?ImprovedGate,Avalancheanddynamicdv/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?EffectiveCossSpecified(SeeAN1001) Applications ?SwitchModePowerSupply(SMPS) ?Uninterr

IRF

International Rectifier

IRFS11N50A

PowerMOSFET

FEATURES ?LowGateChargeQgresultsinSimpleDrive ??Requirement ?ImprovedGate,AvalancheandDynamicdV/dt ??Ruggedness ?FullyCharacterizedCapacitanceand ??AvalancheVoltageandCurrent ?EffectiveCossSpecified ?Lead(Pb)-freeAvailable APPLICATIONS ?SwitchModePowerSu

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFS11N50A

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFS11N50APBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFS11N50APBF

HEXFET?PowerMOSFET

IRF

International Rectifier

IRFS11N50APBF

PowerMOSFET

FEATURES ?LowGateChargeQgresultsinSimpleDrive ??Requirement ?ImprovedGate,AvalancheandDynamicdV/dt ??Ruggedness ?FullyCharacterizedCapacitanceand ??AvalancheVoltageandCurrent ?EffectiveCossSpecified ?Lead(Pb)-freeAvailable APPLICATIONS ?SwitchModePowerSu

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFS11N50ATRL

PowerMOSFET

FEATURES ?LowGateChargeQgresultsinSimpleDrive ??Requirement ?ImprovedGate,AvalancheandDynamicdV/dt ??Ruggedness ?FullyCharacterizedCapacitanceand ??AvalancheVoltageandCurrent ?EffectiveCossSpecified ?Lead(Pb)-freeAvailable APPLICATIONS ?SwitchModePowerSu

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFS11N50ATRLPA

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFS11N50ATRLPBF

PowerMOSFET

FEATURES ?LowGateChargeQgresultsinSimpleDrive ??Requirement ?ImprovedGate,AvalancheandDynamicdV/dt ??Ruggedness ?FullyCharacterizedCapacitanceand ??AvalancheVoltageandCurrent ?EffectiveCossSpecified ?Lead(Pb)-freeAvailable APPLICATIONS ?SwitchModePowerSu

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFS11N50ATRRPA

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFS11N50ATRRPBF

PowerMOSFET

FEATURES ?LowGateChargeQgresultsinSimpleDrive ??Requirement ?ImprovedGate,AvalancheandDynamicdV/dt ??Ruggedness ?FullyCharacterizedCapacitanceand ??AvalancheVoltageandCurrent ?EffectiveCossSpecified ?Lead(Pb)-freeAvailable APPLICATIONS ?SwitchModePowerSu

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFSL11N50A

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note? *Thisdatasheetprovidesinformationaboutpartsthatare? R

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFSL11N50A

RepetitiveAvalancheRated

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFSL11N50A

HEXFETPowerMOSFET

IRF

International Rectifier

IRFSL11N50APBF

HEXFETPowerMOSFET

IRF

International Rectifier

IRFY11N50CMA

HEXFETPOWERMOSFETTHRU-HOLE(TO-257AA)

IRF

International Rectifier

IRFY11N50CMA

SimpleDriveRequirements

IRF

International Rectifier

KF11N50F

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES ?VDSS=500V,ID=11A ?Dr

KECKEC CORPORATION

KEC株式會(huì)社

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更多IRFL11N50ATRPBF供應(yīng)商 更新時(shí)間2024-12-29 10:58:00