首頁 >IRFR5505HR>規(guī)格書列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
UltraLowOn-Resistance Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | IRF | ||
ULTRALOWONRESISTANCE | IRF International Rectifier | IRF | ||
ULTRALOWON-RESISTANCE | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
-60VP-ChannelEnhancementModeMOSFET Description Theusesadvancedtrenchtechnology toprovideexcellentRDS(ON),lowgatechargeand operationwithgatevoltagesaslowas4.5V.This deviceissuitableforuseasa BatteryprotectionorinotherSwitchingapplication. GeneralFeatures VDS=-60VID=-10A RDS(ON) | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊歐翊歐半導(dǎo)體 | EVVOSEMI | ||
-60VP-ChannelEnhancementModeMOSFET GeneralFeatures VDS=-60VID=-10A RDS(ON) | UMWGuangdong Youtai Semiconductor Co., Ltd. 友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司 | UMW | ||
ULTRALOWON-RESISTANCE | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
P-Channel60V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
AdvancedprocessTechnolgy | IRF International Rectifier | IRF | ||
PowerMOSFET(Vdss=-55V,Rds(on)=0.11ohm,Id=-18A) | IRF International Rectifier | IRF | ||
PowerMOSFET(Vdss=-55V,Rds(on)=0.11ohm,Id=-18A) | IRF International Rectifier | IRF | ||
UltraLowOn-Resistance VDSS=-55V RDS(on)=0.11? ID=-18A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignth | IRF International Rectifier | IRF | ||
ULTRALOWON-RESISTANCE | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
P-Channel60-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
UltraLowOn-Resistance Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | IRF | ||
UltraFast??7nsResponseTime15GHzRFPowerDetectorwithComparator | LINERLinear Technology 凌力爾特凌特半導(dǎo)體 | LINER | ||
800MHzto2.7GHzHighLinearityDirectConversionQuadratureDemodulator | LINERLinear Technology 凌力爾特凌特半導(dǎo)體 | LINER | ||
UltraFast??7nsResponseTime15GHzRFPowerDetectorwithComparator | LINERLinear Technology 凌力爾特凌特半導(dǎo)體 | LINER | ||
RFFrequencyRange:800MHzto2.7GHz | LINERLinear Technology 凌力爾特凌特半導(dǎo)體 | LINER | ||
800MHzto1.5GHzDirectConversionQuadratureDemodulator | LINERLinear Technology 凌力爾特凌特半導(dǎo)體 | LINER | ||
40MHzto10GHzRMSPowerDetectorwith57dBDynamicRange FEATURES nFrequencyRange:40MHzto10GHz nLinearDynamicRange:Upto57dB nAccurateRMSPowerMeasurementofHighCrest FactorModulatedWaveforms nExceptionalAccuracyOverTemperature:±0.5dB(Typ) nLowLinearityErrorwithinDynamicRange nSingle-EndedorDifferentialRFInputs | ADAnalog Devices 亞德諾亞德諾半導(dǎo)體技術(shù)有限公司 | AD |
詳細(xì)參數(shù)
- 型號(hào):
IRFR5505HR
- 制造商:
International Rectifier
- 功能描述:
Trans MOSFET P-CH 55V 18A 3-Pin(2+Tab) DPAK T/R
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
IR |
22+ |
6000 |
終端可免費(fèi)供樣,支持BOM配單 |
詢價(jià) | |||
IR |
23+ |
8000 |
只做原裝現(xiàn)貨 |
詢價(jià) | |||
IR |
23+ |
7000 |
詢價(jià) | ||||
IR |
23+ |
TO-252 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
IR |
24+ |
TO-252 |
45000 |
原裝現(xiàn)貨假一賠十 |
詢價(jià) | ||
IR |
2022 |
TO-252 |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價(jià) | ||
IR |
24+ |
TO-252 |
33055 |
詢價(jià) | |||
IR |
24+ |
TO-252 |
16800 |
絕對(duì)原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢(shì)!? |
詢價(jià) | ||
IR |
2016+ |
TO-252 |
6528 |
房間原裝進(jìn)口現(xiàn)貨假一賠十 |
詢價(jià) | ||
` |
16+ |
BGA |
1068 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) |
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