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IRFR5505PBF

UltraLowOn-Resistance

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRFR5505PBF

ULTRALOWONRESISTANCE

IRF

International Rectifier

IRFR5505PBF

ULTRALOWON-RESISTANCE

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR5505TR

-60VP-ChannelEnhancementModeMOSFET

Description Theusesadvancedtrenchtechnology toprovideexcellentRDS(ON),lowgatechargeand operationwithgatevoltagesaslowas4.5V.This deviceissuitableforuseasa BatteryprotectionorinotherSwitchingapplication. GeneralFeatures VDS=-60VID=-10A RDS(ON)

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

IRFR5505TR

-60VP-ChannelEnhancementModeMOSFET

GeneralFeatures VDS=-60VID=-10A RDS(ON)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司

IRFR5505TRL

ULTRALOWON-RESISTANCE

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR5505TRPBF

P-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

IRFR5505TRPBF

AdvancedprocessTechnolgy

IRF

International Rectifier

IRFRU5505

PowerMOSFET(Vdss=-55V,Rds(on)=0.11ohm,Id=-18A)

IRF

International Rectifier

IRFU5505

PowerMOSFET(Vdss=-55V,Rds(on)=0.11ohm,Id=-18A)

IRF

International Rectifier

IRFU5505GPBF

UltraLowOn-Resistance

VDSS=-55V RDS(on)=0.11? ID=-18A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignth

IRF

International Rectifier

IRFU5505PBF

ULTRALOWON-RESISTANCE

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU5505PBF

P-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

IRFU5505PBF

UltraLowOn-Resistance

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

LTC5505

UltraFast??7nsResponseTime15GHzRFPowerDetectorwithComparator

LINERLinear Technology

凌力爾特凌特半導(dǎo)體

LTC5505

800MHzto2.7GHzHighLinearityDirectConversionQuadratureDemodulator

LINERLinear Technology

凌力爾特凌特半導(dǎo)體

LTC5505

UltraFast??7nsResponseTime15GHzRFPowerDetectorwithComparator

LINERLinear Technology

凌力爾特凌特半導(dǎo)體

LTC5505

RFFrequencyRange:800MHzto2.7GHz

LINERLinear Technology

凌力爾特凌特半導(dǎo)體

LTC5505

800MHzto1.5GHzDirectConversionQuadratureDemodulator

LINERLinear Technology

凌力爾特凌特半導(dǎo)體

LTC5505

40MHzto10GHzRMSPowerDetectorwith57dBDynamicRange

FEATURES nFrequencyRange:40MHzto10GHz nLinearDynamicRange:Upto57dB nAccurateRMSPowerMeasurementofHighCrest FactorModulatedWaveforms nExceptionalAccuracyOverTemperature:±0.5dB(Typ) nLowLinearityErrorwithinDynamicRange nSingle-EndedorDifferentialRFInputs

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    IRFR5505HR

  • 制造商:

    International Rectifier

  • 功能描述:

    Trans MOSFET P-CH 55V 18A 3-Pin(2+Tab) DPAK T/R

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
IR
22+
6000
終端可免費(fèi)供樣,支持BOM配單
詢價(jià)
IR
23+
8000
只做原裝現(xiàn)貨
詢價(jià)
IR
23+
7000
詢價(jià)
IR
23+
TO-252
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)
IR
24+
TO-252
45000
原裝現(xiàn)貨假一賠十
詢價(jià)
IR
2022
TO-252
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
詢價(jià)
IR
24+
TO-252
33055
詢價(jià)
IR
24+
TO-252
16800
絕對(duì)原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢(shì)!?
詢價(jià)
IR
2016+
TO-252
6528
房間原裝進(jìn)口現(xiàn)貨假一賠十
詢價(jià)
`
16+
BGA
1068
原裝現(xiàn)貨假一罰十
詢價(jià)
更多IRFR5505HR供應(yīng)商 更新時(shí)間2024-12-27 14:00:00