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IXFP6N120

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=6A@TC=25℃ ·DrainSourceVoltage-VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.75Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andPFCCircuits..

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFP6N120P

Polar HiPerFET Power MOSFET

Polar?HiPerFET?PowerMOSFET N-ChannelEnhancementModeAvalancheRated FastIntrinsicDiode Features ●InternationalStandardPackages ●Dynamicdv/dtRating ●AvalancheRated ●FastIntrinsicDiode ●LowQG ●LowRDS(on) ●LowDrain-to-TabCapacitance ●LowPackageInductance Advant

IXYS

IXYS Corporation

IXFP6N120P

Power MOSFET

IXYS

IXYS Corporation

DTP6N120SC

1200VN-ChannelSiliconCarbidePowerMOSFET

Features ?Highblockingvoltage ?Highspeedswitchingwithlowcapacitance ?Highoperatingjunctiontemperaturecapability ?Veryfastandrobustintrinsicbodydiode Applications ?Solarinverters ?UPS ?HighvoltageDC/DCconverters ?Switchmodepowersupplies

DINTEK

DinTek Semiconductor Co,.Ltd

IXFA6N120P

PolarHiPerFETPowerMOSFET

Polar?HiPerFET?PowerMOSFET N-ChannelEnhancementModeAvalancheRated FastIntrinsicDiode Features ●InternationalStandardPackages ●Dynamicdv/dtRating ●AvalancheRated ●FastIntrinsicDiode ●LowQG ●LowRDS(on) ●LowDrain-to-TabCapacitance ●LowPackageInductance Advant

IXYS

IXYS Corporation

IXFA6N120P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=6A@TC=25℃ ·DrainSourceVoltage :VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFA6N120P

PowerMOSFET

IXYS

IXYS Corporation

IXFH6N120

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=6A@TC=25℃ ·DrainSourceVoltage- :VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.6Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH6N120

HighVoltageHiPerFETPowerMOSFET

HighVoltageHiPerFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandto

IXYS

IXYS Corporation

IXFH6N120P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=6.0A@TC=25℃ ·DrainSourceVoltage :VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.75Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號：

    IXFP6N120

  • 功能描述：

    MOSFET POLAR HIPERFET WITH REDUCED RDS 1200V 6A

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
IXYS
23+
TO-220-3
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
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IXYS
1931+
N/A
278
加我qq或微信，了解更多詳細(xì)信息,體驗(yàn)一站式購物
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IXYS
1809+
TO-220
326
就找我吧!--邀您體驗(yàn)愉快問購元件!
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IXYS
23+
TO-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
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IXYS
22+
NA
278
加我QQ或微信咨詢更多詳細(xì)信息,
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IXYS
22+
TO2203
9000
原廠渠道,現(xiàn)貨配單
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IXYS
21+
TO2203
13880
公司只售原裝,支持實(shí)單
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IXYS
23+
TO2203
9000
原裝正品，支持實(shí)單
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TO-247/NS
15
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
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st
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更多IXFP6N120供應(yīng)商 更新時(shí)間2025-2-8 15:32:00

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