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JMTK80N06A

JJWJieJie Microelectronics Co., Ltd.

捷捷微江蘇捷捷微電子股份有限公司

PDF上傳者:深圳市溢航科技有限公司

LZP80N06P

N-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體(臺灣)有限公司

MCAC80N06Y

N-ChannelPowerMOSFET

MCCMicro Commercial Components

美微科美微科半導體股份有限公司

MCU80N06

N-ChannelEnhancementModeFieldEffectTransistor

MCCMicro Commercial Components

美微科美微科半導體股份有限公司

ME80N06T

N-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體(臺灣)有限公司

NP80N06CLC

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION ThisproductisN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ·Channeltemperature175degreerated ·Superlowon-stateresistance RDS(on)1=15mWMAX.(VGS=10V,ID=40

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N06CLD

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=80A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=13mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

NP80N06CLD

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE FEATURES ·ChannelTemperature175degreerated ·SuperLowOn-stateResistance RDS(on)1=13mW(MAX.)(VGS=10V,ID=40A) RDS(on)2=17mW(MAX.)(VGS=5V,ID=40A) ·LowCiss:Ciss=2360pF(TYP.) ·Built-inGateprotectiond

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N06DLC

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION ThisproductisN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ·Channeltemperature175degreerated ·Superlowon-stateresistance RDS(on)1=15mWMAX.(VGS=10V,ID=40

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N06DLD

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=80A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=13mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

NP80N06DLD

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE FEATURES ·ChannelTemperature175degreerated ·SuperLowOn-stateResistance RDS(on)1=13mW(MAX.)(VGS=10V,ID=40A) RDS(on)2=17mW(MAX.)(VGS=5V,ID=40A) ·LowCiss:Ciss=2360pF(TYP.) ·Built-inGateprotectiond

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N06ELC

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION ThisproductisN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ·Channeltemperature175degreerated ·Superlowon-stateresistance RDS(on)1=15mWMAX.(VGS=10V,ID=40

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N06ELD

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=80A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=13mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

NP80N06ELD

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE FEATURES ·ChannelTemperature175degreerated ·SuperLowOn-stateResistance RDS(on)1=13mW(MAX.)(VGS=10V,ID=40A) RDS(on)2=17mW(MAX.)(VGS=5V,ID=40A) ·LowCiss:Ciss=2360pF(TYP.) ·Built-inGateprotectiond

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N06MLG

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=80A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.6mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

NP80N06MLG

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N06MLG

N-Channel60V(D-S)MOSFET

FEATURES ?175°CJunctionTemperature ?TrenchFET?PowerMOSFET ?Materialcategorization:

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體(臺灣)有限公司

NP80N06MLG

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION TheNP80N06MLG,NP80N06NLG,andNP80N06PLGareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Logiclevel ?Built-ingateprotectiondiode ?Superlowon-stateresistance -NP80N06MLG,NP80N06NLG RDS(on)1=8.6mΩMAX

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N06NLG

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N06NLG

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION TheNP80N06MLG,NP80N06NLG,andNP80N06PLGareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Logiclevel ?Built-ingateprotectiondiode ?Superlowon-stateresistance -NP80N06MLG,NP80N06NLG RDS(on)1=8.6mΩMAX

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

供應商型號品牌批號封裝庫存備注價格
捷捷微
23+
TO-220C-3L
68000
捷捷微全系列供應,支持終端生產(chǎn)
詢價
I-CORE(中微愛芯)
23+
SOP24
5000
誠信服務,絕對原裝原盤
詢價
24+
N/A
60000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
詢價
捷捷微
23+
TO-220C-3L
50000
專業(yè)配單,原裝正品假一罰十,代理渠道價格優(yōu)
詢價
JJW捷捷微
22+
TO-263
8310
原廠原裝,價格優(yōu)勢!13246658303
詢價
JJW
22+
TO-263
10000
原裝正品,渠道現(xiàn)貨
詢價
JJW/捷捷微
22+
TO-263
59028
原裝正品
詢價
JJW
24+
TO-263
10000
一級代理保證進口原裝正品現(xiàn)貨假一罰十價格合理
詢價
JJW
2342
TO-263
20000
原裝正品價格優(yōu)惠,志同道合共謀發(fā)展
詢價
JJW
2218
TO-263
59228
全新原裝
詢價
更多JMTC80N06A供應商 更新時間2025-1-14 19:01:00