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M5M4V4265CTP-7S中文資料三菱電機數(shù)據(jù)手冊PDF規(guī)格書

M5M4V4265CTP-7S
廠商型號

M5M4V4265CTP-7S

功能描述

EDO (HYPER PAGE) MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM

文件大小

317.4 Kbytes

頁面數(shù)量

31

生產(chǎn)廠商 Mitsubishi Electric Semiconductor
企業(yè)簡稱

Mitsubishi三菱電機

中文名稱

三菱電機株式會社官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-3-13 14:57:00

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M5M4V4265CTP-7S規(guī)格書詳情

DESCRIPTION

This is a family of 262144-word by 16-bit dynamic RAMs with EDO mode fuction, fabricated with the high performance CMOS process, and is ideal for the buffer memory systems of personal computer graphics and HDD where high speed, low power dissipation, and low costs are essential. The use of double-layer metalization process technology and a single-transistor dynamic storage stacked capacitor cell provide high circuit density at reduced costs. The lower supply (3.3V) operation, due to the optimization of transistor structure, provides low power dissipation while maintaining high speed operation. Multiplexed address inputs permit both a reduction in pins and an increase in system densities. Self or extended refresh current is low enough for battery back-up application. This device has 2CAS and 1W terminals with a refresh cycle of 512 cycles every 8.2ms.

FEATURES

● Standard 40 pin SOJ, 44 pin TSOP (II)

● Single 3.3±0.3V supply

● Low stand-by power dissipation

CMOS Input level ---------------------------------- 1.8mW (Max)

CMOS Input level ---------------------------------- 360μW (Max) *

● Operating power dissipation

M5M4V4265CXX-5,-5S -------------------------------- 486mW (Max)

M5M4V4265CXX-6,-6S -------------------------------- 432mW (Max)

M5M4V4265CXX-7,-7S -------------------------------- 396mW (Max)

● Self refresh capability *

Self refresh current ------------------------------ 100μA (Max)

● Extended refresh capability

Extended refresh current -------------------------- 100μA (Max)

● EDO mode (512-column random access), Read-modify-write, RASonly refresh, CAS before RAS refresh, Hidden refresh capabilities.

● Early-write mode, OE and W to control output buffer impedance

● 512 refresh cycles every 8.2ms (A0~A8)

● 512 refresh cycles every 128ms (A0~A8) *

● Byte or word control for Read/Write operation (2CAS, 1W type)

* : Applicable to self refresh version (M5M4V4265CJ,TP-5S,-6S, -7S : option) only

APPLICATION

Microcomputer memory, Refresh memory for CRT, Frame buffer memory for CRT

產(chǎn)品屬性

  • 型號:

    M5M4V4265CTP-7S

  • 制造商:

    MITSUBISHI

  • 制造商全稱:

    Mitsubishi Electric Semiconductor

  • 功能描述:

    EDO(HYPER PAGE) MODE 4194304-BIT(262144-WORD BY 16-BIT) DYNAMIC RAM

供應商 型號 品牌 批號 封裝 庫存 備注 價格
MITSUBISHI
24+
20-SOP
100
原裝現(xiàn)貨假一罰十
詢價
MIT
23+
O-NEWS
8650
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!
詢價
MITSUBIS
22+23+
TSOP
37264
絕對原裝正品全新進口深圳現(xiàn)貨
詢價
MIT
06+
TSOP2
1000
自己公司全新庫存絕對有貨
詢價
MITSUBISHI/三菱
23+
NA/
600
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
詢價
MIT
2020+
SOP28
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
詢價
MITSUBISHI/三菱
2022
TSOP20
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
詢價
9410
84
公司優(yōu)勢庫存 熱賣中!
詢價
24+
3000
公司存貨
詢價
MIT
2020+
O-NEWS
300
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
詢價