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首頁 >MBRJ30H60CTG>規(guī)格書列表

零件編號(hào)	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
MBRJ30H60CTG	文件：170.81 Kbytes Page：10 Pages	SWITCHMODE Power Rectifier	ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司	ONSEMI
STGB30H60DF	文件：1.95033 Mbytes Page：24 Pages	600V,30Ahighspeedtrenchgatefield-stopIGBT Description ThisdeviceisanIGBTdevelopedusingan advancedproprietarytrenchgateandfieldstop structure.ThisIGBTseriesofferstheoptimum compromisebetweenconductionandswitching losses,maximizingtheefficiencyofveryhigh frequencyconverters.Furthermore,apositive VCE(s	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STGB30H60DFB	文件：1.75373 Mbytes Page：21 Pages	Trenchgatefield-stopIGBT,HBseries600V,30Ahighspeed Description ThesedevicesareIGBTsdevelopedusingan advancedproprietarytrenchgateandfieldstop structure.ThedeviceispartofthenewHBseries ofIGBTs,whichrepresentanoptimum compromisebetweenconductionandswitching lossestomaximizetheefficiencyofany frequencyconve	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STGB30H60DFB	文件：334.79 Kbytes Page：4 Pages	TrenchgateField-StopIGBT DESCRIPTION ·LowSaturationVoltage:VCE(sat)=2.0V@IC=30A ·HighCurrentCapability ·HighInputImpedance ·FastSwitching APPLICATIONS ·SynchronousRectificationinSMPS ·AutomotiveChargers ·UPS,PFC ·HighVoltageAuxiliaries	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
STGB30H60DLFB	文件：1.74476 Mbytes Page：20 Pages	Trenchgatefield-stopIGBT,HBseries600V,30Ahighspeed Description ThesedevicesareIGBTsdevelopedusingan advancedproprietarytrenchgateandfieldstop structure.ThedeviceispartofthenewHB seriesofIGBTs,whichrepresentanoptimum compromisebetweenconductionandswitching lossestomaximizetheefficiencyofany frequencyconve	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STGB30H60DLLFBAG	文件：1.00949 Mbytes Page：17 Pages	Automotive-gradetrenchgatefield-stopIGBT,HBseries600V,30Ahighspeed Features ?AEC-Q101qualified ?Maximumjunctiontemperature:TJ=175°C ?Logiclevelgatedrive ?Highspeedswitchingseries ?Minimizedtailcurrent ?VCE(sat)=1.7V(typ.)@IC=30A ?LowVFsoftrecoveryco-packageddiode ?Tightparametersdistribution ?Saferparalleling ?L	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STGF30H60DF	文件：1.95033 Mbytes Page：24 Pages	600V,30Ahighspeedtrenchgatefield-stopIGBT Description ThisdeviceisanIGBTdevelopedusingan advancedproprietarytrenchgateandfieldstop structure.ThisIGBTseriesofferstheoptimum compromisebetweenconductionandswitching losses,maximizingtheefficiencyofveryhigh frequencyconverters.Furthermore,apositive VCE(s	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STGO30H60DLLFBAG	文件：1.48747 Mbytes Page：15 Pages	Automotive-gradetrenchgatefield-stop,600V,30A,high-speedHBseriesIGBTinaTO?LLpackage Features ?AEC-Q101qualified ?Maximumjunctiontemperature:TJ=175°C ?Logiclevelgatedrive ?High-speedswitchingseries ?Minimizedtailcurrent ?VCE(sat)=1.6V(typ.)@IC=30A ?LowVFsoft-recoveryco-packageddiode ?Tightparameterdistribution ?Saferparalleling ?Lo	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STGP30H60DF	文件：1.95033 Mbytes Page：24 Pages	600V,30Ahighspeedtrenchgatefield-stopIGBT Description ThisdeviceisanIGBTdevelopedusingan advancedproprietarytrenchgateandfieldstop structure.ThisIGBTseriesofferstheoptimum compromisebetweenconductionandswitching losses,maximizingtheefficiencyofveryhigh frequencyconverters.Furthermore,apositive VCE(s	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STGP30H60DFB	文件：1.75373 Mbytes Page：21 Pages	Trenchgatefield-stopIGBT,HBseries600V,30Ahighspeed Description ThesedevicesareIGBTsdevelopedusingan advancedproprietarytrenchgateandfieldstop structure.ThedeviceispartofthenewHBseries ofIGBTs,whichrepresentanoptimum compromisebetweenconductionandswitching lossestomaximizetheefficiencyofany frequencyconve	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STGW30H60DF	文件：1.95033 Mbytes Page：24 Pages	600V,30Ahighspeedtrenchgatefield-stopIGBT Description ThisdeviceisanIGBTdevelopedusingan advancedproprietarytrenchgateandfieldstop structure.ThisIGBTseriesofferstheoptimum compromisebetweenconductionandswitching losses,maximizingtheefficiencyofveryhigh frequencyconverters.Furthermore,apositive VCE(s	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STGW30H60DFB	文件：1.43779 Mbytes Page：20 Pages	Trenchgatefield-stopIGBT,HBseries600V,30Ahighspeed Description ThesedevicesareIGBTsdevelopedusingan advancedproprietarytrenchgatefield-stop structure.ThesedevicesarepartofthenewHB seriesofIGBTs,whichrepresentanoptimum compromisebetweenconductionandswitching losstomaximizetheefficiencyofanyfrequency convert	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STGW30H60DLFB	文件：1.74476 Mbytes Page：20 Pages	Trenchgatefield-stopIGBT,HBseries600V,30Ahighspeed Description ThesedevicesareIGBTsdevelopedusingan advancedproprietarytrenchgateandfieldstop structure.ThedeviceispartofthenewHB seriesofIGBTs,whichrepresentanoptimum compromisebetweenconductionandswitching lossestomaximizetheefficiencyofany frequencyconve	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STGWA30H60DFB	文件：1.43779 Mbytes Page：20 Pages	Trenchgatefield-stopIGBT,HBseries600V,30Ahighspeed Description ThesedevicesareIGBTsdevelopedusingan advancedproprietarytrenchgatefield-stop structure.ThesedevicesarepartofthenewHB seriesofIGBTs,whichrepresentanoptimum compromisebetweenconductionandswitching losstomaximizetheefficiencyofanyfrequency convert	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STGWT30H60DFB	文件：1.43779 Mbytes Page：20 Pages	Trenchgatefield-stopIGBT,HBseries600V,30Ahighspeed Description ThesedevicesareIGBTsdevelopedusingan advancedproprietarytrenchgatefield-stop structure.ThesedevicesarepartofthenewHB seriesofIGBTs,whichrepresentanoptimum compromisebetweenconductionandswitching losstomaximizetheefficiencyofanyfrequency convert	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STPS30H60C	文件：281.01 Kbytes Page：11 Pages	Avalancherated	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STPS30H60CFP	文件：281.01 Kbytes Page：11 Pages	Avalancherated	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STPS30H60CG	文件：281.01 Kbytes Page：11 Pages	Avalancherated	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STPS30H60CG-TR	文件：281.01 Kbytes Page：11 Pages	Avalancherated	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STPS30H60CR	文件：281.01 Kbytes Page：11 Pages	Avalancherated	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS

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供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市宏捷佳電子科技有限公司	MBRJL30100CT-BP	Micro Commercial Co	24+	TO-262-3 長引線 I?Pak TO-26	9350	獨(dú)立分銷商公司只做原裝誠心經(jīng)營免費(fèi)試樣正品保證	詢價(jià)
貿(mào)澤芯城（深圳）電子科技有限公司	MBRL10100CD	揚(yáng)杰	23+	TO-252	13000	原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種	詢價(jià)
中科航電（深圳）電子集團(tuán)有限公司	MBRL10100CD	揚(yáng)杰		TO-252	90000	公司集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-	詢價(jià)
浙江永芯科技有限公司	MBRL10100CD	YANGJIE	24+	TO-252	50000	原廠直銷全新原裝正品現(xiàn)貨歡迎選購	詢價(jià)
深圳市高捷芯城科技有限公司	MBRL10100CT	YANGJIE(揚(yáng)杰)	23+	TO220	8215	現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費(fèi)送樣,原廠技術(shù)支持!!!	詢價(jià)
現(xiàn)代芯城（深圳）科技有限公司	MBRL10100CT		24+	N/A	54000	一級(jí)代理-主營優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇	詢價(jià)
深圳市鵬和科技有限公司	MBRL1045U5G	FIRST	24+	TO-277	5000	全現(xiàn)原裝公司現(xiàn)貨	詢價(jià)
深圳市粵駿騰電子科技有限公司	MBRL1045U5G	FIRST	24+	TO-277	98000	原裝現(xiàn)貨假一罰十	詢價(jià)
深圳市威爾健半導(dǎo)體有限公司	MBRL1045U5G	FIRST/福斯特	23+	TO-277	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價(jià)
深圳硅原半導(dǎo)體有限公司	MBRL1045U5G	FIRST/福斯特	23+	TO277	28533	原盒原標(biāo),正品現(xiàn)貨誠信經(jīng)營價(jià)格美麗假一罰十!	詢價(jià)

更多MBRJ30H60CTG供應(yīng)商更新時(shí)間2025-1-11 11:03:00

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