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MRF284中文資料飛思卡爾數(shù)據(jù)手冊PDF規(guī)格書

MRF284
廠商型號

MRF284

功能描述

RF Power Field Effect Transistors

文件大小

376.13 Kbytes

頁面數(shù)量

12

生產(chǎn)廠商 Freescale Semiconductor, Inc
企業(yè)簡稱

freescale飛思卡爾

中文名稱

飛思卡爾半導(dǎo)體官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-2-11 17:38:00

MRF284規(guī)格書詳情

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. To be used in Class A and Class AB for PCN-PCS/cellular radio and wireless local loop.

? Specified Two-Tone Performance @ 2000 MHz, 26 Volts

Output Power = 30 Watts PEP

Power Gain = 9 dB

Efficiency = 30

Intermodulation Distortion = -29 dBc

? Typical Single-Tone Performance at 2000 MHz, 26 Volts

Output Power = 30 Watts CW

Power Gain = 9.5 dB

Efficiency = 45

? Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 30 Watts CW Output Power

Features

? Excellent Thermal Stability

? Characterized with Series Equivalent Large-Signal Impedance Parameters

? Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal.

? RoHS Compliant

? In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.

產(chǎn)品屬性

  • 型號:

    MRF284

  • 制造商:

    Freescale Semiconductor

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