首頁 >NGTG30N60FLNG>規(guī)格書列表
零件編號(hào) | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
InsulatedGateBipolarTransistor(IGBT) | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
InsulatedGateBipolarTransistor(IGBT) | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
IGBT Features ?600V,30A ?VCE(sat)(typ.)=1.9V@VGE=15V,IC=30A ?Highspeedswitching ?Highersystemefficiency ?Softcurrentturn-offwaveforms GeneralDescription TrenchIGBTsofferlowerlossesandhigherenergy efficiencyforapplicationsuchasSMPS,generalinverter andothersoftswi | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣電子唯圣電子有限公司 | GWSEMI | ||
IGBT Features 600V,30A VCE(sat)(typ.)=1.9V@VGE=15V,IC=30A Highspeedswitching Highersystemefficiency Softcurrentturn-offwaveforms GeneralDescription TrenchIGBTsofferlowerlossesandhigherenergy efficiencyforapplicationsuchasSMPS,generalinverter andothersoftswitchingapp | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣電子唯圣電子有限公司 | GWSEMI | ||
IGBT Features 600V,30A VCE(sat)(typ.)=1.9V@VGE=15V,IC=30A Highspeedswitching Highersystemefficiency Softcurrentturn-offwaveforms GeneralDescription TrenchIGBTsofferlowerlossesandhigherenergy efficiencyforapplicationsuchasSMPS,generalinverter andothersoftswitchingapp | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣電子唯圣電子有限公司 | GWSEMI | ||
FastIGBTinNPT-technology | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
FastIGBTinNPT-technology75lowerEoffcomparedtopreviousgeneration | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
ShortCircuitRatedIGBT | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
ShortCircuitRatedIGBT | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
FastIGBTinNPT-technology | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
FastIGBTinNPT-technology | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
FastIGBTinNPT-technology | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
HighSpeedIGBTinNPT-technology30lowerEoffcomparedtopreviousgeneration HighSpeedIGBTinNPT-technology ?30lowerEoffcomparedtopreviousgeneration ?Shortcircuitwithstandtime–10μs ?Designedforoperationabove30kHz ?NPT-Technologyfor600Vapplicationsoffers: -parallelswitchingcapability -moderateEoffincreasewithtemperature -verytigh | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
HIGHTSPEEDIGBTCHIPINNPT-TECHNOLOGY | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
FastIGBTinNPT-technology | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
FastIGBTinNPT-technology | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
FastIGBTinNPT-technology | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
HighSpeedIGBTinNPT-technology30lowerEoffcomparedtopreviousgeneration HighSpeedIGBTinNPT-technology ?30lowerEoffcomparedtopreviousgeneration ?Shortcircuitwithstandtime–10μs ?Designedforoperationabove30kHz ?NPT-Technologyfor600Vapplicationsoffers: -parallelswitchingcapability -moderateEoffincreasewithtemperature -verytigh | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
ELSeriesPowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
ESeriesPowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay |
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
ON |
24+ |
TO3P |
5000 |
只做原裝公司現(xiàn)貨 |
詢價(jià) | ||
ON |
22+23+ |
TO3P |
27832 |
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價(jià) | ||
ONSemiconductor |
18+ |
NA |
3364 |
進(jìn)口原裝正品優(yōu)勢供應(yīng)QQ3171516190 |
詢價(jià) | ||
三年內(nèi) |
1983 |
只做原裝正品 |
詢價(jià) | ||||
ON |
1809+ |
TO-247 |
375 |
就找我吧!--邀您體驗(yàn)愉快問購元件! |
詢價(jià) | ||
ON/安森美 |
21+ |
NA |
12820 |
只做原裝,質(zhì)量保證 |
詢價(jià) | ||
ON Semiconductor |
22+ |
TO247 |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價(jià) | ||
ON |
2022+ |
NA |
8600 |
原裝正品,歡迎來電咨詢! |
詢價(jià) | ||
ON/安森美 |
22+ |
N/A |
12245 |
現(xiàn)貨,原廠原裝假一罰十! |
詢價(jià) | ||
ON Semiconductor |
23+ |
TO247 |
9000 |
原裝正品,支持實(shí)單 |
詢價(jià) |
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