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PD55003-E_V01中文資料意法半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

PD55003-E_V01
廠商型號

PD55003-E_V01

功能描述

RF power transistor from the LdmoST plastic family of N-channel enhancement-mode lateral MOSFETs

文件大小

473.99 Kbytes

頁面數(shù)量

29

生產(chǎn)廠商 STMicroelectronics
企業(yè)簡稱

STMICROELECTRONICS意法半導(dǎo)體

中文名稱

意法半導(dǎo)體集團(tuán)官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-5-25 9:26:00

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PD55003-E_V01規(guī)格書詳情

Features

■ Excellent thermal stability

■ Common source configuration

■ POUT = 3 W with 17dB gain @ 500 MHz / 12.5 V

Description

The PD55003-E is a common source N-channel,

enhancement-mode lateral field-effect RF power

transistor. It is designed for high gain, broad band

commercial and industrial applications. It

operates at 12 V in common source mode at

frequencies of up to 1 GHz. The PD55003 boasts

excellent gain, linearity and reliability thanks to

ST’s latest LDMOS technology mounted in the

first true SMD plastic RF power package, the

PowerSO-10RF.

The PD55003’s superior linearity performance

makes it an ideal solution for car mobile radios.

The PowerSO-10RF plastic package is designed

for high reliability, and is the first JEDECapproved,

high power SMD package from ST. It

has been optimized for RF requirements and

offers excellent RF performance and ease of

assembly.

Mounting recommendations are provided in

application note AN1294, available on

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