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STGB10HF60KDT4

Marking：GB10HF60KD；Package：D2PAK；10 A - 600 V - short-circuit rugged IGBT

Features ■Lowon-voltagedrop(VCE(sat)) ■Operatingjunctiontemperatureupto175°C ■LowCres/Ciesratio(nocrossconduction susceptibility) ■Tightparameterdistribution ■Ultrafastsoft-recoveryantiparalleldiode ■Short-circuitrugged Applications ■Motordrives ■Highfre

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGB10HF60KDT4

Marking：GB10HF60KD；Package：D2PAK；10 A - 600 V - short-circuit rugged IGBT

Features ■Lowon-voltagedrop(VCE(sat)) ■Operatingjunctiontemperatureupto175°C ■LowCres/Ciesratio(nocrossconduction susceptibility) ■Tightparameterdistribution ■Ultrafastsoft-recoveryantiparalleldiode ■Short-circuitrugged Applications ■Motordrives ■Highfre

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGB10M65DF2

Marking：G10M65DF2；Package：D2PAK；Trench gate field-stop IGBT, M series 650 V, 10 A low-loss in D2PAK package

Description ThisdeviceisanIGBTdevelopedusingan advancedproprietarytrenchgatefield-stop structure.ThedeviceispartoftheMseries IGBTs,whichrepresentanoptimalbalance betweeninvertersystemperformanceand efficiencywherelow-lossandshort-circuit functionalityareess

STMICROELECTRONICSSTMicroelectronics

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STGB10M65DF2_V01

Trench gate field-stop IGBT, M series 650 V, 10 A low-loss in D2PAK package

Description ThisdeviceisanIGBTdevelopedusingan advancedproprietarytrenchgatefield-stop structure.ThedeviceispartoftheMseries IGBTs,whichrepresentanoptimalbalance betweeninvertersystemperformanceand efficiencywherelow-lossandshort-circuit functionalityareess

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGB10N60L

N-CHANNEL 10A - 600V D2PAK LOGIC LEVEL IGBT

N-CHANNEL10A-600VD2PAKLOGICLEVELIGBT ■HIGHINPUTIMPEDANCE(VOLTAGEDRIVEN) ■VERYLOWON-VOLTAGEDROP(Vcesat) ■LOWTHRESHOLDVOLTAGE(LOGICLEVELINPUT) ■HIGHCURRENTCAPABILITY ■OFFLOSSESINCLUDETAILCURRENT ■SURFACE-MOUNTINGD2PAK(TO-263)POWERPACKAGEINTUBE(NOSUFFIX)

STMICROELECTRONICSSTMicroelectronics

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STGB10NB37LZ

N-CHANNEL CLAMPED 10A D2PAK INTERNALLY CLAMPED PowerMESH IGBT

DESCRIPTION Usingthelatesthighvoltagetechnologybasedonapatentedstriplayout,STMicroelectronicshasdesignedanadvancedfamilyofIGBTs,thePowerMESH?IGBTs,withoutstandingperformances.Thebuiltincollector-gatezenerexhibitsaverypreciseactiveclampingwhilethegate-emitt

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGB10NB37LZ

Marking：GB10NB37LZ；Package：D2PAK；10 A - 410 V internally clamped IGBT

Description ThisIGBTutilizestheadvancedPowerMESH? processresultinginanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior.Thebuiltincollector-gateZenerexhibits averypreciseactiveclampingwhilethegateemitterZenersuppliesanESDprotection. Feat

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGB10NB37LZ_V01

10 A - 410 V internally clamped IGBT

Description ThisIGBTutilizestheadvancedPowerMESH? processresultinginanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior.Thebuiltincollector-gateZenerexhibits averypreciseactiveclampingwhilethegateemitterZenersuppliesanESDprotection. Feat

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGB10NB37LZT4

Marking：GB10NB37LZ；Package：D2PAK；10 A - 410 V internally clamped IGBT

Description ThisIGBTutilizestheadvancedPowerMESH? processresultinginanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior.Thebuiltincollector-gateZenerexhibits averypreciseactiveclampingwhilethegateemitterZenersuppliesanESDprotection. Feat

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGB10NC60HD_V01

600 V - 10 A - very fast IGBT

Description ThisIGBTutilizestheadvancedPowerMESH? processresultinginanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior. Features ■Lowon-voltagedrop(VCE(sat)) ■LowCRES/CIESratio(nocross-conduction susceptibility) ■Verysoftultrafastrecov

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

詳細(xì)參數(shù)

  • 型號(hào)：

    STG

  • 制造商：

    STMICROELECTRONICS

  • 制造商全稱：

    STMicroelectronics

  • 功能描述：

    LOW VOLTAGE 0.5? MAX QUAD SPDT SWITCH WITH BREAK BEFORE MAKE FEATURE

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
ST
24+
QFN
4897
絕對(duì)原裝!現(xiàn)貨熱賣!
 詢價(jià)
ST
24+
TQFN-16
33000
原裝現(xiàn)貨
 詢價(jià)
STM原廠目錄
24+
VFQFPN162.5x
28500
授權(quán)代理直銷,原廠原裝現(xiàn)貨,假一罰十,特價(jià)銷售
 詢價(jià)
ST
21+
TQFN-16
23480
詢價(jià)
ST
23+
QFN/16
7000
絕對(duì)全新原裝!100%保質(zhì)量特價(jià)!請(qǐng)放心訂購(gòu)!
 詢價(jià)
ST
2020+
QFN-16
4616
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價(jià)
STM
2016+
QFN16
2563
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
 詢價(jià)
STMicroelectronics
23+
16-QFN
7750
全新原裝優(yōu)勢(shì)
 詢價(jià)
ST
24+
原廠原封
6523
進(jìn)口原裝公司百分百現(xiàn)貨可出樣品
 詢價(jià)
STM
16+
QFN16
8800
進(jìn)口原裝大量現(xiàn)貨熱賣中
 詢價(jià)
更多STG供應(yīng)商 更新時(shí)間2025-4-21 16:17:00

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