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STGB20NC60V_V01

30 A - 600 V - very fast IGBT

Description ThisIGBTutilizestheadvancedPowerMESH? processresultinginanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior. Features ?Highfrequencyoperationupto50kHz ?LowerCRES/CIESratio(nocross-conduction susceptibility) ?Highcurrentcapa

STMICROELECTRONICSSTMicroelectronics

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STGB25N40LZAG

Automotive-grade 400 V internally clamped IGBT ESCIS 320 mJ

Features ?AEC-Q101qualified ?SCISenergyof320mJ@TJ=25°C ?Partsare100testedinSCIS ?ESDgate-emitterprotection ?Gate-collectorhighvoltageclamping ?Logiclevelgatedrive ?Verylowsaturationvoltage ?Highpulsedcurrentcapability ?Gateandgate-emitterresistor

STMICROELECTRONICSSTMicroelectronics

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STGB30H60DF

Marking:GB30H60DF;Package:D2PAK;600 V, 30 A high speed trench gate field-stop IGBT

Description ThisdeviceisanIGBTdevelopedusingan advancedproprietarytrenchgateandfieldstop structure.ThisIGBTseriesofferstheoptimum compromisebetweenconductionandswitching losses,maximizingtheefficiencyofveryhigh frequencyconverters.Furthermore,apositive VCE(s

STMICROELECTRONICSSTMicroelectronics

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STGB30H60DFB

Marking:GB30H60DFB;Package:D2PAK;Trench gate field-stop IGBT, HB series 600 V, 30 A high speed

Description ThesedevicesareIGBTsdevelopedusingan advancedproprietarytrenchgateandfieldstop structure.ThedeviceispartofthenewHBseries ofIGBTs,whichrepresentanoptimum compromisebetweenconductionandswitching lossestomaximizetheefficiencyofany frequencyconve

STMICROELECTRONICSSTMicroelectronics

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STGB30H60DFB

Trench gate Field-Stop IGBT

DESCRIPTION ·LowSaturationVoltage:VCE(sat)=2.0V@IC=30A ·HighCurrentCapability ·HighInputImpedance ·FastSwitching APPLICATIONS ·SynchronousRectificationinSMPS ·AutomotiveChargers ·UPS,PFC ·HighVoltageAuxiliaries

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STGB30H60DLFB

Marking:GB30H60DLFB;Package:D2PAK;Trench gate field-stop IGBT, HB series 600 V, 30 A high speed

Description ThesedevicesareIGBTsdevelopedusingan advancedproprietarytrenchgateandfieldstop structure.ThedeviceispartofthenewHB seriesofIGBTs,whichrepresentanoptimum compromisebetweenconductionandswitching lossestomaximizetheefficiencyofany frequencyconve

STMICROELECTRONICSSTMicroelectronics

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STGB30H60DLLFBAG

Automotive-grade trench gate field-stop IGBT, HB series 600 V, 30 A high speed

Features ?AEC-Q101qualified ?Maximumjunctiontemperature:TJ=175°C ?Logiclevelgatedrive ?Highspeedswitchingseries ?Minimizedtailcurrent ?VCE(sat)=1.7V(typ.)@IC=30A ?LowVFsoftrecoveryco-packageddiode ?Tightparametersdistribution ?Saferparalleling ?L

STMICROELECTRONICSSTMicroelectronics

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STGB30H65DFB2

Marking:G30H65DFB2;Trench gate field-stop, 650 V, 30 A, high-speed HB2 series IGBT in a D2PAK package

Features ?Maximumjunctiontemperature:TJ=175°C ?LowVCE(sat)=1.65V(typ.)@IC=30A ?Veryfastandsoftrecoveryco-packageddiode ?Minimizedtailcurrent ?Tightparameterdistribution ?Lowthermalresistance ?PositiveVCE(sat)temperaturecoefficient Applications ?We

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STGB35N35LZ

Automotive-grade 345 V internally clamped IGBT, EAS 450 mJ

Description ThisapplicationspecificIGBTutilizesthemostadvancedPowerMESH?technology.Thebuilt-inZenerdiodesbetweengate-collectorandgateemitterprovideovervoltageprotectioncapabilities.Thedevicealsoexhibitslowon-statevoltagedropandlowthresholddriveforuseinautomot

STMICROELECTRONICSSTMicroelectronics

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STGB35N35LZ-1

Automotive-grade 345 V internally clamped IGBT, EAS 450 mJ

Description ThisapplicationspecificIGBTutilizesthemostadvancedPowerMESH?technology.Thebuilt-inZenerdiodesbetweengate-collectorandgateemitterprovideovervoltageprotectioncapabilities.Thedevicealsoexhibitslowon-statevoltagedropandlowthresholddriveforuseinautomot

STMICROELECTRONICSSTMicroelectronics

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ST
24+
TO-263
80000
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ST
23+
TO-263
50000
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ST
23+
TO-263
16900
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ST/意法
22+
TO-263
87471
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ST
20+
TO-263
25000
全新原裝現(xiàn)貨 假一賠十
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ST
24+
TO-263
200000
原裝進(jìn)口正口,支持樣品
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ST/意法
24+
TO-263
60000
全新原裝現(xiàn)貨
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ST
23+
TO-263
8650
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
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STMicro.
23+
DPAK
7750
全新原裝優(yōu)勢
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ST
24+
TO-263
7500
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更多STG供應(yīng)商 更新時(shí)間2025-4-21 22:30:00