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STGB7NC60HD

N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode

Description ThesedevicesareveryfastIGBTdeveloped usingadvancedPowerMESH?technology.This processguaranteesanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior.Thesedevicesarewell-suitedfor resonantorsoft-switchingapplications. Features ■Lowo

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGB7NC60HD_V01

N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode

Description ThesedevicesareveryfastIGBTdeveloped usingadvancedPowerMESH?technology.This processguaranteesanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior.Thesedevicesarewell-suitedfor resonantorsoft-switchingapplications. Features ■Lowo

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGB7NC60HD-1

Marking：GB7NC60HD；Package：I2PAK_TO-262；N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode

Description ThesedevicesareveryfastIGBTdeveloped usingadvancedPowerMESH?technology.This processguaranteesanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior.Thesedevicesarewell-suitedfor resonantorsoft-switchingapplications. Features ■Lowo

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGB7NC60HDT4

Marking：GB7NC60HD；Package：D2PAK；N-CHANNEL 14A - 600V - TO-220/TO-220FP/DPAK Very Fast PowerMESH IGBT

GeneralFeatures ■LOWERON-VOLTAGEDROP(Vcesat) ■OFFLOSSESINCLUDETAILCURRENT ■LOSSESINCLUDEDIODERECOVERY ENERGY ■LOWERCRES/CIESRATIO ■HIGHFREQUENCYOPERATIONUPTO70 KHz ■VERYSOFTULTRAFASTRECOVERYANTI PARALLELDIODE ■NEWGENERATIONPRODUCTSWITH TIGHTERPARAMETER

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGB7NC60HDT4

Marking：GB7NC60HD；Package：D2PAK_TO-263；N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode

Description ThesedevicesareveryfastIGBTdeveloped usingadvancedPowerMESH?technology.This processguaranteesanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior.Thesedevicesarewell-suitedfor resonantorsoft-switchingapplications. Features ■Lowo

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGD10NC60HDT4

Marking：GD10NC60HD；Package：DPAK；600 V - 10 A - very fast IGBT

Description ThisIGBTutilizestheadvancedPowerMESH? processresultinginanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior. Features ■Lowon-voltagedrop(VCE(sat)) ■LowCRES/CIESratio(nocross-conduction susceptibility) ■Verysoftultrafastrecov

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGD10NC60KDT4

Marking：GD10NC60KD；Package：DPAK；10 A, 600 V short-circuit rugged IGBT

Description ThesedevicesareveryfastIGBTsdeveloped usingadvancedPowerMESH?technology.This processguaranteesanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior.Thesedevicesarewell-suitedfor resonantorsoft-switchingapplications. Features ?Lowe

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGD18N40LZ

EAS 180 mJ - 400 V - internally clamped IGBT

Description Thisapplication-specificIGBTutilizesthemostadvancedPowerMESH?technology.Thebuilt-inZenerdiodesbetweengate-collectorandgate-emitterprovideovervoltageprotectioncapabilities.Thedevicealsoexhibitslowon-statevoltagedropandlowthresholddriveforuseinautomot

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGD18N40LZ-1

EAS 180 mJ - 400 V - internally clamped IGBT

Description Thisapplication-specificIGBTutilizesthemostadvancedPowerMESH?technology.Thebuilt-inZenerdiodesbetweengate-collectorandgate-emitterprovideovervoltageprotectioncapabilities.Thedevicealsoexhibitslowon-statevoltagedropandlowthresholddriveforuseinautomot

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGD18N40LZT4

Marking：GD18N40LZ；Package：DPAK；Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ

Description Thisapplication-specificIGBTutilizesthemostadvancedPowerMESHtechnology optimizedforcoildrivingintheharshenvironmentofautomotiveignitionsystems. Thedeviceshowverylowon-statevoltageandveryhighSCISenergycapabilityover awideoperatingtemperaturerange.

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

產(chǎn)品屬性

  • 產(chǎn)品編號：

    STGW45HF60WDI

  • 制造商：

    STMicroelectronics

  • 類別：

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單

  • 包裝：

    管件

  • 不同?Vge、Ic 時?Vce(on)（最大值）：

    2.5V @ 15V，30A

  • 開關(guān)能量：

    330μJ（關(guān)）

  • 輸入類型：

    標(biāo)準(zhǔn)

  • 25°C 時 Td（開/關(guān)）值：

    -/145ns

  • 測試條件：

    400V，30A，4.7 歐姆，15V

  • 工作溫度：

    -55°C ~ 150°C（TJ）

  • 安裝類型：

    通孔

  • 封裝/外殼：

    TO-247-3

  • 供應(yīng)商器件封裝：

    TO-247 長引線

  • 描述：

    IGBT 600V 70A 250W TO247

供應(yīng)商型號品牌批號封裝庫存備注價格
ST
2019
TO-247
19700
INFINEON品牌專業(yè)原裝優(yōu)質(zhì)
 詢價
ST/意法
17+
TO-247TO-247longlead
31518
原裝正品 可含稅交易
 詢價
ST
25+23+
TO-247
24424
絕對原裝正品現(xiàn)貨,全新深圳原裝進(jìn)口現(xiàn)貨
 詢價
ST
1926+
TO-247TO-247
6852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價
STM原廠目錄
24+
TO-247
28500
授權(quán)代理直銷,原廠原裝現(xiàn)貨,假一罰十,特價銷售
 詢價
ST
2447
TO-247
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價
STM
1809+
TO247-3
1675
就找我吧!--邀您體驗愉快問購元件!
 詢價
22+
NA
207
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價
ST
22+
TO-247
12245
現(xiàn)貨,原廠原裝假一罰十!
 詢價
ST/意法
23+
TO-247
10880
原裝正品，支持實單
 詢價
更多STG供應(yīng)商 更新時間2025-4-22 11:20:00

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