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STGB10NC60HDT4

Marking：GB10NC60HD；Package：D2PAK；600 V - 10 A - very fast IGBT

Description ThisIGBTutilizestheadvancedPowerMESH? processresultinginanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior. Features ■Lowon-voltagedrop(VCE(sat)) ■LowCRES/CIESratio(nocross-conduction susceptibility) ■Verysoftultrafastrecov

STMICROELECTRONICSSTMicroelectronics

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STGB10NC60KD

N-channel 600V - 10A - D2PAK / TO-220 / TO-220FP Short circuit rated PowerMESH IGBT

Description Usingthelatesthighvoltagetechnologybasedonapatentedstriplayout,STMicroelectronicshasdesignedanadvancedfamilyofIGBTs,thePowerMESH?IGBTs,withoutstandingperformances.Thesuffix“K”identifiesafamilyoptimizedforhighfrequencymotorcontrolapplicationswit

STMICROELECTRONICSSTMicroelectronics

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STGB10NC60KDT4

N-channel 600V - 10A - D2PAK / TO-220 / TO-220FP Short circuit rated PowerMESH IGBT

Description Usingthelatesthighvoltagetechnologybasedonapatentedstriplayout,STMicroelectronicshasdesignedanadvancedfamilyofIGBTs,thePowerMESH?IGBTs,withoutstandingperformances.Thesuffix“K”identifiesafamilyoptimizedforhighfrequencymotorcontrolapplicationswit

STMICROELECTRONICSSTMicroelectronics

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STGB10NC60KDT4

Marking：GB10NC60KD；Package：D2PAK；10 A, 600 V short-circuit rugged IGBT

Description ThesedevicesareveryfastIGBTsdeveloped usingadvancedPowerMESH?technology.This processguaranteesanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior.Thesedevicesarewell-suitedfor resonantorsoft-switchingapplications. Features ?Lowe

STMICROELECTRONICSSTMicroelectronics

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STGB15H60DF

Marking：GB15H60DF；Package：D2PAK；Trench gate field-stop IGBT, H series 600 V, 15 A high speed

Description ThisdeviceisanIGBTdevelopedusingan advancedproprietarytrenchgateandfieldstop structure.ThisIGBTseriesofferstheoptimum compromisebetweenconductionandswitching losses,maximizingtheefficiencyofveryhigh frequencyconverters.Furthermore,apositive VCE(s

STMICROELECTRONICSSTMicroelectronics

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STGB15M65DF2

Marking：G15M65DF2；Package：D2PAK；Trench gate field-stop IGBT M series, 650 V, 15 A low-loss in a D2PAK package

Description ThisdeviceisanIGBTdevelopedusingan advancedproprietarytrenchgatefield-stop structure.ThedeviceispartoftheMseries IGBTs,whichrepresentanoptimalbalance betweeninvertersystemperformanceand efficiencywherelow-lossandshort-circuit functionalityareess

STMICROELECTRONICSSTMicroelectronics

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STGB15M65DF2_V01

Trench gate field-stop IGBT M series, 650 V, 15 A low-loss in a D2PAK package

Description ThisdeviceisanIGBTdevelopedusingan advancedproprietarytrenchgatefield-stop structure.ThedeviceispartoftheMseries IGBTs,whichrepresentanoptimalbalance betweeninvertersystemperformanceand efficiencywherelow-lossandshort-circuit functionalityareess

STMICROELECTRONICSSTMicroelectronics

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STGB18N40LZ

EAS 180 mJ - 400 V - internally clamped IGBT

Description Thisapplication-specificIGBTutilizesthemostadvancedPowerMESH?technology.Thebuilt-inZenerdiodesbetweengate-collectorandgate-emitterprovideovervoltageprotectioncapabilities.Thedevicealsoexhibitslowon-statevoltagedropandlowthresholddriveforuseinautomot

STMICROELECTRONICSSTMicroelectronics

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STGB18N40LZ-1

EAS 180 mJ - 400 V - internally clamped IGBT

Description Thisapplication-specificIGBTutilizesthemostadvancedPowerMESH?technology.Thebuilt-inZenerdiodesbetweengate-collectorandgate-emitterprovideovervoltageprotectioncapabilities.Thedevicealsoexhibitslowon-statevoltagedropandlowthresholddriveforuseinautomot

STMICROELECTRONICSSTMicroelectronics

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STGB18N40LZT4

EAS 180 mJ - 400 V - internally clamped IGBT

Description Thisapplication-specificIGBTutilizesthemostadvancedPowerMESH?technology.Thebuilt-inZenerdiodesbetweengate-collectorandgate-emitterprovideovervoltageprotectioncapabilities.Thedevicealsoexhibitslowon-statevoltagedropandlowthresholddriveforuseinautomot

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

產(chǎn)品屬性

  • 產(chǎn)品編號：

    STGIB10CH60S-L

  • 制造商：

    STMicroelectronics

  • 類別：

    分立半導體產(chǎn)品 > 功率驅(qū)動器模塊

  • 系列：

    SLLIMM?

  • 包裝：

    卷帶（TR）

  • 類型：

    IGBT

  • 配置：

    三相反相器

  • 電壓 - 隔離：

    1500Vrms

  • 安裝類型：

    通孔

  • 封裝/外殼：

    26-PowerDIP 模塊（1.146"，29.10mm）

  • 描述：

    SLLIMM 2ND SERIES IPM, 3-PHASE I

供應商型號品牌批號封裝庫存備注價格
意法半導體
22+
NA
500000
萬三科技,秉承原裝,購芯無憂
 詢價
ST/意法
23+
11200
原廠授權一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO
 詢價
ST
1634+
NA
200
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
ST
24+
NA
200
只做原裝進口!正品支持實單!
 詢價
ST/意法
22+
26-PowerDIP
12000
只做原裝,全新原裝進口,假一罰十
 詢價
ST
150
只做正品
 詢價
ST
21+
原廠原封
23480
詢價
ST(意法)
23+
NA
20094
正納10年以上分銷經(jīng)驗原裝進口正品做服務做口碑有支持
 詢價
STMicroelectronics
24+
NA
3000
進口原裝正品優(yōu)勢供應
 詢價
ST
23+
DIP-IPM
5000
一級代理原裝現(xiàn)貨。
 詢價
更多STG供應商 更新時間2025-4-21 16:24:00

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