首頁 >VNS1NV04DTR>規(guī)格書列表
| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
包裝：管件 封裝/外殼：8-SOIC（0.154"，3.90mm 寬） 類別：集成電路（IC） 配電開關(guān)，負載驅(qū)動器 描述：IC PWR DRIVER N-CHANNEL 1:1 8SO | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | ||
OMNIFETIIfullyautoprotectedPowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | ||
??MNIFETII??FULLYAUTOPROTECTEDPOWERMOSFET Description TheVND1NV04,VNN1NV04,VNS1NV04aremonolithicdevicesdesignedinSTMicroelectronicsVIPowerM0-3Technology,intendedforreplacementofstandardPowerMOSFETsfromDCupto50KHzapplications. Builtinthermalshutdown,linearcurrentlimitationandovervoltageclampprotect | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | ||
forcarbodyapplications Description TheL5958includes6linearvoltageregulatorsanda2Apowerswitch,workingdownto4.5Vbatterylevel.Allthevoltageregulatorscanbeswitchedoffthroughthethreeenablepins. Features ■L5958sixoutputs: –8.5V@200mA –5.0V@300mA –3.3V@250mA | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | ||
OMNIFETIIfullyautoprotectedPowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | ||
OMNIFETIIfullyautoprotectedPowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | ||
??MNIFETII??FULLYAUTOPROTECTEDPOWERMOSFET Description TheVND1NV04,VNN1NV04,VNS1NV04aremonolithicdevicesdesignedinSTMicroelectronicsVIPowerM0-3Technology,intendedforreplacementofstandardPowerMOSFETsfromDCupto50KHzapplications. Builtinthermalshutdown,linearcurrentlimitationandovervoltageclampprotect | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | ||
fullyautoprotectedPowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | ||
OMNIFETIIfullyautoprotectedPowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | ||
OMNIFETIIfullyautoprotectedPowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | ||
OMNIFETIIfullyautoprotectedPowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | ||
OMNIFETIIfullyautoprotectedPowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | ||
OMNIFETIIfullyautoprotectedPowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | ||
fullyautoprotectedPowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | ||
OMNIFETIIfullyautoprotectedPowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | ||
??MNIFETII??FULLYAUTOPROTECTEDPOWERMOSFET Description TheVND1NV04,VNN1NV04,VNS1NV04aremonolithicdevicesdesignedinSTMicroelectronicsVIPowerM0-3Technology,intendedforreplacementofstandardPowerMOSFETsfromDCupto50KHzapplications. Builtinthermalshutdown,linearcurrentlimitationandovervoltageclampprotect | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | ||
??MNIFETII??FULLYAUTOPROTECTEDPOWERMOSFET DESCRIPTION TheVNS1NV04DisadeviceformedbytwomonolithicOMNIFETIIchipshousedinastandardSO-8package.TheOMNIFETIIaredesignedinSTMicroelectronicsVIPowerM0-3Technology:theyareintendedforreplacementofstandardPowerMOSFETSfromDCupto50KHzapplications. ■LINEA | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | ||
??MNIFETII??FULLYAUTOPROTECTEDPOWERMOSFET DESCRIPTION TheVNS1NV04DisadeviceformedbytwomonolithicOMNIFETIIchipshousedinastandardSO-8package.TheOMNIFETIIaredesignedinSTMicroelectronicsVIPowerM0-3Technology:theyareintendedforreplacementofstandardPowerMOSFETSfromDCupto50KHzapplications. ■LINEA | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | ||
??MNIFETII??FULLYAUTOPROTECTEDPOWERMOSFET DESCRIPTION TheVNS1NV04DisadeviceformedbytwomonolithicOMNIFETIIchipshousedinastandardSO-8package.TheOMNIFETIIaredesignedinSTMicroelectronicsVIPowerM0-3Technology:theyareintendedforreplacementofstandardPowerMOSFETSfromDCupto50KHzapplications. ■LINEA | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | ||
OMNIFETIIfullyautoprotectedPowerMOSFET Description TheVNS1NV04DP-EisadeviceformedbytwomonolithicOMNIFETIIchipshousedinastandardSO-8package.TheOMNIFETIIaredesignedinSTMicroelectronicsVIPower?M0-3technology:theyareintendedforreplacementofstandardPowerMOSFETsfromDCupto50KHzapplications.Builtin | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS |
產(chǎn)品屬性
- 產(chǎn)品編號：
VNS1NV04DTR-E
- 制造商：
STMicroelectronics
- 類別：
集成電路（IC） > 配電開關(guān)，負載驅(qū)動器
- 系列：
OMNIFET II?, VIPower?
- 包裝：
管件
- 開關(guān)類型：
通用
- 輸出數(shù)：
2
- 比率 - 輸入：
1：1
- 輸出配置：
低端
- 輸出類型：
N 通道
- 接口：
開/關(guān)
- 電壓 - 負載：
36V（最大）
- 電壓 - 供電 (Vcc/Vdd)：
不需要
- 電流 - 輸出（最大值）：
1.7A
- 導(dǎo)通電阻（典型值）：
250 毫歐（最大）
- 輸入類型：
非反相
- 故障保護：
限流（固定），超溫，過壓
- 工作溫度：
-40°C ~ 150°C（TJ）
- 安裝類型：
表面貼裝型
- 供應(yīng)商器件封裝：
8-SOIC
- 封裝/外殼：
8-SOIC（0.154"，3.90mm 寬）
- 描述：
IC PWR DRIVER N-CHANNEL 1
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ST |
24+ |
N/P |
16500 |
代理授權(quán)直銷,原裝現(xiàn)貨,假一罰十,長期穩(wěn)定供應(yīng) |
詢價 | ||
ST |
21+ |
SOP8 |
1516 |
十年信譽,只做原裝,有掛就有現(xiàn)貨! |
詢價 | ||
ST |
19+/20+ |
SOP-8 |
6075 |
詢價 | |||
ST/意法 |
22+ |
SOP-8 |
9800 |
只做原裝正品假一賠十!正規(guī)渠道訂貨! |
詢價 | ||
ST |
23+ |
15000 |
工廠庫存 實單可談 |
詢價 | |||
ST/意法 |
24+ |
SOP-8 |
16889 |
原裝優(yōu)勢公司現(xiàn)貨! |
詢價 | ||
ST |
23+ |
NA |
10000 |
原裝現(xiàn)貨,實單價格可談 |
詢價 | ||
ST/意法 |
23+ |
SOP-8 |
360000 |
專業(yè)供應(yīng)MOS/LDO/晶體管/有大量價格低 |
詢價 | ||
STM |
24+ |
5000 |
詢價 | ||||
ST |
16+ |
SOP8 |
8000 |
原裝現(xiàn)貨請來電咨詢 |
詢價 |
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相關(guān)庫存
更多- VNS1NV04P-E
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- VNYI3
- VNZ-005
- VNZ-03
- VNZ05-ORING
- VO0600T
- VO0601T
- VO0611T
- VO0631T
- VO0661T
- VO-100A
- VO1263AACTR
- VO1400AEFT2
