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71V124SA10PHG

3.3V CMOS Static RAM1 Meg (128K x 8-Bit) Center Power & Ground Pinout

Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V124SA10PHG8

3.3V CMOS Static RAM1 Meg (128K x 8-Bit) Center Power & Ground Pinout

Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V124SA10PHGI

3.3V CMOS Static RAM1 Meg (128K x 8-Bit) Center Power & Ground Pinout

Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V124SA10PHGI8

3.3V CMOS Static RAM1 Meg (128K x 8-Bit) Center Power & Ground Pinout

Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V124SA10PHG8

包裝：管件 封裝/外殼：32-SOIC（0.400"，10.16mm 寬） 類別：集成電路（IC） 存儲器 描述：IC SRAM 1MBIT PARALLEL 32TSOP II

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V124SA10PHGI

包裝：管件 封裝/外殼：32-SOIC（0.400"，10.16mm 寬） 類別：集成電路（IC） 存儲器 描述：IC SRAM 1MBIT PARALLEL 32TSOP II

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V124SA10PHGI8

包裝：管件 封裝/外殼：32-SOIC（0.400"，10.16mm 寬） 類別：集成電路（IC） 存儲器 描述：IC SRAM 1MBIT PARALLEL 32TSOP II

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V124SA10TYG

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V124SA10YG

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

IDT71V124SA10

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor

IDT

Integrated Device Technology, Inc.

IDT71V124SA10PH

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor

IDT

Integrated Device Technology, Inc.

IDT71V124SA10PHI

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor

IDT

Integrated Device Technology, Inc.

IDT71V124SA10TY

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor

IDT

Integrated Device Technology, Inc.

IDT71V124SA10TYI

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor

IDT

Integrated Device Technology, Inc.

IDT71V124SA10Y

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor

IDT

Integrated Device Technology, Inc.

IDT71V124SA10YI

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor

IDT

Integrated Device Technology, Inc.

產(chǎn)品屬性

  • 產(chǎn)品編號：

    71V124SA10PHG8

  • 制造商：

    Renesas Electronics America Inc

  • 類別：

    集成電路（IC） > 存儲器

  • 包裝：

    管件

  • 存儲器類型：

    易失

  • 存儲器格式：

    SRAM

  • 技術(shù)：

    SRAM - 異步

  • 存儲容量：

    1Mb（128K x 8）

  • 存儲器接口：

    并聯(lián)

  • 寫周期時間 - 字，頁：

    10ns

  • 電壓 - 供電：

    3.15V ~ 3.6V

  • 工作溫度：

    0°C ~ 70°C（TA）

  • 安裝類型：

    表面貼裝型

  • 封裝/外殼：

    32-SOIC（0.400"，10.16mm 寬）

  • 供應(yīng)商器件封裝：

    32-TSOP II

  • 描述：

    IC SRAM 1MBIT PARALLEL 32TSOP II

供應(yīng)商型號品牌批號封裝庫存備注價格
IDT, Integrated Device Technol
21+
32-TSOP II
56200
一級代理/放心采購
 詢價
IDT
1931+
N/A
556
加我qq或微信，了解更多詳細信息,體驗一站式購物
 詢價
IDT
20+
SSOP-32
3854
就找我吧!--邀您體驗愉快問購元件!
 詢價
Renesas Electronics America In
21+
NA
11200
正品專賣,進口原裝深圳現(xiàn)貨
 詢價
Renesas
21+
25000
原廠原包 深圳現(xiàn)貨 主打品牌 假一賠百 可開票!
 詢價
RENESAS(瑞薩電子)
22+
NA
500000
萬三科技,秉承原裝,購芯無憂
 詢價
IDT
22+
NA
556
加我QQ或微信咨詢更多詳細信息,
 詢價
Integrated Device Technology
2022+
原廠原包裝
8600
全新原裝 支持表配單 中國著名電子元器件獨立分銷
 詢價
24+
N/A
70000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
 詢價
Renesas Electronics Corporatio
23+/24+
32-SOIC
8600
只供原裝進口公司現(xiàn)貨+可訂貨
 詢價
更多71V124SA10PH供應(yīng)商 更新時間2024-11-15 9:00:00

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