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DE275-102N06A

RF Power MOSFET

N-ChannelEnhancementMode LowQgandRg Highdv/dt NanosecondSwitching IdealforClassC,D,&EApplications Features ?IsolatedSubstrate ?highisolationvoltage(>2500V) ?excellentthermaltransfer ?Increasedtemperatureandpowercyclingcapability ?IXYSadvance

IXYS

IXYS Corporation

DE275-201N25A

RF Power MOSFET

N-ChannelEnhancementMode LowQgandRg Highdv/dt NanosecondSwitching IdealforClassC,D,&EApplications Features ?IsolatedSubstrate ?highisolationvoltage(>2500V) ?excellentthermaltransfer ?Increasedtemperatureandpowercyclingcapability ?

IXYS

IXYS Corporation

DE275-501N16

RF Power MOSFET

VDSS=500V ID25=16A RDS(on)=.5? PDHS=375W N-ChannelEnhancementMode AvalancheRated LowQ gandRg Highdv/dt NanosecondSwitching Features ?IsolatedSubstrate ?highisolationvoltage(>2500V) ?excellentthermaltransfer ?Increased

IXYS

IXYS Corporation

DE275-501N16A

RF Power MOSFET

VDSS=500V ID25=16A RDS(on)=.5? PDHS=375W N-ChannelEnhancementMode AvalancheRated LowQ gandRg Highdv/dt NanosecondSwitching Features ?IsolatedSubstrate ?highisolationvoltage(>2500V) ?excellentthermaltransfer ?Increased

IXYS

IXYS Corporation

DE275-501N16A

RF Power MOSFET

VDSS=500V ID25=16A RDS(on)=.5? PDHS=375W N-ChannelEnhancementMode AvalancheRated LowQ gandRg Highdv/dt NanosecondSwitching Features ?IsolatedSubstrate ?highisolationvoltage(>2500V) ?excellentthermaltransfer ?Increased

IXYS

IXYS Corporation

DE275X2-102N06A

RF Power MOSFET

[Directed-Energy] TheDE275X2-102N06AisamatchedpairofRFpowerMOSFETdevicesinacommonsourceconfiguration.Thedeviceisoptimizedforpush-pullorparalleloperationinRFgeneratorsandamplifiersatfrequenciesto>65MHz. ?CommonSourcePush-PullPair ?N-ChannelEnhancementMode

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未分類制造商

DE275X2-102N06A

RF Power MOSFET

TheDE275X2-102N06AisamatchedpairofRFpowerMOSFETdevicesinacommonsourceconfiguration.Thedeviceisoptimizedforpush-pullorparalleloperationinRFgeneratorsandamplifiersatfrequenciesto>65MHz. ?CommonSourcePush-PullPair ?N-ChannelEnhancementMode ?LowQgandRg

IXYS

IXYS Corporation

DE275X2-501N16

RF Power MOSFET

Features ?IsolatedSubstrate ?highisolationvoltage(>2500V) ?excellentthermaltransfer ?Increasedtemperatureandpowercyclingcapability ?IXYSadvancedlowQgprocess ?Lowgatechargeandcapacitances ?easiertodrive ?fasterswitching ?LowRDS(on) ?Ver

IXYS

IXYS Corporation

DE275X2-501N16A

RF Power MOSFET

TheDE275X2-501N16AisamatchedpairofRFpowerMOSFETdevicesinacommonsourceconfiguration.Thedeviceisoptimizedforpush-pullorparalleloperationinRFgeneratorsandamplifiersatfrequenciesto>65MHz. ?CommonSourcePush-PullPair ?N-ChannelEnhancementMode ?LowQgandRg

IXYS

IXYS Corporation

DE275X2-501N16A

RF Power MOSFET

Features ?IsolatedSubstrate ?highisolationvoltage(>2500V) ?excellentthermaltransfer ?Increasedtemperatureandpowercyclingcapability ?IXYSadvancedlowQgprocess ?Lowgatechargeandcapacitances ?easiertodrive ?fasterswitching ?LowRDS(on) ?Ver

IXYS

IXYS Corporation

產(chǎn)品屬性

  • 產(chǎn)品編號：

    DE275-102N06A

  • 制造商：

    IXYS-RF

  • 類別：

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - FET，MOSFET - 射頻

  • 系列：

    DE

  • 包裝：

    管件

  • 晶體管類型：

    N 通道

  • 額定電流（安培）：

    8A

  • 功率 - 輸出：

    590W

  • 封裝/外殼：

    6-SMD，扁平引線裸焊盤

  • 供應(yīng)商器件封裝：

    DE275

  • 描述：

    RF MOSFET N-CHANNEL DE275

供應(yīng)商型號品牌批號封裝庫存備注價格
IxysCorpo
18+ROHS全新原裝
TransMOSF
49684
專業(yè)元器件供應(yīng)鏈只做原裝長期供應(yīng)小批量支持
 詢價
IXYS/艾賽斯
23+
1688
房間現(xiàn)貨庫存:QQ:373621633
 詢價
Littelfuse/IXYS
23+
-
7814
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價
IXYS
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費送樣
 詢價
EDI
24+
NA
255
現(xiàn)貨供應(yīng)
 詢價
IXYS/艾賽斯
23+
1200
全新原裝現(xiàn)貨,價格優(yōu)勢
 詢價
EDI
23+
TO-59
8510
原裝正品代理渠道價格優(yōu)勢
 詢價
OTHER/其它
20+
SOP8
15000
OTHER/其它 集成電路、處理器、微控制器 DE275-102N06
 詢價
CF
2021++
SOP
10000
原裝正品價格優(yōu)勢!歡迎詢價QQ:385913858TEL:15
 詢價
IXYS
23+
3000
原裝正品假一罰百!可開增票!
 詢價
更多DE27供應(yīng)商 更新時間2025-2-5 13:40:00

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