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IRF6N60FP

POWERMOSFET

GENERALDESCRIPTION ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyeff

SUNTAC

Suntac Electronic Corp.

IRFIB6N60A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFIB6N60A

PowerMOSFET(Vdss=600V,Rds(on)max=0.75ohm,Id=5.5A)

Applications SwitchModePowerSupply(SMPS) UninterruptablePowerSupply Highspeedpowerswitching HighVoltageIsolation=2.5KVRMS? Benefits LowGateChargeQgresultsinSimpleDriveRequirement ImprovedGate,Avalancheanddynamicdv/dtRuggedness FullyCharacteri

IRF

International Rectifier

IRFIB6N60A

VishaySiliconix

FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?ComplianttoRoHSdirective2002/95/EC APPLICATIONS ?SwitchModePowerSupply(SMPS)

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFIB6N60APBF

HEXFETPowerMOSFET

Benefits LowGateChargeQgresultsinSimpleDriveRequirement ImprovedGate,Avalancheanddynamicdv/dtRuggedness FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent Applications SwitchModePowerSupply(SMPS) UninterruptablePowerSupply Highspeedpowe

IRF

International Rectifier

IRFIB6N60APBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

KF6N60D

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES ?VDSS(Min.)=600V,ID=5A

KECKEC CORPORATION

KEC株式會(huì)社

KF6N60P

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES ?VDSS(Min.)=600V,ID=6A

KECKEC CORPORATION

KEC株式會(huì)社

KSM6N60C

600VN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

KSMB6N60

Greendeviceavailable.

KERSEMI

Kersemi Electronic Co., Ltd.

詳細(xì)參數(shù)

  • 型號(hào):

    FQPF6N60C

  • 功能描述:

    MOSFET N-CH/600V/6A/QFET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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FAIRCHILD
23+
TO-220F
65400
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FAIRCHILD/仙童
24+
TO-220-3PF
3580
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FAIRCHILD
24+
TO-220F
9750
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onsemi(安森美)
23+
TO-220F
7828
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
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FSC
12+
TO220F
1000
原裝正品現(xiàn)貨庫存價(jià)優(yōu)
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FSC
23+
TO-220
9526
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仙童
05+
TO-220F
4000
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FAIRCHIL
2015+
TO-220F
12500
全新原裝,現(xiàn)貨庫存長期供應(yīng)
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FAIRCHIL
23+
TO-220F
6000
全新原裝現(xiàn)貨
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FSC
2020+
TO-220F
25
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更多FQPF6N60C供應(yīng)商 更新時(shí)間2025-3-15 14:10:00