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HC9210

包裝：散裝 類別：工業(yè)自動(dòng)化與控制 氣動(dòng)，液壓 - 導(dǎo)管，管道，管子，軟管 描述：6' HOSE W/CH-604 3/8\

ENERPAC PRODUCTION AUTOMATION

ENERPAC PRODUCTION AUTOMATION

ENERPAC PRODUCTION AUTOMATION

HDM9210

FrequencySynthesizer

SHOULDERShoulder

好達(dá)電子無(wú)錫市好達(dá)電子股份有限公司

HF9210

HERMETICALLYSEALEDRELAUY

HONGFAHongfa Technology

宏發(fā)電聲廈門宏發(fā)電聲股份有限公司

IRFD9210

PowerMOSFET(Vdss=-200V,Rds(on)=3.0ohm,Id=-0.40A)

DESCRIPTION TheHEXFETtechnologyisthekeytoInternationalRectifiersadvancedlineofpowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerHEXFETdesignarchieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. ?D

IRF

International Rectifier

IRFD9210

PowerMOSFET

DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignarchieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. The4pinDIP

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD9210

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Forautomaticinsertion ?Endstackable ?P-channel ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION ThepowerMOSFETstechnolo

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD9210PBF

PowerMOSFET

DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignarchieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. The4pinDIP

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD9210PBF

HEXFETPowerMOSFET

DESCRIPTION TheHEXFETtechnologyisthekeytoInternationalRectifiersadvancedlineofpowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerHEXFETdesignarchieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. ?D

IRF

International Rectifier

IRFD9210PBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFE9210

REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORSSURFACEMOUNT(LCC-18)

REPETITIVEAVALANCHEANDdv/dtRATEDHEXFET?TRANSISTORSSURFACEMOUNT(LCC-18) Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesignersth

IRF

International Rectifier

IRFE9210

SimpleDriveRequirements

IRF

International Rectifier

IRFF9210

HEXFETTRANSISTORSTHRU-HOLE(TO-205AF)

ProductSummary TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance. TheHEXFETtr

IRF

International Rectifier

IRFF9210

P-ChannelMOSFETinaHermeticallysealedTO39

SEME-LAB

Seme LAB

IRFF9210

SimpleDriveRequirements

IRF

International Rectifier

IRFR9210

PowerMOSFET(Vdss=-200V,Rds(on)=3.0ohm,Id=-1.9A)

DESCRIPTION TheHEXFETtechnologyisthekeytoInternationalRectifiersadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingoftheHEXFETdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheD-

IRF

International Rectifier

IRFR9210

PowerMOSFET

DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAK

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR9210

PowerMOSFET

DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR9210

PowerMOSFET

DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR9210

PowerMOSFET

DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR9210

PowerMOSFET

DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP

KERSEMI

Kersemi Electronic Co., Ltd.

產(chǎn)品屬性

  • 產(chǎn)品編號(hào)：

    HC9210

  • 制造商：

    ENERPAC PRODUCTION AUTOMATION

  • 類別：

    工業(yè)自動(dòng)化與控制 > 氣動(dòng)，液壓 - 導(dǎo)管，管道，管子，軟管

  • 系列：

    H900

  • 包裝：

    散裝

  • 類型：

    軟管

  • 內(nèi)徑：

    0.250"（6.35mm）

  • 材料：

    橡膠

  • 長(zhǎng)度：

    10.0' (3.0m)

  • 特性：

    高負(fù)載

  • 工作壓力：

    9993PSI (689 bar)

  • 描述：

    6' HOSE W/CH-604 3/8\

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
ADI/亞德諾
20+
CDIP
8596
原廠代理渠道,每一顆芯片都可追溯原廠；
 詢價(jià)
ADI/亞德諾
QQ咨詢
CDIP
107
全新原裝 研究所指定供貨商
 詢價(jià)
HC/恒成微
22+
SOP-8
30000
公司正品原裝現(xiàn)貨,專營(yíng)HC/恒成微
 詢價(jià)
恒成微
23+
SOP-8
45000
恒成微全系列供應(yīng),量大價(jià)優(yōu)
 詢價(jià)
恒成微
23+
SOP-8
25000
專業(yè)配單,原裝正品假一罰十,代理渠道價(jià)格優(yōu)
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Coiltronics
23+
SMD
6680
全新原裝優(yōu)勢(shì)
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CooperInstruments&System
21+
SMD
12588
原裝正品,大量庫(kù)存
 詢價(jià)
COOPER
1950+
98552
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價(jià)
Coiltronics
2022+
1
全新原裝 貨期兩周
 詢價(jià)
EATON
2021+
SMD
100500
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
 詢價(jià)
更多HC9210供應(yīng)商 更新時(shí)間2025-1-14 16:12:00

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