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HGTG34N100E2中文資料Intersil數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)
HGTG34N100E2規(guī)格書(shū)詳情
Description
The HGTG34N100E2 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25°C and +150°C.
Features
? 34A, 1000V
? Latch Free Operation
? Typical Fall Time - 710ns
? High Input Impedance
? Low Conduction Loss
產(chǎn)品屬性
- 型號(hào):
HGTG34N100E2
- 制造商:
Rochester Electronics LLC
- 功能描述:
- Bulk
- 制造商:
Harris Corporation
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
Fairchild |
23+ |
TO-3P |
7750 |
全新原裝優(yōu)勢(shì) |
詢價(jià) | ||
仙童 |
24+ |
TO220 |
5000 |
全現(xiàn)原裝公司現(xiàn)貨 |
詢價(jià) | ||
FAIRCHIL |
24+ |
TO-247 |
16800 |
絕對(duì)原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢(shì)! |
詢價(jià) | ||
FAIRCHILD/仙童 |
20+ |
TO247 |
32970 |
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開(kāi)原型號(hào)增稅票 |
詢價(jià) | ||
ON/安森美 |
21+ |
SMD |
30000 |
百域芯優(yōu)勢(shì) 實(shí)單必成 可開(kāi)13點(diǎn)增值稅 |
詢價(jià) | ||
FAIRCHILD/仙童 |
21+ |
TO-220 |
6000 |
原裝正品 |
詢價(jià) | ||
FAIRCHILD |
23+ |
TO-247 |
9526 |
詢價(jià) | |||
24+ |
N/A |
62000 |
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇 |
詢價(jià) | |||
FairchildSemiconductor |
18+ |
NA |
3029 |
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng) |
詢價(jià) | ||
FAIRCHILD/仙童 |
23+ |
NA/ |
12388 |
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開(kāi)增值稅票 |
詢價(jià) |