首頁 >HY57V161610E>規(guī)格書列表
零件編號(hào) | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
HY57V161610E | 2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16. FEATURES ?Single3.0Vto3.6Vpowersupply ?All | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | |
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16. FEATURES ?Single3.0Vto3.6Vpowersupply ?All | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16. FEATURES ?Single3.0Vto3.6Vpowersupply | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16. FEATURES ?Single3.0Vto3.6Vpowersupply ?All | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16. FEATURES ?Single3.0Vto3.6Vpowersupply | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16. FEATURES ?Single3.0Vto3.6Vpowersupply ?All | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16. FEATURES ?Single3.0Vto3.6Vpowersupply ?All | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16. FEATURES ?Single3.0Vto3.6Vpowersupply | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16. FEATURES ?Single3.0Vto3.6Vpowersupply | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16. FEATURES ?Single3.0Vto3.6Vpowersupply ?All | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16. FEATURES ?Single3.0Vto3.6Vpowersupply | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16. FEATURES ?Single3.0Vto3.6Vpowersupply ?All | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16. FEATURES ?Single3.0Vto3.6Vpowersupply | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16. FEATURES ?Single3.0Vto3.6Vpowersupply ?All | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16. FEATURES ?Single3.0Vto3.6Vpowersupply | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16. FEATURES ?Single3.0Vto3.6Vpowersupply | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16.HY57V161610Eisofferingfullysynchronousoperati | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix |
詳細(xì)參數(shù)
- 型號(hào):
HY57V161610E
- 制造商:
HYNIX
- 制造商全稱:
Hynix Semiconductor
- 功能描述:
2 Banks x 512K x 16 Bit Synchronous DRAM
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
HYNIX |
18+ |
TSOP |
85600 |
保證進(jìn)口原裝可開17%增值稅發(fā)票 |
詢價(jià) | ||
Hynix |
23+ |
500 |
全新原裝真實(shí)庫存,一周 |
詢價(jià) | |||
HY |
24+ |
2560 |
絕對原裝!現(xiàn)貨熱賣! |
詢價(jià) | |||
HY |
06+ |
TSOP |
1000 |
全新原裝 絕對有貨 |
詢價(jià) | ||
HYNIX |
1215+ |
TSOP |
150000 |
全新原裝,絕對正品,公司大量現(xiàn)貨供應(yīng). |
詢價(jià) | ||
HYNIX |
17+ |
TSOP |
6200 |
100%原裝正品現(xiàn)貨 |
詢價(jià) | ||
HYNIX |
05+ |
2880 |
原裝正品現(xiàn)貨庫存價(jià)優(yōu) |
詢價(jià) | |||
HYNIX |
23+ |
TSOP |
5000 |
原裝正品,假一罰十 |
詢價(jià) | ||
HYNIX |
23+ |
SSOP |
9280 |
價(jià)格優(yōu)勢/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢 |
詢價(jià) | ||
1018+ |
13 |
全新原裝現(xiàn)貨 |
詢價(jià) |
相關(guān)規(guī)格書
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- HY57V281620ALT-SI
- HY57V281620AT-10
- HY57V281620AT-7
- HY57V281620AT-H
- HY57V281620AT-K
- HY57V281620AT-P
- HY57V281620AT-S
- HY57V281620BLT
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相關(guān)庫存
更多- HY57V161610ET-10I
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