首頁 >HY57V161610E>規(guī)格書列表

零件編號(hào)下載&訂購功能描述制造商&上傳企業(yè)LOGO

HY57V161610E

2 Banks x 512K x 16 Bit Synchronous DRAM

DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16. FEATURES ?Single3.0Vto3.6Vpowersupply ?All

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V161610ET-10

2 Banks x 512K x 16 Bit Synchronous DRAM

DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16. FEATURES ?Single3.0Vto3.6Vpowersupply ?All

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V161610ET-10I

2 Banks x 512K x 16 Bit Synchronous DRAM

DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16. FEATURES ?Single3.0Vto3.6Vpowersupply

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V161610ET-15

2 Banks x 512K x 16 Bit Synchronous DRAM

DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16. FEATURES ?Single3.0Vto3.6Vpowersupply ?All

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V161610ET-15I

2 Banks x 512K x 16 Bit Synchronous DRAM

DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16. FEATURES ?Single3.0Vto3.6Vpowersupply

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V161610ET-5

2 Banks x 512K x 16 Bit Synchronous DRAM

DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16. FEATURES ?Single3.0Vto3.6Vpowersupply ?All

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V161610ET-55

2 Banks x 512K x 16 Bit Synchronous DRAM

DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16. FEATURES ?Single3.0Vto3.6Vpowersupply ?All

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V161610ET-55I

2 Banks x 512K x 16 Bit Synchronous DRAM

DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16. FEATURES ?Single3.0Vto3.6Vpowersupply

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V161610ET-5I

2 Banks x 512K x 16 Bit Synchronous DRAM

DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16. FEATURES ?Single3.0Vto3.6Vpowersupply

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V161610ET-6

2 Banks x 512K x 16 Bit Synchronous DRAM

DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16. FEATURES ?Single3.0Vto3.6Vpowersupply ?All

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V161610ET-6I

2 Banks x 512K x 16 Bit Synchronous DRAM

DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16. FEATURES ?Single3.0Vto3.6Vpowersupply

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V161610ET-7

2 Banks x 512K x 16 Bit Synchronous DRAM

DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16. FEATURES ?Single3.0Vto3.6Vpowersupply ?All

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V161610ET-7I

2 Banks x 512K x 16 Bit Synchronous DRAM

DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16. FEATURES ?Single3.0Vto3.6Vpowersupply

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V161610ET-8

2 Banks x 512K x 16 Bit Synchronous DRAM

DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16. FEATURES ?Single3.0Vto3.6Vpowersupply ?All

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V161610ET-8I

2 Banks x 512K x 16 Bit Synchronous DRAM

DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16. FEATURES ?Single3.0Vto3.6Vpowersupply

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V161610ET-I

2 Banks x 512K x 16 Bit Synchronous DRAM

DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16. FEATURES ?Single3.0Vto3.6Vpowersupply

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V161610ETP-I

2 Banks x 512K x 16 Bit Synchronous DRAM

DESCRIPTION THEHynixHY57V161610Eisa16,777,216-bitsCMOSSynchronousDRAM,ideallysuitedforthemainmemoryandgraphicapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V161610Eisorganizedas2banksof524,288x16.HY57V161610Eisofferingfullysynchronousoperati

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào):

    HY57V161610E

  • 制造商:

    HYNIX

  • 制造商全稱:

    Hynix Semiconductor

  • 功能描述:

    2 Banks x 512K x 16 Bit Synchronous DRAM

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
HYNIX
18+
TSOP
85600
保證進(jìn)口原裝可開17%增值稅發(fā)票
詢價(jià)
Hynix
23+
500
全新原裝真實(shí)庫存,一周
詢價(jià)
HY
24+
2560
絕對原裝!現(xiàn)貨熱賣!
詢價(jià)
HY
06+
TSOP
1000
全新原裝 絕對有貨
詢價(jià)
HYNIX
1215+
TSOP
150000
全新原裝,絕對正品,公司大量現(xiàn)貨供應(yīng).
詢價(jià)
HYNIX
17+
TSOP
6200
100%原裝正品現(xiàn)貨
詢價(jià)
HYNIX
05+
2880
原裝正品現(xiàn)貨庫存價(jià)優(yōu)
詢價(jià)
HYNIX
23+
TSOP
5000
原裝正品,假一罰十
詢價(jià)
HYNIX
23+
SSOP
9280
價(jià)格優(yōu)勢/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢
詢價(jià)
1018+
13
全新原裝現(xiàn)貨
詢價(jià)
更多HY57V161610E供應(yīng)商 更新時(shí)間2025-1-3 10:39:00