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零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
IDT71V35761S	文件：282.83 Kbytes Page：22 Pages	128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec	IDT Integrated Device Technology, Inc.	IDT
IDT71V35761S	文件：972.44 Kbytes Page：21 Pages	3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect	IDT Integrated Device Technology, Inc.	IDT
IDT71V35761S166BG	文件：282.83 Kbytes Page：22 Pages	128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec	IDT Integrated Device Technology, Inc.	IDT
IDT71V35761S166BGI	文件：282.83 Kbytes Page：22 Pages	128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec	IDT Integrated Device Technology, Inc.	IDT
IDT71V35761S166BQ	文件：282.83 Kbytes Page：22 Pages	128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec	IDT Integrated Device Technology, Inc.	IDT
IDT71V35761S166BQI	文件：282.83 Kbytes Page：22 Pages	128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec	IDT Integrated Device Technology, Inc.	IDT
IDT71V35761S166PF	文件：282.83 Kbytes Page：22 Pages	128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec	IDT Integrated Device Technology, Inc.	IDT
IDT71V35761S166PFI	文件：282.83 Kbytes Page：22 Pages	128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec	IDT Integrated Device Technology, Inc.	IDT
IDT71V35761S183BG	文件：282.83 Kbytes Page：22 Pages	128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec	IDT Integrated Device Technology, Inc.	IDT
IDT71V35761S183BGI	文件：282.83 Kbytes Page：22 Pages	128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec	IDT Integrated Device Technology, Inc.	IDT
IDT71V35761S183BQ	文件：282.83 Kbytes Page：22 Pages	128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec	IDT Integrated Device Technology, Inc.	IDT
IDT71V35761S183BQI	文件：282.83 Kbytes Page：22 Pages	128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec	IDT Integrated Device Technology, Inc.	IDT
IDT71V35761S183PF	文件：282.83 Kbytes Page：22 Pages	128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec	IDT Integrated Device Technology, Inc.	IDT
IDT71V35761S183PFI	文件：282.83 Kbytes Page：22 Pages	128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec	IDT Integrated Device Technology, Inc.	IDT
IDT71V35761S200BG	文件：282.83 Kbytes Page：22 Pages	128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec	IDT Integrated Device Technology, Inc.	IDT
IDT71V35761S200BGI	文件：282.83 Kbytes Page：22 Pages	128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec	IDT Integrated Device Technology, Inc.	IDT
IDT71V35761S200BQ	文件：282.83 Kbytes Page：22 Pages	128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec	IDT Integrated Device Technology, Inc.	IDT
IDT71V35761S200BQI	文件：282.83 Kbytes Page：22 Pages	128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec	IDT Integrated Device Technology, Inc.	IDT
IDT71V35761S200PF	文件：282.83 Kbytes Page：22 Pages	128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec	IDT Integrated Device Technology, Inc.	IDT
IDT71V35761S200PFI	文件：282.83 Kbytes Page：22 Pages	128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec	IDT Integrated Device Technology, Inc.	IDT

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詳細(xì)參數(shù)

型號(hào)：
IDT71V35761S
功能描述：
IC SRAM 4MBIT 166MHZ 119BGA
RoHS：
否
類別：
集成電路(IC) >> 存儲(chǔ)器
系列：
-
標(biāo)準(zhǔn)包裝：
2,000
系列：
MoBL® 格式 -
存儲(chǔ)器：
RAM
存儲(chǔ)器類型：
SRAM - 異步
存儲(chǔ)容量：
16M（2M x 8，1M x 16）
速度：
45ns
接口：
并聯(lián)
電源電壓：
2.2 V ~ 3.6 V
工作溫度：
-40°C ~ 85°C
封裝/外殼：
48-VFBGA
供應(yīng)商設(shè)備封裝：
48-VFBGA（6x8）
包裝：
帶卷(TR)

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市永貝爾科技有限公司	IDT71V35761S	IDT	23+	NA	19960	只做進(jìn)口原裝,終端工廠免費(fèi)送樣	詢價(jià)
深圳市勤思達(dá)科技有限公司	IDT71V35761S20	IDT	09+	BGA	5500	原裝無(wú)鉛,優(yōu)勢(shì)熱賣	詢價(jià)
深圳市星佑電子有限公司	IDT71V35761S183PFI	IDT	00/01+	QFP	64	全新原裝100真實(shí)現(xiàn)貨供應(yīng)	詢價(jià)
深圳市科恒偉業(yè)電子有限公司	IDT71V35761S166PFG	IDT	2016+	TQFP100	5562	只做進(jìn)口原裝現(xiàn)貨!或訂貨!假一賠十!	詢價(jià)
深圳市一線半導(dǎo)體有限公司	IDT71V35761S166PF	IDT	24+	QFP	503		詢價(jià)
深圳市凌旭科技有限公司	IDT71V35761S166PF	IDT	2016+	TQFP-100	8880	只做原裝,假一罰十,公司可開(kāi)17%增值稅發(fā)票!	詢價(jià)
深圳市利加科技有限公司	IDT71V35761S200PF	IDT	16+	TQFP100	8800	進(jìn)口原裝大量現(xiàn)貨熱賣中	詢價(jià)
深圳市昌和盛利電子有限公司	IDT71V35761S183PFI8	IDT	23+	100TQFP	9526		詢價(jià)
深圳市毅創(chuàng)騰電子科技有限公司	IDT71V35761S166PF	IDT		QFP	254	正品原裝--自家現(xiàn)貨-實(shí)單可談	詢價(jià)
深圳市博浩通科技有限公司	IDT71V35761S200PFG	IDT	23+	100-TQFP	7750	全新原裝優(yōu)勢(shì)	詢價(jià)

更多IDT71V35761S供應(yīng)商更新時(shí)間2025-1-1 9:01:00

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