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IRF820

N-CHANNELPOWERMOSFETS

FEATURES ●LowerRDS(ON) ●Improvedinductiveruggedness ●Fastswitchingtimes ●Ruggedpolysilicongatecellstructure ●Lowerinputcapacitance ●Extendedsafeoperatingarea ●Improvedhightemperaturereliability

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRF820

N-CHANNEL500V-2.5ohm-2.5A-TO-220PowerMESH]MOSFET

DESCRIPTION ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAY?process.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources. ■TYPICALRDS(on)=2.5? ■EXTREMELYHIGHdv/dtCAPABILITY ■100AVALAN

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

IRF820

N-CHANNELEnhancement-ModeSiliconGateTMOS

PowerFieldEffectTransistor N-ChannelEnhancement-ModeSiliconGateTMOS TMOSPOWERFETs2and2.5AMPERESrDS(on)=3OHM450and500VOLTS rDS(on)=4OHM450VOLTS

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

IRF820

N-ChannelPowerMOSFETs,3.0A,450V/500V

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF820

PowerMOSFET(Vdss=500V,Rds(on)=3.0ohm,Id=2.5A)

DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?FastSwitching ?EaseofParalleling ?

IRF

International Rectifier

IRF820

2.5A,500V,3.000Ohm,N-ChannelPowerMOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

Intersil

Intersil Corporation

IRF820

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforcommercial-industrialapplicationsatpowerdissipationlev

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF820

POWERMOSFET

GENERALDESCRIPTION ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyeff

SUNTAC

Suntac Electronic Corp.

IRF820

iscN-ChannelMOSFETTransistor

DESCRIPTION ·DrainCurrent–ID=2.5A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3Ω(Max) ·FastSwitchingSpeed ·SimpleDriveRequirements APPLICATIONS ·Highcurrent,highspeedswitching ·Swithmodepowersupplies(smps) ·

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRF820

N-ChannelPowerMOSFETs

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
24+
TO263-2.5
1000
詢價(jià)
IOR
10+
TO263
7800
全新原裝正品,現(xiàn)貨銷售
 詢價(jià)
IR
24+
TO263-2.5
2000
全新進(jìn)口原裝現(xiàn)貨熱賣(mài)!
 詢價(jià)
IR
22+
TO263-2.5
6000
終端可免費(fèi)供樣,支持BOM配單
 詢價(jià)
IOR
2025+
TO263
3645
全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售
 詢價(jià)
IR
23+
TO263-2.5
8000
只做原裝現(xiàn)貨
 詢價(jià)
IR
23+
TO263-2.5
7000
詢價(jià)
IR
23+
SOP-8
10000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
 詢價(jià)
N/A
23+
80000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
IR
23+
SOT-223
9960
價(jià)格優(yōu)勢(shì)/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來(lái)電查詢
 詢價(jià)
更多IR820E供應(yīng)商 更新時(shí)間2025-3-9 16:30:00

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