零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.59V,@Vge=15V,Ic=17A) Features ?Fast:Optimizedformediumoperating frequencies(1-5kHzinhardswitching,>20 kHzinresonantmode). ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IGBTco-packagedwithHEXFREDTMultrafast, ultra-s | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.21V,@Vge=15V,Ic=16A) Features ?Highshortcircuitratingoptimizedformotorcontrol, tsc=10μs,@360VVCE(start),TJ=125°C, VGE=15V ?Combineslowconductionlosseswithhigh switchingspeed ?Latestgenerationdesignprovidestighterparameter distributionandhigherefficiencythanprevious | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.59V,@Vge=15V,Ic=17A) Features ?Fast:optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IndustrystandardTO-220ABpackage Benefits ?Generation4IGBTsoff | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.59V,@Vge=15V,Ic=17A) Features ?Fast:optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IndustrystandardTO-220ABpackage Benefits ?Generation4IGBTsoff | IRF International Rectifier | IRF | ||
FitRate/EquivalentDeviceHours | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR | IRF International Rectifier | IRF | ||
FitRate/EquivalentDeviceHours | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.59V,@Vge=15V,Ic=17A) Features ?Fast:Optimizedformediumoperating frequencies(1-5kHzinhardswitching,>20 kHzinresonantmode). ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IGBTco-packagedwithHEXFREDTMultrafast, ultra-s | IRF International Rectifier | IRF | ||
FastCoPack1GBT(VCES=600V,VCE(on)typ.=1.59V,VGE=15V,IC=17A) FastCoPackIGBT INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features ?Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythan | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHHYPERFASTDIODE Features ?Fast:Optimizedformediumoperatingfrequencies (1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3. ?IGBTco-packagedwithHyperfastFREDdiodesforultral | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHHYPERFASTDIODE Features ?Fast:Optimizedformediumoperatingfrequencies (1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighter. parameterdistributionandhigherefficiencythan Generation3. ?IGBTco-packagedwithHyperfastFREDdiodesforultra | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHHYPERFASTDIODE | IRF International Rectifier | IRF | ||
FastSpeedIGBTINSULATEDGATEBIPOLARTRANSISTOR Features ?Fast:optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IndustrystandardTO-220ABpackage ?Lead-Free Benefits ?Generatio | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR | IRF International Rectifier | IRF | ||
FitRate/EquivalentDeviceHours | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.21V,@Vge=15V,Ic=16A) Features ?Highshortcircuitratingoptimizedformotorcontrol, tsc=10μs,@360VVCE(start),TJ=125°C, VGE=15V ?Combineslowconductionlosseswithhigh switchingspeed ?Latestgenerationdesignprovidestighterparameter distributionandhigherefficiencythanprevious | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=2.21V,@Vge=15V,Ic=16A) ShortCircuitRatedUltraFastIGBT Features ?Highshortcircuitratingoptimizedformotorcontrol,tsc=10μs,@360VVCE(start),TJ=125°C,VGE=15V ?Combineslowconductionlosseswithhighswitchingspeed ?tighterparameterdistributionandhigherefficiencythanpreviousgenerations | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE | IRF International Rectifier | IRF |
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
IR |
23+ |
TO |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
IR |
23+ |
TO |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
IR |
21+ |
TO |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
IR |
2022 |
TO |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價(jià) | ||
ADI |
2022+ |
LGA48 |
6000 |
一級代理/分銷渠道價(jià)格優(yōu)勢 十年芯程一路只做原裝正品 |
詢價(jià) | ||
IR |
22+ |
TO |
6000 |
終端可免費(fèi)供樣,支持BOM配單 |
詢價(jià) | ||
IR |
23+ |
NA/ |
38 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價(jià) | ||
IR |
23+ |
TO |
8000 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
IR |
23+ |
TO |
7000 |
詢價(jià) | |||
IR |
23+ |
TO |
10000 |
原裝正品現(xiàn)貨 |
詢價(jià) |
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