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IRG4BC30

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.59V,@Vge=15V,Ic=17A)

Features ?Fast:Optimizedformediumoperating frequencies(1-5kHzinhardswitching,>20 kHzinresonantmode). ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IGBTco-packagedwithHEXFREDTMultrafast, ultra-s

IRF

International Rectifier

IRG4BC30

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.21V,@Vge=15V,Ic=16A)

Features ?Highshortcircuitratingoptimizedformotorcontrol, tsc=10μs,@360VVCE(start),TJ=125°C, VGE=15V ?Combineslowconductionlosseswithhigh switchingspeed ?Latestgenerationdesignprovidestighterparameter distributionandhigherefficiencythanprevious

IRF

International Rectifier

IRG4BC30

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.59V,@Vge=15V,Ic=17A)

Features ?Fast:optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IndustrystandardTO-220ABpackage Benefits ?Generation4IGBTsoff

IRF

International Rectifier

IRG4BC30F

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.59V,@Vge=15V,Ic=17A)

Features ?Fast:optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IndustrystandardTO-220ABpackage Benefits ?Generation4IGBTsoff

IRF

International Rectifier

IRG4BC30F

FitRate/EquivalentDeviceHours

IRF

International Rectifier

IRG4BC30F

INSULATEDGATEBIPOLARTRANSISTOR

IRF

International Rectifier

IRG4BC30FD

FitRate/EquivalentDeviceHours

IRF

International Rectifier

IRG4BC30FD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.59V,@Vge=15V,Ic=17A)

Features ?Fast:Optimizedformediumoperating frequencies(1-5kHzinhardswitching,>20 kHzinresonantmode). ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IGBTco-packagedwithHEXFREDTMultrafast, ultra-s

IRF

International Rectifier

IRG4BC30FDPBF

FastCoPack1GBT(VCES=600V,VCE(on)typ.=1.59V,VGE=15V,IC=17A)

FastCoPackIGBT INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features ?Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythan

IRF

International Rectifier

IRG4BC30FDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRF

International Rectifier

IRG4BC30FD-S

INSULATEDGATEBIPOLARTRANSISTORWITHHYPERFASTDIODE

Features ?Fast:Optimizedformediumoperatingfrequencies (1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3. ?IGBTco-packagedwithHyperfastFREDdiodesforultral

IRF

International Rectifier

IRG4BC30FD-SPBF

INSULATEDGATEBIPOLARTRANSISTORWITHHYPERFASTDIODE

Features ?Fast:Optimizedformediumoperatingfrequencies (1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighter. parameterdistributionandhigherefficiencythan Generation3. ?IGBTco-packagedwithHyperfastFREDdiodesforultra

IRF

International Rectifier

IRG4BC30FD-SPBF

INSULATEDGATEBIPOLARTRANSISTORWITHHYPERFASTDIODE

IRF

International Rectifier

IRG4BC30FPBF

FastSpeedIGBTINSULATEDGATEBIPOLARTRANSISTOR

Features ?Fast:optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IndustrystandardTO-220ABpackage ?Lead-Free Benefits ?Generatio

IRF

International Rectifier

IRG4BC30FPBF

INSULATEDGATEBIPOLARTRANSISTOR

IRF

International Rectifier

IRG4BC30F-STRLP

INSULATEDGATEBIPOLARTRANSISTOR

IRF

International Rectifier

IRG4BC30K

FitRate/EquivalentDeviceHours

IRF

International Rectifier

IRG4BC30K

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.21V,@Vge=15V,Ic=16A)

Features ?Highshortcircuitratingoptimizedformotorcontrol, tsc=10μs,@360VVCE(start),TJ=125°C, VGE=15V ?Combineslowconductionlosseswithhigh switchingspeed ?Latestgenerationdesignprovidestighterparameter distributionandhigherefficiencythanprevious

IRF

International Rectifier

IRG4BC30KD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=2.21V,@Vge=15V,Ic=16A)

ShortCircuitRatedUltraFastIGBT Features ?Highshortcircuitratingoptimizedformotorcontrol,tsc=10μs,@360VVCE(start),TJ=125°C,VGE=15V ?Combineslowconductionlosseswithhighswitchingspeed ?tighterparameterdistributionandhigherefficiencythanpreviousgenerations

IRF

International Rectifier

IRG4BC30KDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRF

International Rectifier

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
IR
23+
TO
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)
IR
23+
TO
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)
IR
21+
TO
10000
原裝現(xiàn)貨假一罰十
詢價(jià)
IR
2022
TO
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
詢價(jià)
ADI
2022+
LGA48
6000
一級代理/分銷渠道價(jià)格優(yōu)勢 十年芯程一路只做原裝正品
詢價(jià)
IR
22+
TO
6000
終端可免費(fèi)供樣,支持BOM配單
詢價(jià)
IR
23+
NA/
38
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
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IR
23+
TO
8000
專注配單,只做原裝進(jìn)口現(xiàn)貨
詢價(jià)
IR
23+
TO
7000
詢價(jià)
IR
23+
TO
10000
原裝正品現(xiàn)貨
詢價(jià)
更多IRC4BC30U供應(yīng)商 更新時(shí)間2025-1-5 13:00:00