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IRF1010ES

PowerMOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A??

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr

IRF

International Rectifier

IRF1010ES

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF1010ESPBF

HEXFETPowerMOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr

IRF

International Rectifier

IRF1010ESPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF1010EZ

AUTOMOTIVEMOSFET

Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi

IRF

International Rectifier

IRF1010EZ

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF1010EZ

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF1010EZL

AUTOMOTIVEMOSFET

Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi

IRF

International Rectifier

IRF1010EZLPBF

AUTOMOTIVEMOSFET

Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi

IRF

International Rectifier

IRF1010EZLPBF

AdvancedProcessTechnology

Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi

IRF

International Rectifier

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
IR
2023+原裝正品現(xiàn)貨
TO-220
9800
AI智能識(shí)別、工業(yè)、汽車、醫(yī)療方案LPC批量及配套一站
 詢價(jià)
IR
22+
TO-220
8900
英瑞芯只做原裝正品!!!
 詢價(jià)
IR
23+
TO-220
9990
原裝正品，支持實(shí)單
 詢價(jià)
IR
2023+
TO-220
1013
專注全新正品,優(yōu)勢(shì)現(xiàn)貨供應(yīng)
 詢價(jià)
IR
22+
TO-220
6000
終端可免費(fèi)供樣,支持BOM配單
 詢價(jià)
INFINEON/英飛凌
23+
TO-220
89630
當(dāng)天發(fā)貨全新原裝現(xiàn)貨
 詢價(jià)
IR
23+
TO-220
8000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
IR
23+
TO-220
8000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
IR
23+
TO-220
7000
詢價(jià)
IR
2223+
TO-220
26800
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)
 詢價(jià)
更多IRF1010E-PBF-CN供應(yīng)商 更新時(shí)間2024-4-11 18:15:00

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