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IRF1010ES

PowerMOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A??

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr

IRF

International Rectifier

IRF1010ES

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF1010ESPBF

HEXFETPowerMOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr

IRF

International Rectifier

IRF1010ESPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF1010EZ

AUTOMOTIVEMOSFET

Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi

IRF

International Rectifier

IRF1010EZ

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF1010EZ

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF1010EZL

AUTOMOTIVEMOSFET

Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi

IRF

International Rectifier

IRF1010EZLPBF

AUTOMOTIVEMOSFET

Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi

IRF

International Rectifier

IRF1010EZLPBF

AdvancedProcessTechnology

Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi

IRF

International Rectifier

供應商型號品牌批號封裝庫存備注價格
IR
22+
TO-220
8900
英瑞芯只做原裝正品!!!
 詢價
IR
22+
TO-220
18000
原裝正品
 詢價
IR
2023+
TO-220
5000
專注全新正品,優(yōu)勢現(xiàn)貨供應
 詢價
IR
22+
TO-220
6000
終端可免費供樣,支持BOM配單
 詢價
INFINEON/英飛凌
23+
TO-220
89630
當天發(fā)貨全新原裝現(xiàn)貨
 詢價
IR
20+
TO-220
880000
明嘉萊只做原裝正品現(xiàn)貨
 詢價
IR
23+
TO-220
8000
專注配單,只做原裝進口現(xiàn)貨
 詢價
IR
23+
TO-220
8000
專注配單,只做原裝進口現(xiàn)貨
 詢價
IR
23+
TO-220
7000
詢價
IR
2223+
TO-220
26800
只做原裝正品假一賠十為客戶做到零風險
 詢價
更多IRF1010E-PBF供應商 更新時間2025-1-23 9:30:00

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