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IRF1010N

PowerMOSFET(Vdss=55V,Rds(on)=11mohm,Id=85A??

VDSS=55V RDS(on)=11m? ID=85A? Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesig

IRF

International Rectifier

IRF1010N

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF1010NL

PowerMOSFET(Vdss=55V,Rds(on)=11mohm,Id=85A??

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF1010NL

FullyAvalancheRated

Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleonresistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinter

KERSEMI

Kersemi Electronic Co., Ltd.

IRF1010NLPBF

HEXFET?PowerMOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF1010NLPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF1010NLPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF1010NPBF

HEXFETPowerMOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr

IRF

International Rectifier

IRF1010NPBF

AdvancedProcessTechnologyUltraLowOn-Resistance

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr

KERSEMI

Kersemi Electronic Co., Ltd.

IRF1010NPBF

AdvancedProcessTechnology

IRF

International Rectifier

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
IR
2022+
SOT263
1200
原廠代理 終端免費(fèi)提供樣品
 詢價(jià)
IR
23+
SOT263
6000
原裝正品，支持實(shí)單
 詢價(jià)
IR
22+
SOT263
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
 詢價(jià)
IR
23+
SOT263
8000
只做原裝現(xiàn)貨
 詢價(jià)
IR
23+
SOT263
7000
詢價(jià)
VBSEMI
24+
con
35960
查現(xiàn)貨到京北通宇商城
 詢價(jià)
IR
17+
TO-262
6200
詢價(jià)
IR
23+
TO-262
35890
詢價(jià)
IR
23+
TO-262
35000
專做原裝正品,假一罰百!
 詢價(jià)
IR
2021+
TO-262
100500
一級(jí)代理專營品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長期排單到貨
 詢價(jià)
更多IRF1010EZSTRRPBF供應(yīng)商 更新時(shí)間2025-1-20 14:02:00

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