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IRF640S

PowerMOSFET(Vdss=200V,Rds(on)=0.18ohm,Id=18A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationsoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcosteffectiveness. SurfaceMount(IRF640S) Low-profilethrough-hole(IRF640L) AvailableinTape&

IRF

International Rectifier

IRF640S

N-channelTrenchMOStransistor

GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistorusingTrenchtechnology,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications.

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

IRF640S

N-CHANNEL200V-0.150ohm-18ATO-263MESHOVERLAY]MOSFET

DESCRIPTION ThispowerMOSFETisdesignedusinghecompany’sconsolidatedstriplayout-basedMESHOVERLAY?process.Thistechnologymatchesandimprovestheperformancescomparedwith standardpartsfromvarioussources. ■TYPICALRDS(on)=0.150? ■EXTREMELYHIGHdv/dtCAPABILITY ■

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

IRF640S

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationsoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovidesthe

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF640S

PowerMOSFET

FEATURES ?Surfacemount ?Low-profilethrough-hole ?Availableintapeandreel ?DynamicdV/dtrating ?150°Coperatingtemperature ?Fastswitching ?Fullyavalancherated ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note? *Thisdatas

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF640S

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=18A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.18mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRF640SPBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationsoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovidesthe

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF640SPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF640STRL

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationsoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovidesthe

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF640STRLPBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationsoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovidesthe

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
1923+
TO-220
6896
原裝進(jìn)口現(xiàn)貨庫(kù)存專(zhuān)業(yè)工廠(chǎng)研究所配單供貨
 詢(xún)價(jià)
IR
22+
TO-220
6000
終端可免費(fèi)供樣,支持BOM配單
 詢(xún)價(jià)
IR
23+
TO-220
8000
只做原裝現(xiàn)貨
 詢(xún)價(jià)
IR
23+
TO-220
7000
詢(xún)價(jià)
VISHAY/威世
22+
TO-220
20000
深圳原裝現(xiàn)貨正品有單價(jià)格可談
 詢(xún)價(jià)
VISHAY/威世
23+
TO220
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢(xún)價(jià)
VISHAY/威世
2022+
TO-220AB
6600
只做原裝,假一罰十,長(zhǎng)期供貨。
 詢(xún)價(jià)
VISHAY/威世
2022
TO220
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢(xún)
 詢(xún)價(jià)
VISHAY/威世
22+
TO220
20000
硅原只售全新原裝,提供技術(shù)支持!
 詢(xún)價(jià)
VISHAY/威世
22+
TO-220
37500
只做原裝進(jìn)口現(xiàn)貨
 詢(xún)價(jià)
更多IRF640PBF-M供應(yīng)商 更新時(shí)間2025-2-7 14:30:00

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