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IRFBA32N50K

HEXFET? Power MOSFET

IRF

International Rectifier

IRFP32N50

PowerMOSFET(Vdss=500V,Rds(on)typ.=0.135ohm,Id=32A)

SMPSMOSFET Applications SwitchModePowerSupply(SMPS) UninterruptiblePowerSupply HighSpeedPowerSwitching HardSwitchedandHighFrequencyCircuits Benefits LowGateChargeQgresultsinSimpleDriveRequirement ImprovedGate,AvalancheandDynamicdv/dtRugg

IRF

International Rectifier

IRFP32N50K

PowerMOSFET(Vdss=500V,Rds(on)typ.=0.135ohm,Id=32A)

SMPSMOSFET Applications SwitchModePowerSupply(SMPS) UninterruptiblePowerSupply HighSpeedPowerSwitching HardSwitchedandHighFrequencyCircuits Benefits LowGateChargeQgresultsinSimpleDriveRequirement ImprovedGate,AvalancheandDynamicdv/dtRugg

IRF

International Rectifier

IRFP32N50K

HEXFETPowerMOSFET

IRF

International Rectifier

IRFP32N50K

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP32N50K

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP32N50K

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFP32N50K

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP32N50KPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP32N50KPBF

HEXFETPowerMOSFET(VDSS=500V,RDS(on)typ.=0.135廓,ID=32A)

SMPSMOSFET Applications SwitchModePowerSupply(SMPS) UninterruptiblePowerSupply HighSpeedPowerSwitching HardSwitchedandHighFrequencyCircuits Lead-Free Benefits LowGateChargeQgresultsinSimpleDriveRequirement ImprovedGate,AvalancheandDynam

IRF

International Rectifier

IRFP32N50KPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IXFH32N50

HiPerFETPowerMOSFETs

N-ChannelEnhancementModeHighdv/dt,Lowtrr,HDMOSTMFamily Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance-easytodriveandtoprotect ?Fastintrin

IXYS

IXYS Corporation

IXFH32N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=32A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.15Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXFH32N50Q

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=32A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.16Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXFH32N50Q

HiPerFET??PowerMOSFETsQ-Class

N-ChannelEnhancementModeAvalancheRated,LowQg,Highdv/dt Features ?IXYSadvancedlowQgprocess ?Lowgatechargeandcapacitances -easiertodrive -fasterswitching ?Internationalstandardpackages ?LowRDS(on) ?UnclampedInductiveSwitching(UIS)rated ?Moldingepox

IXYS

IXYS Corporation

IXFJ32N50Q

HiPerFETPowerMOSFETs

HiPerFET?PowerMOSFETsQ-Class N-ChannelEnhancementModeAvalancheRated Highdv/dt,Lowtrr,HDMOS?Family Features ?Lowprofile,highpowerpackage ?Longcreepandstrikedistances ?Easyup-gradepathforTO-220 designs ?LowRDS(on)lowQgprocess ?Ruggedpolysilicongatecel

IXYS

IXYS Corporation

IXFJ32N50Q

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=32A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.15Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXFK32N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=32A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.15Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXFK32N50Q

HiPerFETPowerMOSFETsQ-Class

N-ChannelEnhancementMode AvalancheRated,LowQg,Highdv/dt Features ●IXYSadvancedlowQgprocess ●Lowgatechargeandcapacitances -easiertodrive -fasterswitching ●Internationalstandardpackages ●LowRDS(on) ●UnclampedInductiveSwitching(UIS)rated ●Moldingepox

IXYS

IXYS Corporation

IXFK32N50Q

HiPerFETPowerMOSFETsQ-Class

N-ChannelEnhancementMode AvalancheRated,LowQg,Highdv/dt Features ●IXYSadvancedlowQgprocess ●Lowgatechargeandcapacitances -easiertodrive -fasterswitching ●Internationalstandardpackages ●LowRDS(on) ●UnclampedInductiveSwitching(UIS)rated ●Moldingepox

IXYS

IXYS Corporation

詳細(xì)參數(shù)

  • 型號(hào):

    IRFBA32N50K

  • 制造商:

    IRF

  • 制造商全稱:

    International Rectifier

  • 功能描述:

    HEXFET㈢ Power MOSFET

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價(jià)
IR
22+
TO220
6000
終端可免費(fèi)供樣,支持BOM配單
詢價(jià)
IR
23+
TO220
8000
只做原裝現(xiàn)貨
詢價(jià)
IR
23+
TO220
7000
詢價(jià)
IR
23+
Super-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)
IR
21+
Super-220
10000
原裝現(xiàn)貨假一罰十
詢價(jià)
IR
TO-273
68900
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!
詢價(jià)
IR/VISHAY
23+
TO-220
10000
公司只做原裝正品
詢價(jià)
IR/VISHAY
23+
TO-220
6000
原裝正品,支持實(shí)單
詢價(jià)
IR
22+
SOT-3766&NBS
4500
全新原裝品牌專營(yíng)
詢價(jià)
更多IRFBA32N50K供應(yīng)商 更新時(shí)間2024-11-6 10:47:00