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首頁(yè) >IRFI540C>規(guī)格書列表

零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
IRFI540G	文件：184.27 Kbytes Page：6 Pages	HEXFETPOWERMOSFET DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220Fullpakeliminatestheneedforadditionalinsulatinghardwareincommercial-industri	IRF International Rectifier	IRF
IRFI540G	文件：532.01 Kbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicat	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFI540G	文件：319.44 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor ?DESCRITION ?SwitchingVoltageRegulators ?FEATURES ?Lowdrain-sourceon-resistance:RDS(ON)=0.077?(MAX) ?Enhancementmode:Vth=2to4V(VDS=10V,ID=0.25mA) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
IRFI540G	文件：1.48447 Mbytes Page：8 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFI540G	文件：1.06707 Mbytes Page：7 Pages	SinktoLeadCreepageDistance=4.8mm DESCRIPTION TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplications.Themoldingcompoundusedprovidesahighisolationcapabilityandalowthermalresistancebetweenthetabandexternalheatsink.Thisisolationisequivalenttousinga1	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFI540G	文件：568.96 Kbytes Page：10 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFI540GPBF	文件：3.54107 Mbytes Page：7 Pages	HEXFETPowerMOSFET DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220Fullpakeliminatestheneedforadditionalinsulatinghardwareincommercial-industri	IRF International Rectifier	IRF
IRFI540GPBF	文件：532.01 Kbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicat	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFI540GPBF	文件：1.60547 Mbytes Page：7 Pages	N-Channel100-V(D-S)MOSFET FEATURES ?TrenchFET?PowerMOSFET ?175°CJunctionTemperature ?LowThermalResistancePackage ?100RgTested APPLICATIONS ?IsolatedDC/DCConverters	VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司	VBSEMI
IRFI540GPBF	文件：568.96 Kbytes Page：10 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFI540N	文件：131.56 Kbytes Page：8 Pages	PowerMOSFET(Vdss=100V,Rds(on)=0.052ohm,Id=20A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,	IRF International Rectifier	IRF
IRFI540NPBF	文件：258.72 Kbytes Page：8 Pages	HEXFETPowerMOSFET	IRF International Rectifier	IRF
IRFI540NPBF	文件：505.31 Kbytes Page：9 Pages	AdvancedProcessTechnology Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IRFI540NPBF	文件：267.68 Kbytes Page：9 Pages	ADVANCEDPROCESSTECHNOLOGY	IRF International Rectifier	IRF
IRFM540	文件：625.11 Kbytes Page：3 Pages	N-CHANNELPOWERMOSFET	SEME-LAB Seme LAB	SEME-LAB
IRFNJ540	文件：42.95 Kbytes Page：2 Pages	N-CHANNELPOWERMOSFETFORHI-RELAPPLICATIONS	SEME-LAB Seme LAB	SEME-LAB
IRFR540Z	文件：371.01 Kbytes Page：11 Pages	HEXFET?PowerMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatest processingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeatures ofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeeda	IRF International Rectifier	IRF
IRFR540Z	文件：335.8 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
IRFR540Z	文件：1.24219 Mbytes Page：11 Pages	AdvancedProcessTechnology	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR540Z	文件：790.06 Kbytes Page：4 Pages	N-Ch100VFastSwitchingMOSFETs Features ?AdvancedTrenchMOSTechnology ?100EASGuaranteed ?ReliableandRugged ?GreenDeviceAvailable Applications ?SynchronousRectificationinSMPS ?HardSwitchingandHighSpeedCircuit ?DC/DCinTelecomsandInductrial	EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊歐翊歐半導(dǎo)體	EVVOSEMI

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供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市國(guó)宇半導(dǎo)體科技有限公司	IRFI540C	IR	23+	TO-220F	10000	公司只做原裝正品	詢價(jià)
深圳市河鋒鑫科技有限公司	IRFI540C	IR	22+	TO-220F	6000	十年配單,只做原裝	詢價(jià)
貿(mào)澤芯城（深圳）電子科技有限公司	IRFI540C	IR	23+	TO-TO-220F	12300	原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種	詢價(jià)
易創(chuàng)佳業(yè)科技（深圳）有限公司	IRFI540C	IR	23+	TO-220F	6000	原裝正品，支持實(shí)單	詢價(jià)
深圳市創(chuàng)新跡電子有限公司	IRFI540C	IR	22+	TO-220F	25000	只做原裝進(jìn)口現(xiàn)貨,專注配單	詢價(jià)
深圳市安富世紀(jì)電子有限公司	IRFI540C	IR	23+	TO-220F	8000	只做原裝現(xiàn)貨	詢價(jià)
天津市博通航睿技術(shù)有限公司	IRFI540C	IR	23+	TO-220F	7000		詢價(jià)
深圳市宏捷佳電子科技有限公司	IRFI540C	IR	24+	TO-TO-220F	12300	獨(dú)立分銷商公司只做原裝誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證	詢價(jià)
深圳市星佑電子有限公司	IRFI540G	IR	05+	TO-220	5000	全新原裝絕對(duì)有貨	詢價(jià)
深圳市恒創(chuàng)達(dá)實(shí)業(yè)有限公司	IRFI540G	IR	17+	TO-220F	6200		詢價(jià)

更多IRFI540C供應(yīng)商更新時(shí)間2025-1-11 14:30:00

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