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IRFL9014TR

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountingusingvaporphase,infrared,orwavesolderingtechniq

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFL9014TR

Marking：IRFL9014；Package：SOT-223；-60V P-Channel MOSFET

Description TheSOT-223packageisdesignedforsurface-mounting usingvaporphase,infrared,orwavesolderingtechniques. Itsuniquepackagedesignallowsforeasyautomaticpickand- placeaswithotherSOTorSOPpackagesbuthasthe addedadvantageofimprovedthermalperformancedueto

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

IRFL9014TRPBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountingusingvaporphase,infrared,orwavesolderingtechniq

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFL9014TRPBF

P-Channel 60-V (D-S) MOSFET

FEATURES ?TrenchFET?PowerMOSFET ?100UISTested APPLICATIONS ?LoadSwitch

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

IRFL9014TRPBFA

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFL9014TRPBF-BE3AB

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR9014

P-CHANNELPOWERMOSFETS

FEATURES ?LowerRDS(ON) ?Improvedinductiveruggedness ?Fastswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowerinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRFR9014

PowerMOSFET(Vdss=-60V,Rds(on)=0.50ohm,Id=-5.1A)

Description ThirdGenerationHESFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?SurfaceMount(IRFR9014) ?StraightL

IRF

International Rectifier

IRFR9014

HEXFETPowerMOSFET

Description ThirdGenerationHESFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?SurfaceMount(IRFR9014) ?StraightL

IRF

International Rectifier

IRFR9014

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號：

    IRFL9014TR

  • 功能描述：

    MOSFET P-Chan 60V 1.1 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
 詢價
IR
24+
SOT-223
11200
新進(jìn)庫存/原裝
 詢價
IR
05+
原廠原裝
30051
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
 詢價
IR
2016+
SOT223
6528
房間原裝進(jìn)口現(xiàn)貨假一賠十
 詢價
IR
2016+
SOT223
6000
公司只做原裝,假一罰十,可開17%增值稅發(fā)票!
 詢價
VISHAY
23+
SOT-223
20000
原裝正品,假一罰十
 詢價
IR
24+
原廠封裝
1627
原裝現(xiàn)貨假一罰十
 詢價
IOR
23+
TO223
46500
全新原裝
 詢價
IR
05+
SOT223
2900
全新原裝進(jìn)口自己庫存優(yōu)勢
 詢價
ir
24+
N/A
6980
原裝現(xiàn)貨,可開13%稅票
 詢價
更多IRFL9014TR供應(yīng)商 更新時間2025-2-4 13:00:00

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