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IRFL9110TR

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountusingvaporphase,infrared,orwavesolderingtechni

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFL9110TRPBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountusingvaporphase,infrared,orwavesolderingtechni

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFL9110TRPBF

P-Channel100-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

IRFL9110TRPBFA

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR9110

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR9110

PowerMOSFET(Vdss=-100V,Rds(on)=1.2ohm,Id=-3.1A)

DESCRIPTION ThirdGnerationMOSFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtec

IRF

International Rectifier

IRFR9110

3.1A,100V,1.200Ohm,P-ChannelPowerMOSFETs

TheseareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecificlevelofenergyintheavalanchebreakdownmodeofoperation.TheseareP-Channelenhancementmodesilicongatepowerfield-effecttransistorsdesignedforapplicationssuchasswitchingregulators,switching

Intersil

Intersil Corporation

IRFR9110

DynamicdV/dtRating

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR9110

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR9110

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR9110

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR9110

iscP-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFR9110

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Surface-mount(IRFR9110,SiHFR9110) ?Straightlead(IRFU9110,SiHFU9110) ?Availableintapeandreel ?P-channel ?Fastswitching ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR9110

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=-3.1A@TC=25℃ ·DrainSourceVoltage-VDSS=-100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.2Ω(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFR9110PBF

HEXFETPowerMOSFET

ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow.

IRF

International Rectifier

IRFR9110PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR9110PBF

DynamicdV/dtRating

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR9110PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR9110PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR9110PBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
23+
SOT223
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
IR
23+
SOT223
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
IR
23+
SOT223
7000
詢價
IR
24+
SOT-223
8700
新進(jìn)庫存/原裝
詢價
IR
23+
TO-220F
8238
詢價
IR
17+
SOT223
6200
100%原裝正品現(xiàn)貨
詢價
IR
22+
SOT223
5000
全新原裝現(xiàn)貨!自家?guī)齑?
詢價
IOR
24+
SOT223
2987
絕對全新原裝現(xiàn)貨供應(yīng)!
詢價
IR
23+
SOT223
8650
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!
詢價
IR
1822+
SOT223
9852
只做原裝正品假一賠十為客戶做到零風(fēng)險!!
詢價
更多IRFL9110R供應(yīng)商 更新時間2025-1-15 9:00:00