| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
IRFM | N-CHANNEL POWER MOSFET | SEME-LAB Seme LAB | SEME-LAB | |
POWER MOSFET THRU-HOLE (TO-254AA) HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-establishedadvantagesofMOSFETs,s | IRF International Rectifier | IRF | ||
Advanced Power MOSFET FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10μA(Max.)@VDS=100V ■LowerRDS(ON):0.289Ω(Typ.) | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
IEEE802.3af Compatible IEEE802.3afCompatible FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:10μA(Max.)@VDS=100V ?LowerRDS(ON):0.155Ω(Typ.) | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
Avalanche Rugged Technology FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:10μA(Max.)@VDS=100V ?LowerRDS(ON):0.155Ω(Typ.) | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
Avalanche Rugged Technology IEEE802.3afCompatible FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:10μA(Max.)@VDS=100V ?LowerRDS(ON):0.155Ω(Typ.) | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
Avalanche Rugged Technology IEEE802.3afCompatible FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:10μA(Max.)@VDS=100V ?LowerRDS(ON):0.155Ω(Typ.) | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
HEXFET TRANSISTOR 100Volt,0.077OhmHEXFET TheHEXFET?technologyisthekeytointernationalRectifiersadvancelineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance. FEATURES: ■RepetitiveAvalancheRating ■IsolatedandHer | IRF International Rectifier | IRF | ||
REPETITIVE AVALANCHE RATED AND dv/dt RATED REPETITIVEAVALANCHERATEDANDdv/dtRATEDHEXFETTRNANSISTOR 100Volt,0.07OhmHEXFET | IRF International Rectifier | IRF | ||
200V N-Channel MOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
Advanced Power MOSFET (200V, 1.5ohm, 0.77A) FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10μA(Max.)@VDS=200V ■LowRDS(ON):1.169Ω(Typ.) | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
200V N-Channel MOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
250V N-Channel MOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
Advanced Power MOSFET FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10μA(Max.)@VDS=200V ■LowRDS(ON):0.626Ω(Typ.) | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
200V N-Channel MOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
250V N-Channel MOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
POWER MOSFET THRU-HOLE (TO-254AA) 200V.N-CHANNEL Features: ■SimpleDriveRequirements ■EaseofParalleling ■HermeticallySealed ■ElectricallyIsolated ■Dynamicdv/dtRating ■Light-weight | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
POWER MOSFET THRU-HOLE 200V,N-CHANNELHEXFET?MOSFETTECHNOLOGY HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofth | IRF International Rectifier | IRF | ||
POWER MOSFET THRU-HOLE (TO-254AA) PartNumberRDS(on)ID IRFM2500.100?27.4A HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductan | IRF International Rectifier | IRF | ||
N–CHANNEL POWER MOSFET VDSS200V ID(cont)27.4A RDS(on)0.100? FEATURES ?N–CHANNELMOSFET ?HIGHVOLTAGE ?INTEGRALPROTECTIONDIODE ?HERMETICISOLATEDTO-254PACKAGE ?CERAMICSURFACEMOUNTPACKAGE OPTION | SEME-LAB Seme LAB | SEME-LAB |
詳細(xì)參數(shù)
- 型號：
IRFM
- 制造商：
SEME-LAB
- 制造商全稱：
Seme LAB
- 功能描述：
N-CHANNEL POWER MOSFET
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
RICOH |
16+ |
SOT-153 |
10000 |
進(jìn)口原裝現(xiàn)貨/價(jià)格優(yōu)勢! |
詢價(jià) | ||
RICOH |
17+ |
SOT-153 |
6200 |
100%原裝正品現(xiàn)貨 |
詢價(jià) | ||
23+ |
7300 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||||
23+ |
7300 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||||
IR |
22+ |
SOT223 |
2052 |
⊙⊙新加坡大量現(xiàn)貨庫存,深圳常備現(xiàn)貨!歡迎查詢!⊙ |
詢價(jià) | ||
FSC |
23+ |
SOT223 |
9526 |
詢價(jià) | |||
FAIRCHILD |
SOT-223 |
1000 |
原裝長期供貨! |
詢價(jià) | |||
IOR |
1430+ |
TO220 |
5800 |
全新原裝,公司大量現(xiàn)貨供應(yīng),絕對正品 |
詢價(jià) | ||
Fairchild |
23+ |
SOT-223 |
7750 |
全新原裝優(yōu)勢 |
詢價(jià) | ||
IR |
16+ |
NA |
8800 |
原裝現(xiàn)貨,貨真價(jià)優(yōu) |
詢價(jià) |
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