首頁 >IRFP240NPBF>規(guī)格書列表
零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevelspreclu | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
HEXFET?PowerMOSFET .VDSS=200V,RDS(on)=0.18Ohm,ID=20A Lead-Free | IRF International Rectifier | IRF | ||
DynamicdV/dtRatingRepetitiveAvalancheRated DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevelsprecludet | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=20A@TC=25℃ ·DrainSourceVoltage-:VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance:RDS(on)=0.18Ω(Max) ·FastSwitching | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
AdvancedPowerMOSFET(200V,0.18ohm,12.8A) FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10μA(Max.)@VDS=200V ■LowerRDS(ON):0.144Ω(Typ.) | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
200VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
N-CHANNELPOWERMOSFETFORHI-RELAPPLICATIONS | SEME-LAB Seme LAB | SEME-LAB |
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IR |
23+ |
TO-247 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
IR |
23+ |
TO-247 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
IR |
2022 |
TO-247 |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價 | ||
IR |
2022+ |
TO-247 |
22220 |
原廠代理 終端免費(fèi)提供樣品 |
詢價 | ||
HARRIS |
TO-247 |
60 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | |||
IR |
23+ |
NA/ |
25470 |
原裝現(xiàn)貨,當(dāng)天可交貨,原型號開票 |
詢價 | ||
IR |
23+ |
TO-247 |
6800 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價 | ||
IR |
23+ |
TO-247 |
7000 |
詢價 | |||
HARRIS |
23+ |
原裝正品現(xiàn)貨 |
10000 |
TO-247 |
詢價 | ||
IR |
24+ |
TO-247 |
6788 |
詢價 |
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