首頁 >IRFP460A,CN>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
SMPSMOSFET(VDSS=500V,RDS(on)max=0.27廓,ID=20A) | IRF International Rectifier | IRF | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET(Vdss=500V,Rds(on)max=0.27ohm,Id=20A) Description ThirdGenerationHEXFET?sfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevel | IRF International Rectifier | IRF | ||
DSeriesPowerMOSFET FEATURES ?OptimalDesign ??-LowAreaSpecificOn-Resistance ??-LowInputCapacitance(Ciss) ??-ReducedCapacitiveSwitchingLosses ??-HighBodyDiodeRuggedness ??-AvalancheEnergyRated(UIS) ?OptimalEfficiencyandOperation ??-LowCost ??-SimpleGateDriveCircuitry ?? | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
DSeriesPowerMOSFETs FEATURES ?OptimalDesign -LowAreaSpecificOn-Resistance -LowInputCapacitance(Ciss) -ReducedCapacitiveSwitchingLosses -HighBodyDiodeRuggedness -AvalancheEnergyRated(UIS) ?OptimalEfficiencyandOperation -LowCost -SimpleGateDriveCircuitry -LowFigure-of-Merit( | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
DSeriesPowerMOSFET FEATURES ?OptimalDesign ??-LowAreaSpecificOn-Resistance ??-LowInputCapacitance(Ciss) ??-ReducedCapacitiveSwitchingLosses ??-HighBodyDiodeRuggedness ??-AvalancheEnergyRated(UIS) ?OptimalEfficiencyandOperation ??-LowCost ??-SimpleGateDriveCircuitry ?? | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
DSeriesPowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
500VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
PowerMOSFET(Vdss=500V,Rds(on)=0.27ohm,Id=20A) Description ThisnewseriesofLowChargeHEXFETPowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedHexfettechnologythedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeedsandincreasedtotalsystemsavings.The | IRF International Rectifier | IRF | ||
PowerMOSFET DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedPowerMOSFETstechnologythedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeedsandincreasedtotalsystemsavings.The | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
iscN-ChannelMOSFETTransistor DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES ?DrainCurrent–ID=20A@TC=25℃ ?DrainSourceVoltage- :VDSS=500V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.27Ω(Max) ?FastSwitching | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
HEXFETPowerMOSFET Description ThisnewseriesofLowChargeHEXFETPowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedHexfettechnologythedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeedsandincreasedtotalsystemsavings.The | IRF International Rectifier | IRF | ||
PowerMOSFET DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedPowerMOSFETstechnologythedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeedsandincreasedtotalsystemsavings.The | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET(Vdss=500V,Rds(on)max=0.24ohm,Id=20A) SMPSMOSFET Benefits LowGateChargeQgresultsinSimpleDriveRequirement ImprovedGate,Avalancheanddynamicdv/dtRuggedness FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent EffectiveCossspecified(SeeAN1001) Applications SwitchModePowerSupply | IRF International Rectifier | IRF | ||
PowerMOSFET PowerMOSFET FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?EffectiveCossSpecified ?Lead(Pb)-freeAvailable APPLICATIONS | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay |
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
VISHAY/威世 |
2023+原裝正品現(xiàn)貨 |
TO-247 |
9800 |
AI智能識別、工業(yè)、汽車、醫(yī)療方案LPC批量及配套一站 |
詢價 | ||
VISHAY |
22+ |
TO-247 |
8900 |
英瑞芯只做原裝正品!!! |
詢價 | ||
VISHAY/威世 |
2023+ |
TO-247 |
6985 |
專注全新正品,優(yōu)勢現(xiàn)貨供應(yīng) |
詢價 | ||
VISHAY/威世 |
23+ |
TO-247 |
89630 |
當(dāng)天發(fā)貨全新原裝現(xiàn)貨 |
詢價 | ||
VISHAY/威世 |
23+ |
TO-247 |
16868 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
IR/VISHAY |
22+23+ |
TO-247 |
24946 |
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價 | ||
IR |
22+ |
6000 |
終端可免費(fèi)供樣,支持BOM配單 |
詢價 | |||
IR |
23+ |
8000 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價 | |||
IR |
23+ |
8000 |
只做原裝現(xiàn)貨 |
詢價 | |||
IR |
23+ |
7000 |
詢價 |
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