首頁(yè) >IRFR1205PBF>規(guī)格書列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IRFR1205PBF | HEXFET Power MOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor, | IRF International Rectifier | IRF | |
IRFR1205PBF | ULTRA LOW ON-RESISTANCE Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor, | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | |
IRFR1205PBF | ULTRA LOW ON RESISTANCE | IRF International Rectifier | IRF | |
ULTRA LOW ON RESISTANCE | IRF International Rectifier | IRF | ||
UltraLowOn-Resistance Features VDS(V)=55V ID=44A(VGS=10V) RDS(ON)27m(VGS=10V) | UMWUMW Rightway Semiconductor Co., Ltd. 友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司(簡(jiǎn)稱UMW?) | UMW | ||
MOSFET Features VDS(V)=55V ID=44A(VGS=10V) RDS(ON) | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊歐翊歐半導(dǎo)體 | EVVOSEMI | ||
UltraLowOn-Resistance Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor, | IRF International Rectifier | IRF | ||
N-Channel60-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
UltraLowOn-Resistance | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
N-Channel60-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
PowerMOSFET(Vdss=55V,Rds(on)=0.027ohm,Id=44A?? Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | IRF International Rectifier | IRF | ||
PowerMOSFET(Vdss=55V,Rds(on)=0.027ohm,Id=44A?? Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | IRF International Rectifier | IRF | ||
UltraLowOn-Resistance Description TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thestraightleadversion(IRFUseries)isforthroughholemountingapplications.Powerdissipationlevelsupto1.5wattsarepossibleintypicalsurfacemountapplications. ?Ultr | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor, | IRF International Rectifier | IRF | ||
N-Channel60V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
ULTRALOWON-RESISTANCE Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor, | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
300mAULTRALOWDROPOUTPOSITIVEADJUSTABLEANDFIXEDREGULATORS DESCRIPTION TheIRU1205deviceisanefficientlinearvoltageregulatorwithbetterthan1initialvoltageaccuracy,verylowdropoutvoltageandverylowgroundcurrentdesignedespeciallyforhandheld,batterypoweredapplications.Otherfeaturesofthedeviceare:TTLcompatibleenable/shutdo | IRF International Rectifier | IRF | ||
300mAULTRALOWDROPOUTPOSITIVEADJUSTABLEANDFIXEDREGULATORS DESCRIPTION TheIRU1205deviceisanefficientlinearvoltageregulatorwithbetterthan1initialvoltageaccuracy,verylowdropoutvoltageandverylowgroundcurrentdesignedespeciallyforhandheld,batterypoweredapplications.Otherfeaturesofthedeviceare:TTLcompatibleenable/shutdo | IRF International Rectifier | IRF | ||
300mAULTRALOWDROPOUTPOSITIVEADJUSTABLEANDFIXEDREGULATORS DESCRIPTION TheIRU1205deviceisanefficientlinearvoltageregulatorwithbetterthan1initialvoltageaccuracy,verylowdropoutvoltageandverylowgroundcurrentdesignedespeciallyforhandheld,batterypoweredapplications.Otherfeaturesofthedeviceare:TTLcompatibleenable/shutdo | IRF International Rectifier | IRF |
詳細(xì)參數(shù)
- 型號(hào):
IRFR1205PBF
- 功能描述:
MOSFET 55V 1 N-CH HEXFET 27mOhms 43.3nC
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
IR |
2024+ |
N/A |
70000 |
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng) |
詢價(jià) | ||
IR |
17+ |
TO-252 |
6200 |
詢價(jià) | |||
IR |
2016+ |
TO-252 |
6523 |
只做進(jìn)口原裝現(xiàn)貨!假一賠十! |
詢價(jià) | ||
IR |
23+ |
D2PAK |
7750 |
全新原裝優(yōu)勢(shì) |
詢價(jià) | ||
IR |
2020+ |
TO-252 |
6030 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可 |
詢價(jià) | ||
IR |
24+ |
DPAK |
5000 |
全現(xiàn)原裝公司現(xiàn)貨 |
詢價(jià) | ||
IR |
TO-252 |
7563 |
提供BOM表配單只做原裝貨值得信賴 |
詢價(jià) | |||
Infineon |
18+ |
NA |
3000 |
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)QQ3171516190 |
詢價(jià) | ||
IRF |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價(jià) | ||
IR |
19+ |
TO-252 |
74954 |
原廠代理渠道,每一顆芯片都可追溯原廠; |
詢價(jià) |
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