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IRFU014PBF

HEXFETPowerMOSFET

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD-Pakisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechni

IRF

International Rectifier

IRFU014PBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFU014PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFU014PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU014PBF

N-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

IRFU014PBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRLD014

POWERMOSFEET

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4-pinDIPpackageisalowcostmachine-insertiablecasestylewhichcanbestackedinmulti

IRF

International Rectifier

IRLD014

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertiablecasestylewhichcanbestackedinmultiplecombina

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRLD014

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRLD014PBF

HEXFETPowerMOSFET

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4-pinDIPpackageisalowcostmachine-insertiablecasestylewhichcanbestackedinmulti

IRF

International Rectifier

IRLD014PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertiablecasestylewhichcanbestackedinmultiplecombina

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRLD014PBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRLL014

HEXFET?PowerMOSFET

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountusingvaporphase,infrared,orwavesolderin

IRF

International Rectifier

IRLL014

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountingusingvaporphase,infrared,orwavesolderingtechniq

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRLL014

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRLL014

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRLL014

PowerMOSFET

FEATURES ?Surface-mount ?Availableintapeandreel ?DynamicdV/dtrating ?Logic-levelgatedrive ?RDS(on)specifiedatVGS=4Vand5V ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRLL014

PowerMOSFET

FEATURES ?Surface-mount ?Availableintapeandreel ?DynamicdV/dtrating ?Logic-levelgatedrive ?RDS(on)specifiedatVGS=4Vand5V ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRLL014

55VN-ChannelMOSFET

Benefits VDS(V)=55V ID=2.0A(VGS=10V) RDS(ON)

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

IRLL014N

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

供應(yīng)商型號品牌批號封裝庫存備注價格
SAMSUNG
05+
原廠原裝
3671
只做全新原裝真實現(xiàn)貨供應(yīng)
詢價
IR
22+
6000
終端可免費供樣,支持BOM配單
詢價
IR
23+
8000
只做原裝現(xiàn)貨
詢價
IR
23+
7000
詢價
IR/VISHAY
22+
SOT-251
20000
保證原裝正品,假一陪十
詢價
IR
23+
TO-251
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
IOR
24+
TO-251
2987
絕對全新原裝現(xiàn)貨供應(yīng)!
詢價
VIS
23+
IPAK
20000
原裝正品,假一罰十
詢價
VISHAY
23+
TO262
7750
全新原裝優(yōu)勢
詢價
ir
24+
N/A
6980
原裝現(xiàn)貨,可開13%稅票
詢價
更多IRFU014ATU供應(yīng)商 更新時間2025-1-19 9:16:00