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IRLD014	文件：172.88 Kbytes Page：6 Pages	POWERMOSFEET Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4-pinDIPpackageisalowcostmachine-insertiablecasestylewhichcanbestackedinmulti	IRF International Rectifier	IRF
IRLD014	文件：1.72964 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertiablecasestylewhichcanbestackedinmultiplecombina	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRLD014	文件：845.54 Kbytes Page：8 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRLD014PBF	文件：1.76807 Mbytes Page：8 Pages	HEXFETPowerMOSFET Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4-pinDIPpackageisalowcostmachine-insertiablecasestylewhichcanbestackedinmulti	IRF International Rectifier	IRF
IRLD014PBF	文件：1.72964 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertiablecasestylewhichcanbestackedinmultiplecombina	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRLD014PBF	文件：845.54 Kbytes Page：8 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRLL014	文件：209.85 Kbytes Page：8 Pages	HEXFET?PowerMOSFET Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountusingvaporphase,infrared,orwavesolderin	IRF International Rectifier	IRF
IRLL014	文件：959.24 Kbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountingusingvaporphase,infrared,orwavesolderingtechniq	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRLL014	文件：174.34 Kbytes Page：9 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRLL014	文件：174.34 Kbytes Page：9 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRLL014	文件：170.07 Kbytes Page：8 Pages	PowerMOSFET FEATURES ?Surface-mount ?Availableintapeandreel ?DynamicdV/dtrating ?Logic-levelgatedrive ?RDS(on)specifiedatVGS=4Vand5V ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRLL014	文件：358.68 Kbytes Page：8 Pages	PowerMOSFET FEATURES ?Surface-mount ?Availableintapeandreel ?DynamicdV/dtrating ?Logic-levelgatedrive ?RDS(on)specifiedatVGS=4Vand5V ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRLL014	文件：1.03976 Mbytes Page：8 Pages	55VN-ChannelMOSFET Benefits VDS(V)=55V ID=2.0A(VGS=10V) RDS(ON)	EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊歐翊歐半導(dǎo)體	EVVOSEMI
IRLL014N	文件：158.5 Kbytes Page：9 Pages	HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide	IRF International Rectifier	IRF
IRLL014N	文件：165.67 Kbytes Page：9 Pages	AdvancedProcessTechnology Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide	IRF International Rectifier	IRF
IRLL014N	文件：1.03976 Mbytes Page：8 Pages	55VN-ChannelMOSFET Benefits VDS(V)=55V ID=2.0A(VGS=10V) RDS(ON)	EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊歐翊歐半導(dǎo)體	EVVOSEMI
IRLL014NPBF	文件：261.26 Kbytes Page：9 Pages	HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide	IRF International Rectifier	IRF
IRLL014NPBF	文件：262.4 Kbytes Page：9 Pages	ADVANCEDPROCESSTECHNOLOGY	IRF International Rectifier	IRF
IRLL014NTR	文件：165.67 Kbytes Page：9 Pages	AdvancedProcessTechnology Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide	IRF International Rectifier	IRF
IRLL014NTRPBF	文件：1.80269 Mbytes Page：8 Pages	N-Channel60-V(D-S)MOSFET	VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司	VBSEMI

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供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市坤融電子科技有限公司	IRFW014	FAIRCHILD/仙童	24+	SOT-223	20000	只做原廠(chǎng)渠道可追溯貨源	詢(xún)價(jià)
深圳市昌和盛利電子有限公司	IRFW014	FSC	23+	SOT223	9526		詢(xún)價(jià)
深圳市澳億芯電子科技有限公司	IRFW014	仙童	08+	SOT-223	20000	普通	詢(xún)價(jià)
京海半導(dǎo)體(深圳)有限公司	IRFW014	VB	21+	SOT-223	10000	原裝現(xiàn)貨假一罰十	詢(xún)價(jià)
深圳市河鋒鑫科技有限公司	IRFW014	FAIRCHILD/仙童	2022+	SOT-223	20000	原廠(chǎng)代理終端免費(fèi)提供樣品	詢(xún)價(jià)
深圳市科恒偉業(yè)電子有限公司	IRFW014	FAIRCHILD/仙童	21+	SOT-223	9852	只做原裝正品現(xiàn)貨!或訂貨假一賠十!	詢(xún)價(jià)
深圳市創(chuàng)新跡電子有限公司	IRFW014	FAIRCHILD/仙童	2022+	SOT-223	30000	進(jìn)口原裝現(xiàn)貨供應(yīng),原裝假一罰十	詢(xún)價(jià)
深圳市安富世紀(jì)電子有限公司	IRFW014	VB	23+	SOT-223	8000	只做原裝現(xiàn)貨	詢(xún)價(jià)
天津市博通航睿技術(shù)有限公司	IRFW014	VB	23+	SOT-223	7000		詢(xún)價(jià)
IRFW1090ATU	SEC	23+24	TO-263	59630	主營(yíng)原裝MOS,二三級(jí)管,肖特基,功率場(chǎng)效應(yīng)管	詢(xún)價(jià)

更多IRFW014供應(yīng)商更新時(shí)間2025-1-13 13:39:00

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