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IRG4BC30FPBF

FastSpeedIGBTINSULATEDGATEBIPOLARTRANSISTOR

Features ?Fast:optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IndustrystandardTO-220ABpackage ?Lead-Free Benefits ?Generatio

IRF

International Rectifier

IRG4BC30FPBF

INSULATEDGATEBIPOLARTRANSISTOR

IRF

International Rectifier

IRG4BC30F-STRLP

INSULATEDGATEBIPOLARTRANSISTOR

IRF

International Rectifier

IRG4BC30K

FitRate/EquivalentDeviceHours

IRF

International Rectifier

IRG4BC30K

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.21V,@Vge=15V,Ic=16A)

Features ?Highshortcircuitratingoptimizedformotorcontrol, tsc=10μs,@360VVCE(start),TJ=125°C, VGE=15V ?Combineslowconductionlosseswithhigh switchingspeed ?Latestgenerationdesignprovidestighterparameter distributionandhigherefficiencythanprevious

IRF

International Rectifier

IRG4BC30KD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=2.21V,@Vge=15V,Ic=16A)

ShortCircuitRatedUltraFastIGBT Features ?Highshortcircuitratingoptimizedformotorcontrol,tsc=10μs,@360VVCE(start),TJ=125°C,VGE=15V ?Combineslowconductionlosseswithhighswitchingspeed ?tighterparameterdistributionandhigherefficiencythanpreviousgenerations

IRF

International Rectifier

IRG4BC30KDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRF

International Rectifier

IRG4BC30KDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODEShortCircuitRatedUltraFast1GBT

Features ?Highshortcircuitratingoptimizedformotorcontrol, tsc=10μs,@360VVCE(start),TJ=125°C, VGE=15V ?Combineslowconductionlosseswithhigh switchingspeed ?tighterparameterdistributionandhigherefficiencythan previousgenerations ?IGBTco-packag

IRF

International Rectifier

IRG4BC30KDS

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=2.21V,@Vge=15V,Ic=16A)

Features ?Highshortcircuitratingoptimizedformotorcontrol,tsc=10μs,@360VVCE(start),TJ=125°C,VGE=15V ?Combineslowconductionlosseswithhighswitchingspeed ?tighterparameterdistributionandhigherefficiencythanpreviousgenerations ?IGBTco-packagedwithHEXFREDTMul

IRF

International Rectifier

IRG4BC30KD-S

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=2.21V,@Vge=15V,Ic=16A)

Features ?Highshortcircuitratingoptimizedformotorcontrol,tsc=10μs,@360VVCE(start),TJ=125°C,VGE=15V ?Combineslowconductionlosseswithhighswitchingspeed ?tighterparameterdistributionandhigherefficiencythanpreviousgenerations ?IGBTco-packagedwithHEXFREDTMul

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號(hào)：

    IRG4BC30FD-STRL

  • 制造商：

    International Rectifier

  • 功能描述：

    600V HYPERFAST 1-8 KHZ CO-PACK IGBT IN A D2-PAK PACKAGE - Tape and Reel

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
22+
263
6000
終端可免費(fèi)供樣,支持BOM配單
 詢(xún)價(jià)
IR
23+
263
8000
只做原裝現(xiàn)貨
 詢(xún)價(jià)
IR
23+
263
7000
詢(xún)價(jià)
IR
22+23+
TO-263
28699
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
 詢(xún)價(jià)
IR
21+
TO-263
10000
原裝現(xiàn)貨假一罰十
 詢(xún)價(jià)
IR
23+24
TO-263
29840
主營(yíng)MOS管,二極.三極管,肖特基二極管.功率三極管
 詢(xún)價(jià)
Infineon Technologies
21+
D2PAK
13880
公司只售原裝,支持實(shí)單
 詢(xún)價(jià)
Infineon Technologies
23+
D2PAK
9000
原裝正品，支持實(shí)單
 詢(xún)價(jià)
IR
05+
原廠原裝
50051
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
 詢(xún)價(jià)
IR
1816+
TO-263
6523
科恒偉業(yè)!只做原裝正品,假一賠十!
 詢(xún)價(jià)
更多IRG4BC30FD-STRL供應(yīng)商 更新時(shí)間2025-3-2 14:00:00

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