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IRG4BC30KD-S

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)

Features ?Highshortcircuitratingoptimizedformotorcontrol,tsc=10μs,@360VVCE(start),TJ=125°C,VGE=15V ?Combineslowconductionlosseswithhighswitchingspeed ?tighterparameterdistributionandhigherefficiencythanpreviousgenerations ?IGBTco-packagedwithHEXFREDTMul

IRF

International Rectifier

IRG4BC30KD-SPBF

INSUKATED GATEBIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features ?Highshortcircuitratingoptimizedformotorcontrol,tsc=10μs,@360VVCE(start),TJ=125°C,VGE=15V ?Combineslowconductionlosseswithhighswitchingspeed ?tighterparameterdistributionandhigherefficiencythanpreviousgenerations ?IGBTco-packagedwithHEXFREDTMul

IRF

International Rectifier

IRG4BC30KD-STRR

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)

Features ?Highshortcircuitratingoptimizedformotorcontrol,tsc=10μs,@360VVCE(start),TJ=125°C,VGE=15V ?Combineslowconductionlosseswithhighswitchingspeed ?tighterparameterdistributionandhigherefficiencythanpreviousgenerations ?IGBTco-packagedwithHEXFREDTMul

IRF

International Rectifier

IRG4BC30KD-SPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFR RECOVERY DIODE

IRF

International Rectifier

IRG4BC30KD-SPBF_15

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFR RECOVERY DIODE

IRF

International Rectifier

IRG4BC30KPBF

INSULATEDGATEBIPOLARTRANSISTOR

ShortCircuitRatedUltraFastIGBT

IRF

International Rectifier

IRG4BC30KPBF

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.21V,@Vge=15V,Ic=16A)

IRF

International Rectifier

IRG4BC30KS

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.21V,@Vge=15V,Ic=16A)

Features ?Highshortcircuitratingoptimizedformotorcontrol, tsc=10μs,@360VVCE(start),TJ=125°C, VGE=15V ?Combineslowconductionlosseswithhigh switchingspeed ?Latestgenerationdesignprovidestighterparameter distributionandhigherefficiencythanprevious

IRF

International Rectifier

IRG4BC30K-S

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.21V,@Vge=15V,Ic=16A)

Features ?Highshortcircuitratingoptimizedformotorcontrol, tsc=10μs,@360VVCE(start),TJ=125°C, VGE=15V ?Combineslowconductionlosseswithhigh switchingspeed ?Latestgenerationdesignprovidestighterparameter distributionandhigherefficiencythanprevious

IRF

International Rectifier

IRG4BC30K-S

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.21V,@Vge=15V,Ic=16A)

IRF

International Rectifier

詳細參數(shù)

  • 型號：

    IRG4BC30KD-S

  • 制造商：

    International Rectifier

  • 功能描述：

    IGBT D2-PAK

供應商型號品牌批號封裝庫存備注價格
IR
22+
TO-263
9800
只做原裝正品假一賠十!正規(guī)渠道訂貨!
 詢價
IR
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
 詢價
IR
2015+
D2-Pak
12500
全新原裝,現(xiàn)貨庫存長期供應
 詢價
IR
23+
TO-263
35890
詢價
IR
23+
D2-Pak
8600
全新原裝現(xiàn)貨
 詢價
IR
24+
原廠封裝
976
原裝現(xiàn)貨假一罰十
 詢價
IR
24+
D2-Pak
8866
詢價
IRF
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
IR
24+
TO-220AB
16800
絕對原裝進口現(xiàn)貨,假一賠十,價格優(yōu)勢!?
 詢價
IR
22+
TO-263
20000
保證原裝正品,假一陪十
 詢價
更多IRG4BC30KD-S供應商 更新時間2025-3-1 17:27:00

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