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IRG4PH30

INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A)

Features ?Highshortcircuitratingoptimizedformotorcontrol, tsc=10μs,VCC=720V,TJ=125°C, VGE=15V ?Combineslowconductionlosseswithhigh switchingspeed ?Latestgenerationdesignprovidestighterparameter distributionandhigherefficiencythanprevious g

IRF

International Rectifier

IRG4PH30

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A)

Features ?Highshortcircuitratingoptimizedformotorcontrol, tsc=10μs,VCC=720V,TJ=125°C, VGE=15V ?Combineslowconductionlosseswithhigh switchingspeed ?Tighterparameterdistributionandhigherefficiency thanpreviousgenerations ?IGBTco-packagedwithHE

IRF

International Rectifier

IRG4PH30K

INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A)

Features ?Highshortcircuitratingoptimizedformotorcontrol, tsc=10μs,VCC=720V,TJ=125°C, VGE=15V ?Combineslowconductionlosseswithhigh switchingspeed ?Latestgenerationdesignprovidestighterparameter distributionandhigherefficiencythanprevious g

IRF

International Rectifier

IRG4PH30KD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A)

Features ?Highshortcircuitratingoptimizedformotorcontrol, tsc=10μs,VCC=720V,TJ=125°C, VGE=15V ?Combineslowconductionlosseswithhigh switchingspeed ?Tighterparameterdistributionandhigherefficiency thanpreviousgenerations ?IGBTco-packagedwithHE

IRF

International Rectifier

IRG4PH30KDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features ?Highshortcircuitratingoptimizedformotorcontrol, tsc=10μs,VCC=720V,TJ=125°C, VGE=15V ?Combineslowconductionlosseswithhigh switchingspeed ?Tighterparameterdistributionandhigherefficiency thanpreviousgenerations ?IGBTco-packagedwithHE

IRF

International Rectifier

IRG4PH30KPBF

INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Ultrafast IGBT

Features ?Highshortcircuitratingoptimizedformotorcontrol, tsc=10μs,VCC=720V,TJ=125°C, VGE=15V ?Combineslowconductionlosseswithhigh switchingspeed ?Latestgenerationdesignprovidestighterparameter distributionandhigherefficiencythanprevious g

IRF

International Rectifier

IRG4PH30KDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

IRF

International Rectifier

IRG4PH30KDPBF_15

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

IRF

International Rectifier

IRG4PH30KPBF

INSULATED GATE BIPOLAR TRANSISTOR

IRF

International Rectifier

IRG4PH30KPBF_15

INSULATED GATE BIPOLAR TRANSISTOR

IRF

International Rectifier

詳細參數(shù)

  • 型號：

    IRG4PH30

  • 制造商：

    IRF

  • 制造商全稱：

    International Rectifier

  • 功能描述：

    INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A)

供應商型號品牌批號封裝庫存備注價格
IRF
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
IR
22+
TO
6000
終端可免費供樣,支持BOM配單
 詢價
IR
23+
TO
8000
只做原裝現(xiàn)貨
 詢價
IR
23+
TO
7000
詢價
IR
24+
TO-247AC
8866
詢價
DISCRETE
25
IR
3500
詢價
IR
23+
TO-3P
9896
詢價
IR
2015+
TO-247AC
12500
全新原裝,現(xiàn)貨庫存長期供應
 詢價
IR
2015+
TO-247
19889
一級代理原裝現(xiàn)貨,特價熱賣!
 詢價
IR
16+
TO-3P
10000
全新原裝現(xiàn)貨
 詢價
更多IRG4PH30供應商 更新時間2025-2-24 9:04:00

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