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IRL3803STRRPBF

Advanced Process Technology

Description FifthGenerationHEXFETsfrominternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswichingspeedandurggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provides

IRF

International Rectifier

IRL3803V

HEXFETPowerMOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRL3803V

N-ChannelMOSFETTransistor

?DESCRIPTION ?Combinewiththefastswitchingspeedandruggedizeddevice design,providethedesignerwithanextremelyefficientand reliabledeviceforuseinawidevarietyofapplications. ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤5.5m? ?Enhancementmode ?Fa

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRL3803VL

HEXFETPowerMOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRL3803VLPBF

HEXFETPowerMOSFET

IRF

International Rectifier

IRL3803VPBF

HEXFETPowerMOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRL3803VPBF

ADVANCEDPROCESSTECHNOLOGY

IRF

International Rectifier

IRL3803VS

HEXFETPowerMOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRL3803VS

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRL3803VSPBF

HEXFETPowerMOSFET

IRF

International Rectifier

詳細參數(shù)

  • 型號：

    IRL3803STRR

  • 功能描述：

    MOSFET 30V 1 N-CH HEXFET 6mOhms 93.3nC

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
IR
23+
TO263
8600
受權代理!全新原裝現(xiàn)貨特價熱賣!
 詢價
IR
16+
D2PAK
6111
全新原裝/深圳現(xiàn)貨庫2
 詢價
INFINEON/英飛凌
2021+
D2PAK
18401
原裝進口假一罰十
 詢價
IR
20+原裝正品
TO263
6000
大量現(xiàn)貨,免費發(fā)樣。
 詢價
IR
2020+
TO-263
8000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
INFINEON/英飛凌
18+
TO-263
300
進口原裝假一賠十支持含稅
 詢價
IR
21+
6000
原裝正品
 詢價
IR
24+
TO-263
1600
只做原廠渠道 可追溯貨源
 詢價
IR
1603+
TO263
2
原裝庫存有訂單來談優(yōu)勢
 詢價
IR
2021+
TO263
6800
原廠原裝,歡迎咨詢
 詢價
更多IRL3803STRR供應商 更新時間2025-1-26 11:06:00

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