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IXFH50N30Q3

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=50A@TC=25℃ ·DrainSourceVoltage- :VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=80mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH50N30Q3

HiperFETTM Power MOSFETs Q3-Class

IXYS

IXYS Corporation

50N30

N-ChannelPowerMOSFET

NELLSEMINell Semiconductor Co., Ltd

尼爾半導(dǎo)體尼爾半導(dǎo)體股份有限公司

DAME50N30D

N-ChannelEnhancementModeMOSFET

DACO

DACO SEMICONDUCTOR CO.,LTD.

FGPF50N30T

300V,50APDPIGBT

GeneralDescription UsingNovelTrenchIGBTTechnology,Fairchild’snewsesriesoftrenchIGBTsoffertheoptimumperformanceforPDPapplicationswherelowconductionandswitchinglossesareessential. Features ?Highcurrentcapability ?Lowsaturationvoltage:VCE(sat)=1.4V@IC

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGPF50N30TTU

300V,50APDPIGBT

GeneralDescription UsingNovelTrenchIGBTTechnology,Fairchild’snewsesriesoftrenchIGBTsoffertheoptimumperformanceforPDPapplicationswherelowconductionandswitchinglossesareessential. Features ?Highcurrentcapability ?Lowsaturationvoltage:VCE(sat)=1.4V@IC

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IXTH50N30

AdvanceTechnicalInformationHighCurrentPowerMOSFET

HighCurrentPowerMOSFET N-ChannelEnhancementMode Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect Advantages ?Eas

IXYS

IXYS Corporation

IXTH50N30

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTT50N30

AdvanceTechnicalInformationHighCurrentPowerMOSFET

HighCurrentPowerMOSFET N-ChannelEnhancementMode Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect Advantages ?Eas

IXYS

IXYS Corporation

PJM50N30DJ

SingleN??hannelPowerMOSFET

PJSEMIDongguan Pingjingsemi Technology Co., Ltd,

平晶半導(dǎo)體東莞市平晶半導(dǎo)體科技有限公司

詳細參數(shù)

  • 型號：

    IXFH50N30Q

  • 功能描述：

    MOSFET Q3Class HiPerFET Pwr MOSFET 300V/50A

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IXYS
24+
TO-247AD(IXFH)
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢價
IXYS/艾賽斯
23+
TO-247
59580
原裝正品 華強現(xiàn)貨
 詢價
IXYS
18+
NA
3000
進口原裝正品優(yōu)勢供應(yīng)
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IXYS
1931+
N/A
142
加我qq或微信，了解更多詳細信息,體驗一站式購物
 詢價
IXYS
1809+
TO-247
326
就找我吧!--邀您體驗愉快問購元件!
 詢價
IXYS/艾賽斯
23+
TO-247
10000
公司只做原裝正品
 詢價
IXYS
22+
NA
142
加我QQ或微信咨詢更多詳細信息,
 詢價
IXYS
22+
TO2473
9000
原廠渠道,現(xiàn)貨配單
 詢價
IXYS/艾賽斯
23+
TO-247
6000
原裝正品，支持實單
 詢價
ixys
2023+
TO-247
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
 詢價
更多IXFH50N30Q供應(yīng)商 更新時間2025-1-28 14:14:00

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