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IXFQ26N60

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=26A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=270mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFQ26N60P

N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated

PolarHV?PowerMOSFET N-ChannelEnhancementModeFastRecoveryDiodeAvalancheRated Features ?FastRecoverydiode ?UnclampedInductiveSwitching(UIS)rated ?Internationalstandardpackages ?Lowpackageinductance-easytodriveandtoprotect Advantages ?Easytomount ?Spacesavi

IXYS

IXYS Corporation

IXFR26N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=23A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=250mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFR26N60Q

HiPerFETTMPowerMOSFETsISOPLUS247Q-CLASS

HiPerFET?PowerMOSFETsISOPLUS247?Q-CLASS (ElectricallyIsolatedBackSurface) N-ChannelEnhancementMode AvalanceRated,HighdV/dt LowGateChargeandCapacitances Features ?SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2

IXYS

IXYS Corporation

IXFT26N60

HiPerFETPowerMOSFETs

HiPerFET?PowerMOSFETs N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features ?Internationalstandardpackages ?EpoxymeetUL94V-0,flammabilityclassification ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Avalancheenergyandcurrentrated ?

IXYS

IXYS Corporation

IXFT26N60P

N-ChannelEnhancementModeFastRecoveryDiodeAvalancheRated

PolarHV?PowerMOSFET N-ChannelEnhancementModeFastRecoveryDiodeAvalancheRated Features ?FastRecoverydiode ?UnclampedInductiveSwitching(UIS)rated ?Internationalstandardpackages ?Lowpackageinductance-easytodriveandtoprotect Advantages ?Easytomount ?Spacesavi

IXYS

IXYS Corporation

IXFT26N60Q

HiPerFETTMPowerMOSFETsQ-Class

N-ChannelEnhancementMode AvalancheRated,Highdv/dt,LowQg Features ●Lowgatecharge ●Internationalstandardpackages ●EpoxymeetUL94V-0,flammabilityclassification ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●Avalancheenergyandcurrentrated ●Fa

IXYS

IXYS Corporation

IXFV26N60P

N-ChannelEnhancementModeFastRecoveryDiodeAvalancheRated

PolarHV?PowerMOSFET N-ChannelEnhancementModeFastRecoveryDiodeAvalancheRated Features ?FastRecoverydiode ?UnclampedInductiveSwitching(UIS)rated ?Internationalstandardpackages ?Lowpackageinductance-easytodriveandtoprotect Advantages ?Easytomount ?Spacesavi

IXYS

IXYS Corporation

IXFV26N60PS

N-ChannelEnhancementModeFastRecoveryDiodeAvalancheRated

PolarHV?PowerMOSFET N-ChannelEnhancementModeFastRecoveryDiodeAvalancheRated Features ?FastRecoverydiode ?UnclampedInductiveSwitching(UIS)rated ?Internationalstandardpackages ?Lowpackageinductance-easytodriveandtoprotect Advantages ?Easytomount ?Spacesavi

IXYS

IXYS Corporation

IXFX26N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=26A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.25Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

詳細參數(shù)

  • 型號：

    IXFQ26N60

  • 制造商：

    IXYS

  • 制造商全稱：

    IXYS Corporation

  • 功能描述：

    N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated

供應商型號品牌批號封裝庫存備注價格
IXYS
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
IXYS
24+
TO-247
2100
公司大量全新現(xiàn)貨 隨時可以發(fā)貨
 詢價
華奧DHA
23+
TO3P
400000
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
IXYS
24+
NA
3000
進口原裝正品優(yōu)勢供應
 詢價
IXYS
1931+
N/A
60
加我qq或微信，了解更多詳細信息,體驗一站式購物
 詢價
IXYS
1809+
TO-3P
1675
就找我吧!--邀您體驗愉快問購元件!
 詢價
IXYS
22+
NA
60
加我QQ或微信咨詢更多詳細信息,
 詢價
IXYS
22+
TO3P3 SC653
9000
原廠渠道,現(xiàn)貨配單
 詢價
IXYS
21+
TO3P3 SC653
13880
公司只售原裝,支持實單
 詢價
IXYS
25+
TO-3P
270
原廠原裝,價格優(yōu)勢!13246658303
 詢價
更多IXFQ26N60供應商 更新時間2025-3-8 9:02:00

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