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NESG2031M05

NPN SiGe RF Transistor for Low Noise, High-Gain Amplification

FEATURES ?Thedeviceisanidealchoiceforlownoise,high-gainatlowcurrentamplifications. ?NF=0.8dBTYP.,Ga=17.0dBTYP.@VCE=2V,IC=5mA,f=2GHz ?NF=1.3dBTYP.,Ga=10.0dBTYP.@VCE=2V,IC=5mA,f=5.2GHz ?Maximumstablepowergain:MSG=21.5dBTY

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NESG2031M05

NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR

DESCRIPTION NECsNESG2031M05isfabricatedusingNECshighvoltageSiliconGermaniumprocess(UHS2-HV),andisdesignedforawiderangeofapplicationsincludinglownoiseamplifiers,mediumpoweramplifiers,andoscillators. NECslowprofile,flatleadstyleM05Packageprovideshighfrequency

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NESG2031M05

NPN SiGe HIGH FREQUENCY TRANSISTOR

CEL

California Eastern Labs

NESG2031M05-A

NPN SiGe RF Transistor for Low Noise, High-Gain Amplification

FEATURES ?Thedeviceisanidealchoiceforlownoise,high-gainatlowcurrentamplifications. ?NF=0.8dBTYP.,Ga=17.0dBTYP.@VCE=2V,IC=5mA,f=2GHz ?NF=1.3dBTYP.,Ga=10.0dBTYP.@VCE=2V,IC=5mA,f=5.2GHz ?Maximumstablepowergain:MSG=21.5dBTY

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NESG2031M05-T1

NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR

DESCRIPTION NECsNESG2031M05isfabricatedusingNECshighvoltageSiliconGermaniumprocess(UHS2-HV),andisdesignedforawiderangeofapplicationsincludinglownoiseamplifiers,mediumpoweramplifiers,andoscillators. NECslowprofile,flatleadstyleM05Packageprovideshighfrequency

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NESG2031M05-T1

NPN SiGe RF Transistor for Low Noise, High-Gain Amplification

FEATURES ?Thedeviceisanidealchoiceforlownoise,high-gainatlowcurrentamplifications. ?NF=0.8dBTYP.,Ga=17.0dBTYP.@VCE=2V,IC=5mA,f=2GHz ?NF=1.3dBTYP.,Ga=10.0dBTYP.@VCE=2V,IC=5mA,f=5.2GHz ?Maximumstablepowergain:MSG=21.5dBTY

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NESG2031M05-T1-A

NPN SiGe RF Transistor for Low Noise, High-Gain Amplification

FEATURES ?Thedeviceisanidealchoiceforlownoise,high-gainatlowcurrentamplifications. ?NF=0.8dBTYP.,Ga=17.0dBTYP.@VCE=2V,IC=5mA,f=2GHz ?NF=1.3dBTYP.,Ga=10.0dBTYP.@VCE=2V,IC=5mA,f=5.2GHz ?Maximumstablepowergain:MSG=21.5dBTY

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NESG2031M05-T1

NPN SiGe HIGH FREQUENCY TRANSISTOR

CEL

California Eastern Labs

NESG2031M05-T1-A

NPN SiGe HIGH FREQUENCY TRANSISTOR

CEL

California Eastern Labs

詳細參數(shù)

  • 型號：

    NESG2031M05

  • 功能描述：

    射頻硅鍺晶體管 NPN SiGe High Freq

  • RoHS：

    否

  • 制造商：

    Infineon Technologies 發(fā)射極 - 基極電壓

  • 封裝：

    Reel

供應(yīng)商型號品牌批號封裝庫存備注價格
NEC
17+
SOT-343
6200
100%原裝正品現(xiàn)貨
 詢價
NEC
23+
SOT343
9960
價格優(yōu)勢/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢
 詢價
NEC
16+
SOT-343
10000
進口原裝現(xiàn)貨/價格優(yōu)勢!
 詢價
NEC
24+
SOT-343
5000
全現(xiàn)原裝公司現(xiàn)貨
 詢價
CEL
23+
原廠原包
19960
只做進口原裝 終端工廠免費送樣
 詢價
NEC
1923+
SOT-343
35689
絕對進口原裝現(xiàn)貨庫存特價銷售
 詢價
NEC
21+
SOT-343
10000
原裝現(xiàn)貨假一罰十
 詢價
RENESAS/瑞薩
23+
SOT-343
27000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
NEC
22+
SOT343
3000
原裝正品,支持實單
 詢價
NEC
21+
NA
500
進口原裝現(xiàn)貨假一賠萬力挺實單
 詢價
更多NESG2031M05供應(yīng)商 更新時間2025-1-4 8:30:00

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